Philips Switch BUK216 50YT User Manual

Philips Semiconductors  
Product specification  
TOPFET high side switch  
SMD version  
BUK216-50YT  
QUICK REFERENCE DATA  
DESCRIPTION  
Monolithic single channel high side  
protected power switch in  
TOPFET2 technology assembled in  
a 5 pin plastic surface mount  
package.  
SYMBOL  
PARAMETER  
MAX.  
50  
UNIT  
V
VBG  
IL  
Continuous off-state supply voltage  
Continuous load current  
10  
A
APPLICATIONS  
Tj  
Continuous junction temperature  
150  
20  
˚C  
General controller for driving  
lamps, motors, solenoids, heaters.  
RON  
On-state resistance  
Tj = 25˚C  
m  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Vertical power TrenchMOS  
Low on-state resistance  
CMOS logic compatible  
Very low quiescent current  
Latched overtemperature  
protection  
BATT  
STATUS  
POWER  
Load current limiting  
at reduced level  
MOSFET  
INPUT  
Short circuit load detection  
Overvoltage and undervoltage  
shutdown with hysteresis  
Diagnostic status indication  
Voltage clamping for turn off  
of inductive loads  
CONTROL &  
PROTECTION  
CIRCUITS  
ESD protection on all pins  
Reverse battery, overvoltage  
and transient protection  
LOAD  
GROUND  
RG  
Fig.1. Elements of the TOPFET HSS with internal ground resistor.  
PINNING - SOT426  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
Ground  
mb  
B
I
2
Input  
TOPFET  
HSS  
G
L
3
(connected to mb)  
Status  
S
3
4
1 2  
4 5  
5
Load  
Fig. 2.  
Fig. 3.  
mb Battery  
March 2002  
1
Rev 1.200  
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Philips Semiconductors  
Product specification  
TOPFET high side switch  
SMD version  
BUK216-50YT  
STATIC CHARACTERISTICS  
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25˚C unless otherwise stated.  
SYMBOL PARAMETER  
Clamping voltages  
Battery to ground  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VBG  
VBL  
IG = 1 mA  
50  
50  
18  
20  
55  
55  
23  
25  
65  
65  
28  
30  
V
V
V
V
Battery to load  
IL = IG = 1 mA  
IL = 10 mA  
-VLG  
-VLG  
Negative load to ground  
Negative load voltage1  
IL = 15 A; tp = 300 µs  
Supply voltage  
battery to ground  
VBG  
Operating range2  
5.5  
-
35  
V
Currents  
Quiescent current3  
9 V VBG 16 V  
VLG = 0 V  
IB  
IL  
-
-
-
-
-
-
-
0.1  
-
20  
2
µA  
µA  
µA  
µA  
mA  
A
Tmb = 25˚C  
Tmb = 25˚C  
Tmb = 85˚C  
Off-state load current4  
VBL = VBG  
20  
1
0.1  
2
IG  
IL  
Operating current5  
Nominal load current6  
IL = 0 A  
4
VBL = 0.5 V  
-
-
Resistances  
VBG  
IL  
tp7  
Tmb  
RON  
RON  
On-state resistance  
9 to 35 V  
5 A  
300 µs  
25˚C  
150˚C  
25˚C  
-
-
-
-
15  
-
20  
37  
25  
45  
mΩ  
mΩ  
mΩ  
mΩ  
On-state resistance  
6 V  
5 A  
300 µs  
18  
-
150˚C  
RG  
Internal ground resistance  
IG = 10 mA  
95  
150  
190  
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.  
2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.  
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.  
4 The measured current is in the load pin only.  
5 This is the continuous current drawn from the supply with no load connected, but with the input high.  
6 Defined as in ISO 10483-1. Because of current limiting, this parameter is not applicable.  
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.  
March 2002  
3
Rev 1.200  
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Philips Semiconductors  
Product specification  
TOPFET high side switch  
SMD version  
BUK216-50YT  
INPUT CHARACTERISTICS  
9 V VBG 16 V. Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
II  
Input current  
VIG = 5 V  
20  
5.5  
-
90  
7
160  
µA  
V
VIG  
Input clamping voltage  
Input turn-on threshold voltage  
Input turn-off threshold voltage  
Input turn-on hysteresis  
Input turn-on current  
II = 200 µA  
8.5  
VIG(ON)  
VIG(OFF)  
VIG  
II(ON)  
II(OFF)  
2.4  
2.1  
0.3  
-
3
V
1.5  
-
-
V
-
100  
-
V
VIG = 3 V  
-
µA  
µA  
Input turn-off current  
VIG = 1.5 V  
10  
-
STATUS CHARACTERISTICS  
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.  
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VSG  
VSG  
Status clamping voltage  
IS = 100 µA  
IS = 100 µA  
5.5  
7
-
8.5  
1
V
V
V
Status low voltage  
-
-
Tmb = 25˚C  
Tmb = 25˚C  
0.7  
0.8  
IS  
IS  
Status leakage current  
VSG = 5 V  
VSG = 5 V  
-
-
-
0.1  
7
15  
1
µA  
µA  
mA  
Status saturation current1  
2
12  
Application information  
RS  
External pull-up resistor  
-
47  
-
kΩ  
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to  
prevent possible interference with normal operation of the device.  
March 2002  
4
Rev 1.200  
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Philips Semiconductors  
Product specification  
TOPFET high side switch  
SMD version  
BUK216-50YT  
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS  
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Undervoltage  
VBG(UV)  
Low supply threshold voltage1  
2
-
4.2  
0.5  
5.5  
-
V
V
VBG(UV)  
Hysteresis  
Overvoltage  
VBG(OV)  
High supply threshold voltage2  
Hysteresis  
35  
-
45  
1
50  
-
V
V
VBG(OV)  
TRUTH TABLE  
ABNORMAL CONDITIONS  
DETECTED  
LOAD  
OUTPUT  
OT  
INPUT  
SUPPLY  
LOAD  
STATUS  
DESCRIPTION  
UV  
OV  
X
0
LC  
X
SC  
X
0
L
X
0
1
0
0
0
X
0
X
0
0
1
OFF  
ON  
H
H
H
H
L
off  
H
H
H
H
H
X
on & normal (LC not detected!)  
supply undervoltage lockout  
supply overvoltage shutdown  
SC detected (without trip)  
OT shutdown  
0
X
X
0
OFF  
OFF  
ON  
1
X
0
0
1
0
X
X
OFF  
L
KEY TO ABBREVIATIONS  
L
H
X
0
logic low  
UV undervoltage  
OV overvoltage  
logic high  
don’t care  
condition not present  
condition present  
LC low current or open circuit load  
SC short circuit  
1
OT overtemperature  
1 Undervoltage sensor causes the device to switch off and reset.  
2 Overvoltage sensor causes the device to switch off to protect its load.  
March 2002  
5
Rev 1.200  
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Philips Semiconductors  
Product specification  
TOPFET high side switch  
SMD version  
BUK216-50YT  
OVERLOAD PROTECTION / DETECTION CHARACTERISTICS  
6 V VBG 35 V, limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.  
Refer to TRUTH TABLE.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Overload protection  
VBL = VBG  
IL(lim)  
Load current limiting  
VBG 9 V  
10  
15  
21  
A
Short circuit load detection  
Status indication only  
VBL(TO)  
Battery load threshold voltage1  
VBG = 16 V  
VBG = 35 V  
8
10  
20  
12  
25  
V
V
15  
Overtemperature protection  
Tj(TO)  
Threshold junction  
temperature2  
150  
170  
190  
˚C  
SWITCHING CHARACTERISTICS  
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 .  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
During turn-on  
from input going high  
to 10% VL  
td on  
Delay time  
-
-
40  
60  
1
µs  
V/µs  
dV/dton  
Rate of rise of load voltage  
30% to 70% VL  
0.5  
t on  
Total switching time  
to 90% VL  
-
160  
225  
µs  
During turn-off3  
from input going low  
to 90% VL  
td off  
Delay time  
-
-
-
70  
0.5  
95  
100  
1
µs  
V/µs  
µs  
dV/dtoff  
t off  
Rate of fall of load voltage  
Total switching time  
70% to 30% VL  
to 10% VL  
130  
CAPACITANCES  
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.  
SYMBOL PARAMETER  
CONDITIONS  
VBG = 13 V  
VBL = 13 V  
VSG = 5 V  
MIN. TYP. MAX. UNIT  
Cig  
Cbl  
Csg  
Input capacitance  
Output capacitance  
Status capacitance  
-
-
-
15  
425  
11  
20  
600  
15  
pF  
pF  
pF  
1 The battery to load threshold voltage for short circuit detection is proportional to the battery supply voltage.  
2 Latched protection. After cooling below the threshold temperature the switch will resume normal operation only after the input has been  
toggled low.  
3 For measurement purposes an Input pulse of 1.5ms is used to ensure the device is stabilised in the on state.  
March 2002  
6
Rev 1.200  
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Philips Semiconductors  
Product specification  
TOPFET high side switch  
SMD version  
BUK216-50YT  
MECHANICAL DATA  
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 5 leads  
(one lead cropped)  
SOT426  
A
A
E
1
D
1
mounting  
base  
D
H
D
3
L
p
1
2
4
5
b
c
e
e
e
e
Q
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
D
A
A
L
H
Q
UNIT  
b
c
D
E
e
1
p
D
1
max.  
1.40  
1.27  
4.50  
4.10  
0.85  
0.60  
0.64  
0.46  
2.90 15.80 2.60  
2.10 14.80 2.20  
1.60  
1.20  
10.30  
9.70  
mm  
11  
1.70  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
98-12-14  
99-06-25  
SOT426  
Fig.4. SOT426 surface mounting package1, centre pin connected to mounting base.  
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.  
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.  
March 2002  
7
Rev 1.200  
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Philips Semiconductors  
Product specification  
TOPFET high side switch  
SMD version  
BUK216-50YT  
DEFINITIONS  
DATA SHEET STATUS  
DATA SHEET  
STATUS1  
PRODUCT  
STATUS2  
DEFINITIONS  
Objective data  
Development  
This data sheet contains data from the objective specification for  
product development. Philips Semiconductors reserves the right to  
change the specification in any manner without notice  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in  
order to improve the design, manufacturing and supply. Changes will  
be communicated according to the Customer Product/Process  
Change Notification (CPCN) procedure SNW-SQ-650A  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 2002  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
1 Please consult the most recently issued datasheet before initiating or completing a design.  
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is  
March 2002  
8
Rev 1.200  
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