Cypress MoBL CY62126EV30 User Manual

MoBL®,CY62126EV30  
1-Mbit (64K x 16) Static RAM  
Features  
Functional Description  
High speed: 45 ns  
The CY62126EV30 is a high performance CMOS static RAM  
organized as 64K words by 16 bits . This device features  
Temperature ranges  
Industrial: –40°C to +85°C  
Automotive: –40°C to +125°C  
advanced circuit design to provide ultra low active current. This  
®
is ideal for providing More Battery Life(MoBL ) in portable  
applications such as cellular telephones. The device also has an  
automatic power down feature that significantly reduces power  
consumption when addresses are not toggling. Placing the  
device in standby mode reduces power consumption by more  
than 99 percent when deselected (CE HIGH). The input and  
Wide voltage range: 2.2V to 3.6V  
Pin compatible with CY62126DV30  
Ultra low standby power  
Typical standby current: 1 μA  
Maximum standby current: 4 μA  
output pins (IO through IO ) are placed in a high impedance  
0
15  
state when:  
Deselected (CE HIGH)  
Ultra low active power  
Typical active current: 1.3 mA at f = 1 MHz  
Outputs are disabled (OE HIGH)  
Both Byte High Enable and Byte Low Enable are disabled  
(BHE, BLE HIGH)  
Easy memory expansion with CE and OE features  
Automatic power down when deselected  
CMOS for optimum speed and power  
Write operation is active (CE LOW and WE LOW)  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data  
from IO pins (IO through IO ) is written into the location  
Offered in Pb-free 48-ball VFBGA and 44-pin TSOP II  
packages  
0
7
specified on the address pins (A through A ). If Byte High  
0
15  
Enable (BHE) is LOW, then data from IO pins (IO through IO  
)
8
15  
is written into the location specified on the address pins (A  
0
through A ).  
15  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If  
Byte Low Enable (BLE) is LOW, then data from the memory  
location specified by the address pins appear on IO to IO . If  
0
7
Byte High Enable (BHE) is LOW, then data from memory  
appears on IO to IO . See the “Truth Table” on page 9 for a  
8
15  
complete description of read and write modes.  
Logic Block Diagram  
Note  
1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.  
Cypress Semiconductor Corporation  
Document #: 38-05486 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 5, 2009  
 
MoBL®, CY62126EV30  
DC Input Voltage  
...............−0.3V to 3.6V (V  
+ 0.3V)  
Maximum Ratings  
CCmax  
Output Current into Outputs (LOW)............................. 20 mA  
Exceeding maximum ratings may shorten the battery life of the  
device. These user guidelines are not tested.  
Static Discharge Voltage.......................................... > 2001V  
(MIL-STD-883, Method 3015)  
Storage Temperature ................................. –65°C to +150°C  
Latch up Current.................................................... > 200 mA  
Ambient Temperature with  
Power Applied ............................................ –55°C to +125°C  
Operating Range  
Supply Voltage to Ground  
Ambient  
Potential.................................0.3V to 3.6V (V  
+ 0.3V)  
+ 0.3V)  
[6]  
V
CC  
CCmax  
CCmax  
Device  
Range  
Temperature  
DC Voltage Applied to Outputs  
CY62126EV30LL Industrial  
–40°C to +85°C 2.2V to  
3.6V  
in High-Z State  
................0.3V to 3.6V (V  
Automotive –40°C to +125°C  
Electrical Characteristics (Over the Operating Range)  
45 ns (Industrial)  
55 ns (Automotive)  
Parameter  
Description  
Test Conditions  
= –0.1 mA  
Unit  
[1]  
Min Typ  
2.0  
Max  
Min Typ  
2.0  
Max  
V
Output HIGH Voltage  
I
I
I
I
V
V
OH  
OL  
IH  
OH  
OH  
OL  
OL  
= –1.0 mA, V > 2.70V  
2.4  
2.4  
CC  
V
V
V
I
Output LOW Voltage  
Input HIGH Voltage  
= 0.1 mA  
0.4  
0.4  
0.4  
0.4  
V
= 2.1mA, V > 2.70V  
V
CC  
V
V
V
V
= 2.2V to 2.7V  
= 2.7V to 3.6V  
= 2.2V to 2.7V  
= 2.7V to 3.6V  
1.8  
2.2  
V
V
+ 0.3 1.8  
V
V
+ 0.3  
V
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
+ 0.3 2.2  
+ 0.3  
V
Input LOW  
Voltage  
–0.3  
–0.3  
–1  
0.6  
0.8  
–0.3  
–0.3  
–4  
0.6  
V
IL  
0.8  
+4  
+4  
V
Input Leakage Current GND < V < V  
CC  
+1  
+1  
μA  
μA  
IX  
I
I
Output Leakage  
Current  
GND < V < V , Output  
–1  
–4  
OZ  
O
CC  
Disabled  
I
V
Operating Supply f = f  
= 1/t  
V
= V  
CCmax  
= 0 mA  
11  
16  
11  
35  
mA  
CC  
CC  
max  
RC  
CC  
Current  
I
OUT  
f = 1 MHz  
1.3  
2.0  
1.3  
4.0  
CMOS levels  
I
Automatic CE Power CE > V 0.2V,  
1
4
4
1
35  
30  
μA  
SB1  
CC  
down Current  
V
f = f  
> V – 0.2V, V < 0.2V)  
CC IN  
IN  
—CMOS Inputs  
(Address and Data Only),  
max  
f = 0 (OE, BHE, BLE and WE),  
= 3.60V  
V
CC  
I
Automatic CE Power CE > V – 0.2V,  
1
1
μA  
SB2  
CC  
down Current  
—CMOS Inputs  
V
> V – 0.2V or V < 0.2V,  
CC IN  
IN  
f = 0, V = 3.60V  
CC  
Capacitance  
For all packages. Tested initially and after any design or process changes that may affect these parameters.  
Parameter  
Description  
Input Capacitance  
Output Capacitance  
Test Conditions  
T = 25°C, f = 1 MHz, V = V  
CC(typ)  
Max  
10  
Unit  
pF  
C
C
IN  
OUT  
A
CC  
10  
pF  
Notes  
4.  
5.  
V
V
= –2.0V for pulse durations less than 20 ns.  
IL(min)  
= V +0.75V for pulse durations less than 20 ns.  
IH(max)  
CC  
6. Full device AC operation assumes a 100 μs ramp time from 0 to V (min) and 200 μs wait time after V stabilization.  
cc  
cc  
7. Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I  
/ I  
spec. Other inputs can be left floating.  
SB2 CCDR  
Document #: 38-05486 Rev. *E  
Page 3 of 13  
       
MoBL®, CY62126EV30  
Thermal Resistance  
Tested initially and after any design or process changes that may affect these parameters.  
VFBGA  
Package  
TSOP II  
Package  
Parameter  
Description  
Test Conditions  
Unit  
Θ
Θ
Thermal Resistance  
(Junction to Ambient)  
Still Air, soldered on a 4.25 x 1.125 inch,  
two-layer printed circuit board  
58.85  
28.2  
3.4  
°C/W  
JA  
Thermal Resistance  
(Junction to Case)  
17.01  
°C/W  
JC  
Figure 3. AC Test Loads and Waveforms  
R1  
ALL INPUT PULSES  
V
CC  
V
CC  
90%  
10%  
OUTPUT  
90%  
10%  
GND  
R2  
30 pF  
Rise Time = 1 V/ns  
Fall Time = 1 V/ns  
INCLUDING  
JIG AND  
SCOPE  
Equivalent to: THÉVENIN EQUIVALENT  
R
TH  
OUTPUT  
2.2V - 2.7V  
V
TH  
Parameters  
2.7V - 3.6V  
1103  
Unit  
Ohms  
Ohms  
Ohms  
Volts  
R1  
R2  
16600  
15400  
8000  
1.2  
1554  
R
V
645  
TH  
TH  
1.75  
Data Retention Characteristics  
Over the Operating Range  
Parameter  
Description  
Conditions  
Min  
Typ  
Max  
Unit  
V
V
V
for Data Retention  
1.5  
DR  
CC  
[7]  
I
Data Retention Current  
V
V
= V , CE > V – 0.2V,  
Industrial  
3
μA  
μA  
ns  
CCDR  
CC  
DR  
CC  
> V – 0.2V or V < 0.2V  
IN  
CC  
IN  
Automotive  
30  
t
t
Chip Deselect to Data  
Retention Time  
0
CDR  
R
Operation Recovery Time  
t
ns  
RC  
Figure 4. Data Retention Waveform  
DATA RETENTION MODE  
V
V
CC(min)  
CC(min)  
V
> 1.5V  
VCC  
CE  
DR  
t
t
R
CDR  
Notes  
8. Tested initially and after any design or process changes that may affect these parameters.  
9. Full device AC operation requires linear V ramp from V to V > 100 μs.  
CC  
DR  
CC(min)  
Document #: 38-05486 Rev. *E  
Page 4 of 13  
   
MoBL®, CY62126EV30  
Switching Characteristics  
Over the Operating Range  
45 ns (Industrial)  
55 ns (Automotive)  
Parameter  
Description  
Unit  
Min  
Max  
Min  
Max  
Read Cycle  
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Read Cycle Time  
45  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RC  
Address to Data Valid  
Data Hold from Address Change  
CE LOW to Data Valid  
OE LOW to Data Valid  
45  
55  
AA  
10  
10  
OHA  
ACE  
DOE  
LZOE  
HZOE  
LZCE  
HZCE  
PU  
45  
22  
55  
25  
OE LOW to Low Z  
5
10  
0
5
10  
0
OE HIGH to High Z  
18  
18  
20  
20  
CE LOW to Low Z  
CE HIGH to High Z  
CE LOW to Power Up  
CE HIGH to Power Down  
BHE / BLE LOW to Data Valid  
45  
22  
55  
25  
PD  
DBE  
LZBE  
HZBE  
BHE / BLE LOW to Low Z  
5
5
BHE / BLE HIGH to High Z  
18  
20  
Write Cycle  
t
Write Cycle Time  
45  
55  
ns  
WC  
t
t
t
t
CE LOW to Write End  
35  
35  
0
40  
40  
0
ns  
ns  
ns  
ns  
SCE  
AW  
HA  
Address Setup to Write End  
Address Hold from Write End  
Address Setup to Write Start  
0
0
SA  
t
t
t
t
WE Pulse Width  
35  
35  
25  
0
40  
40  
25  
0
ns  
ns  
ns  
ns  
PWE  
BW  
SD  
BHE / BLE Pulse Width  
Data Setup to Write End  
Data Hold from Write End  
HD  
t
t
WE LOW to High Z  
18  
20  
ns  
ns  
HZWE  
WE HIGH to Low Z  
10  
10  
LZWE  
Notes  
10. Test conditions assume signal transition time of 3 ns or less, timing reference levels of V  
/2, input pulse levels of 0 to V  
, and output loading of the  
CC(typ)  
CC(typ)  
specified I /I and 30-pF load capacitance.  
OL OH  
11. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.  
12. At any temperature and voltage condition, t is less than t , t is less than t , t is less than t , and t is less than t for any device.  
HZCE  
LZCE HZBE  
LZBE HZOE  
LZOE  
HZWE  
LZWE  
13. t  
, t  
, t  
, and t  
transitions are measured when the outputs enter a high impedance state.  
HZOE HZCE HZBE  
HZWE  
14. The internal write time of the memory is defined by the overlap of WE, CE = V , BHE, BLE or both = V . All signals must be active to initiate a write and any of  
IL  
IL  
these signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write.  
Document #: 38-05486 Rev. *E  
Page 5 of 13  
         
MoBL®, CY62126EV30  
Switching Waveforms  
Figure 5. Read Cycle No. 1(Address transition controlled)  
t
RC  
ADDRESS  
t
AA  
t
OHA  
PREVIOUS DATA VALID  
DATA VALID  
DATA OUT  
Figure 6. Read Cycle No. 2 (OE controlled)  
ADDRESS  
CE  
t
RC  
t
PD  
HZCE  
t
t
ACE  
OE  
t
HZOE  
t
DOE  
t
LZOE  
BHE/BLE  
t
HZBE  
t
DBE  
t
LZBE  
HIGH  
IMPEDANCE  
HIGHIMPEDANCE  
DATA VALID  
DATA OUT  
t
LZCE  
t
PU  
V
50%  
50%  
CC  
I
SUPPLY  
SB  
CURRENT  
Notes  
15. The device is continuously selected. OE, CE = V , BHE, BLE, or both = V .  
IL  
IL  
16. WE is HIGH for read cycle.  
17. Address valid before or similar to CE and BHE, BLE transition LOW.  
Document #: 38-05486 Rev. *E  
Page 6 of 13  
     
MoBL®, CY62126EV30  
Switching Waveforms (continued)  
[14, 18, 19]  
Figure 7. Write Cycle No. 1 (WE controlled)  
t
WC  
ADDRESS  
CE  
tSCE  
t
t
HA  
AW  
t
SA  
t
PWE  
WE  
t
BW  
BHE/BLE  
OE  
t
HD  
t
SD  
DATAIN  
DATA IO  
t
HZOE  
Figure 8. Write Cycle No. 2 (CE controlled)  
t
WC  
ADDRESS  
CE  
t
SCE  
t
SA  
t
t
HA  
AW  
tPWE  
WE  
t
BW  
BHE/BLE  
OE  
t
t
SD  
HD  
DATAIN  
DATA IO  
t
HZOE  
Notes  
18. Data IO is high impedance if OE = V  
.
IH  
19. If CE goes HIGH simultaneously with WE = V , the output remains in a high impedance state.  
IH  
20. During this period, the IOs are in output state. Do not apply input signals.  
Document #: 38-05486 Rev. *E  
Page 7 of 13  
     
MoBL®, CY62126EV30  
Switching Waveforms (continued)  
Figure 9. Write Cycle No. 3 (WE controlled, OE LOW  
t
WC  
ADDRESS  
CE  
t
SCE  
t
BW  
BHE/BLE  
t
t
HA  
AW  
t
SA  
t
PWE  
WE  
t
HD  
t
SD  
DATA IO  
DATAIN  
t
LZWE  
t
HZWE  
Figure 10. Write Cycle No. 4 (BHE/BLE controlled, OE LOW)  
t
WC  
ADDRESS  
CE  
t
SCE  
t
t
HA  
AW  
tBW  
BHE/BLE  
WE  
t
SA  
tPWE  
tHZWE  
t
HD  
t
SD  
DATAIN  
DATA IO  
tLZWE  
Document #: 38-05486 Rev. *E  
Page 8 of 13  
MoBL®, CY62126EV30  
Truth Table  
CE  
H
L
WE  
X
OE  
X
BHE  
X
BLE  
X
Inputs/Outputs  
High Z  
High Z  
Data Out (IO –IO  
Mode  
Deselect/Power Down  
Output Disabled  
Read  
Power  
Standby (I  
)
SB  
X
X
H
H
Active (I  
Active (I  
Active (I  
)
)
)
CC  
CC  
CC  
L
H
L
L
L
)
15  
0
L
H
L
H
L
Data Out (IO –IO );  
Read  
0
7
IO –IO in High Z  
8
15  
L
H
L
L
H
Data Out (IO –IO );  
Read  
Active (I  
)
8
15  
CC  
IO –IO in High Z  
0
7
L
L
L
L
L
H
H
H
L
H
H
H
X
X
L
H
L
L
L
H
L
L
High Z  
Output Disabled  
Output Disabled  
Output Disabled  
Write  
Active (I  
Active (I  
Active (I  
Active (I  
Active (I  
)
)
)
)
)
CC  
CC  
CC  
CC  
CC  
High Z  
High Z  
L
Data In (IO –IO  
)
15  
0
L
H
Data In (IO –IO );  
Write  
0
7
IO –IO in High Z  
8
15  
L
L
X
L
H
Data In (IO –IO );  
Write  
Active (I  
)
8
15  
CC  
IO –IO in High Z  
0
7
Ordering Information  
Speed  
(ns)  
Package  
Diagram  
Operating  
Range  
Package Type  
Ordering Code  
45  
CY62126EV30LL-45BVXI 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free)  
CY62126EV30LL-45ZSXI 51-85087 44-pin Thin Small Outline Package II (Pb-free)  
Industrial  
55  
CY62126EV30LL-55BVXE 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free)  
CY62126EV30LL-55ZSXE 51-85087 44-pin Thin Small Outline Package II (Pb-free)  
Automotive  
Contact your local Cypress sales representative for availability of other parts.  
Document #: 38-05486 Rev. *E  
Page 9 of 13  
 
MoBL®, CY62126EV30  
Package Diagrams  
Figure 11. 48-Ball VFBGA (6 x 8 x 1 mm) (51-85150)  
BOTTOM VIEW  
A1 CORNER  
TOP VIEW  
Ø0.05 M C  
Ø0.25 M C A B  
Ø0.30 0.05(48X)  
A1 CORNER  
1
2
3
4
5
6
6
5
4
3
2
1
A
A
B
C
D
B
C
D
E
E
F
F
G
G
H
H
1.875  
A
A
0.75  
B
6.00 0.10  
3.75  
B
6.00 0.10  
0.15(4X)  
SEATING PLANE  
C
51-85150-*D  
Document #: 38-05486 Rev. *E  
Page 10 of 13  
MoBL®, CY62126EV30  
Package Diagrams (continued)  
Figure 12. 44-Pin TSOP II (51-85087)  
51-85087-*A  
Document #: 38-05486 Rev. *E  
Page 11 of 13  
MoBL®, CY62126EV30  
Document History Page  
®
Document Title: MoBL CY62126EV30, 1-Mbit (64K x 16) Static RAM  
Document Number: 38-05486  
Submission  
Date  
Orig. of  
Change  
Rev.  
ECN No.  
Description of Change  
**  
202760  
300835  
See ECN  
See ECN  
AJU  
SYT  
New data sheet  
*A  
Converted from Advance Information to Preliminary  
Specified Typical standby power in the Features Section  
Changed E3 ball from DNU to NC in the Pin Configuration for the FBGA Package  
and removed the footnote associated with it on page #2  
Changed t  
Changed t  
Changed t  
from 6 ns to 10 ns for both 35- and 45-ns speed bins, respectively  
OHA  
, t from 15 to 18 ns for 35-ns speed bin  
DOE SD  
, t  
, t  
from 12 and 15 ns to 15 and 18 ns for the 35- and  
HZOE HZBE HZWE  
45-ns speed bins, respectively  
Changed t from 12 and 15 ns to 18 and 22 ns for the 35- and 45-ns speed  
HZCE  
bins, respectively  
Changed t ,t  
from 25 and 40 ns to 30 and 35 ns for the 35- and 45-ns speed  
SCE BW  
bins, respectively  
Changed t from 25 to 30 ns and 40 to 35 ns for 35 and 45-ns speed bins respec-  
AW  
tively  
Changed t  
from 35 and 45 ns to 18 and 22 ns for the 35 and 45 ns speed bins  
DBE  
respectively  
Removed footnote that read “BHE.BLE is the AND of both BHE and BLE. Chip can  
be deselected by either disabling the chip enable signals or by disabling both BHE  
and BLE” on page # 4  
Removed footnote that read “If both BHE and BLE are toggled together, then t  
LZBE  
is 10 ns” on page # 5  
Added Pb-free package information  
*B  
461631  
See ECN  
NXR  
Converted from Preliminary to Final  
Removed 35 ns Speed Bin  
Removed “L” version of CY62126EV30  
Changed I  
Changed I  
Changed I  
Changed I  
Changed I  
from 8 mA to 11 mA and I  
from 12 mA to 16 mA for f = f  
CC (max) max  
CC (Typ)  
from 1.5 mA to 2.0 mA for f = 1 MHz  
CC (max)  
, I  
, I  
from 1 μA to 4 μA  
SB1 SB2 (max)  
from 0.5 μA to 1 μA  
SB1 SB2 (Typ)  
from 1.5 μA to 3 μA  
CCDR (max)  
Changed the AC Test load Capacitance value from 50 pF to 30 pF  
Changed t  
Changed t  
Changed t  
Changed t  
Changed t  
from 3 to 5 ns  
from 6 to 10 ns  
from 22 to 18 ns  
from 6 to 5 ns  
from 30 to 35 ns  
LZOE  
LZCE  
HZCE  
LZBE  
PWE  
Changed t from 22 to 25 ns  
SD  
Changed t  
from 6 to 10 ns  
LZWE  
Updated the Ordering Information table.  
*C  
*D  
*E  
925501  
1045260  
2631771  
See ECN  
See ECN  
01/07/09  
VKN  
VKN  
Added footnote #7 related to I and I  
Added footnote #11 related AC timing parameters  
SB2  
CCDR  
Added Automotive information  
Updated Ordering Information table  
NXR/PYRS Changed CE condition from X to L in Truth table for Output Disable mode  
Updated template  
Document #: 38-05486 Rev. *E  
Page 12 of 13  
MoBL®, CY62126EV30  
Sales, Solutions, and Legal Information  
Worldwide Sales and Design Support  
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office  
closest to you, visit us at cypress.com/sales.  
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CAN 2.0b  
USB  
© Cypress Semiconductor Corporation, 2008-2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of  
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for  
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as  
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems  
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),  
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,  
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress  
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without  
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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES  
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not  
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where  
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer  
assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Use may be limited by and subject to the applicable Cypress software license agreement.  
Document #: 38-05486 Rev. *E  
Revised January 5, 2009  
Page 13 of 13  
MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All products and company names mentioned in this document may be the trademarks of their respective  
holders.  

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