This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1819A
Silicon NPN epitaxial planar type
For general amplification
Unit: mm
+0.10
–0.05
+0.1
–0.0
0.15
0.3
Complementary to 2SB1218A
3
■ Features
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape pacing and the magazine
pacing.
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.2
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
1: Base
2: Emitter
3: Collector
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
60
50
V
EIAJ: SC-70
SMini3-G1 Package
7
100
V
mA
mA
mW
°C
Marking Symbol: Z
Peak collector current
ICP
200
Collector power dissipation
Junction temperature
PC
150
Tj
150
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
V
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
VCE = 2 V, IC = 100 mA
0.1
100
460
µA
µA
ICEO
*
hFE1
160
90
hFE2
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
150
3.5
0.3
V
MHz
pF
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
210 to 340
ZR
S
290 to 460
ZS
No rank
160 to 460
Z
hFE1
160 to 260
ZQ
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: April 2003
SJC00226BED
1
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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