| This product complies with the RoHS Directive (EU 2002/95/EC).   Transistors   Silicon NPN epitaxial planar type   For high frequency amplification, oscillation and mixing    Features   Unit: mm   High transition frequency fT   3 2 1 Small collector output capacitance (Common base, input open circuited) Cob   and reverse transfer capacitance (Common base) Crb   Optimum for high-density mounting and downsizing of the equipment for   Ultraminiature leadless package   +0.01   0.39   1.00±0.05   −0.03   0.6 mm 1.0 mm (height 0.39 mm)   0.25±0.05   0.25±0.051    Absolute Maximum Ratings T= 25C   Parameter   Collector-base voltage (Emitter open)   Collector-emitter voltage (Base open)   Emitter-base voltage (Collector open)   Collector current   Symbol   VCBO   VCEO   VEBO   IC   Rating   Unit   V 2 3 0.65±0.01   0.05±0.03   15   10   V 1: Base   3 50   V 2: Emitter   3: Collector   ML3-N2 Package   mA   mW   C   C   Collector power dissipation   Junction temperature   PC   100   Marking Symbol: 6N   Tj   125   Storage temperature   T stg   55 to +125    Electrical Characteristics T= 25C3C   Parameter   Symbol   Conditions   Min   10   3 Typ   Max   Unit   V Collector-emitter voltage (Base open)   Emitter-base voltage (Collector open)   Collector-base cutoff current (Emitter open)   Forward current transfer ratio   VCEO IC = 2 mA, IB = 0   VEBO I= 10 µA, IC = 0   V ICBO   hFE   VCB = 10 V, I= 0   1 µA   VCE = 4 V, IC = 5 mA   75   400   0.5   2.7   Collector-emitter saturation voltage   Transition frequency   VCE(sat) IC = 20 mA, IB = 4 mA   V fT   VCB = 4 V, I5 mA, f = 200 MHz   1.4   1.9   GHz   Collector output capacitance   Cob   Crb   VCB = 4 V, IE = 0, f = 1 MHz   1.4   pF   (Common base, input open circuited)   Reverse transfer capacitance (Common base)   Collector-base parameter   VCB = 4 V, IE = 0, f = 1 MHz   0.45   pF   ps   r bb' cc VCB = 4 V, I5 mA, f = 31.9 MHz   11   VCE = 4 V, IC = 100 µA/ VCE = 4 V, I 5 mA   hratio   0.75   1.6   ∆hFE   Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.   Publication date: May 2005   SJC00335AED   1 Download from Www.Somanuals.com. All Manuals Search And Download.   Request for your special attention and precautions in using the technical information and   semiconductors described in this book   (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and   regulations of the exporting country, especially, those with regard to security export control, must be observed.   (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples   of the products, and no license is granted under any intellectual property right or other right owned by our company or any other   company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other   company which may arise as a result of the use of technical information described in this book.   (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office   equipment, communications equipment, measuring instruments and household appliances).   Consult our sales staff in advance for information on the following applications:   – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support   systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-   ucts may directly jeopardize life or harm the human body.   – Any applications other than the standard applications intended.   (4) The products and product specifications described in this book are subject to change without notice for modification and/or im-   provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product   Standards in advance to make sure that the latest specifications satisfy your requirements.   (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions   (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute   maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any   defect which may arise later in your equipment.   Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure   mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire   or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.   (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,   thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which   damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.   (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita   Electric Industrial Co., Ltd.   Download from Www.Somanuals.com. All Manuals Search And Download.   |