Philips Stereo Amplifier TZA3046 User Manual

TZA3046  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
Rev. 01 — 19 May 2006  
Product data sheet  
1. General description  
The TZA3046 is a transimpedance amplifier with Automatic Gain Control (AGC), designed  
to be used in Fiber Channel/Gigabit Ethernet (FC/GE) fiber optic links. It amplifies the  
current generated by a photo detector (PIN diode or avalanche photodiode) and converts  
it to a differential output voltage. It offers a current mirror of average photo current for  
RSSI monitoring to be used in SFF-8472 compliant modules.  
The low noise characteristics makes it suitable for FC/GE applications, but also for  
FTTx applications.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
2. Features  
I Low equivalent input noise current, typically 126 nA (RMS)  
I Wide dynamic range, typically 2.5 µA to 1.7 mA (p-p)  
I Differential transimpedance of 7.5 k(typical)  
I Bandwidth from DC to 1050 MHz (typical)  
I Differential outputs  
I On-chip AGC with possibility of external control  
I Single supply voltage 3.3 V, range 2.97 V to 3.6 V  
I Bias voltage for PIN diode  
I On-chip current mirror of average photo current for RSSI monitoring  
I Identical ports available on both sides of die for easy bond layout and RF polarity  
selection  
3. Applications  
I Digital fiber optic receiver modules in telecommunications transmission systems, in  
high-speed data networks or in FTTx systems.  
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TZA3046  
Philips Semiconductors  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
6. Pinning information  
6.1 Pinning  
3
2
1
V
4
5
17  
16  
V
CC  
CC  
IDREF_MON  
AGC  
IDREF_MON  
AGC  
6
15  
TZA3046  
OUTQ  
OUT  
7
14  
OUT  
8
13  
OUTQ  
GND  
GND  
9
12  
GND  
10  
11  
GND  
001aae512  
Fig 2. Pin configuration  
6.2 Pin description  
Table 2:  
Bonding pad description  
Bonding pad locations with respect to the center of the die (see Figure 10); X and Y are in µm.  
Symbol  
Pad  
X
Y
Type  
Description  
DREF  
1
493.6 140  
output  
bias voltage output for PIN diode; connect cathode of PIN diode to  
pad 1 or pad 3  
IPHOTO  
DREF  
2
3
493.6  
0
input  
current input; anode of PIN diode should be connected to this pad  
493.6 140  
output  
bias voltage output for PIN diode; connect cathode of PIN diode to  
pad 1 or pad 3  
VCC  
4
5
353.6 278.6 supply  
supply voltage; connect supply voltage to pad 4 or pad 17  
IDREF_MON  
213.6 278.6 output  
current output for RSSI measurements; connect a resistor to pad 5  
or pad 16 and ground  
AGC  
OUTQ  
OUT  
6
7
8
9
73.6  
66.4  
278.6 input  
278.6 output  
278.6 output  
278.6 ground  
AGC voltage; use pad 6 or pad 15  
data output; complement of pad OUT; use pad 7 or pad 13  
data output; use pad 8 or pad 14 [1]  
206.4  
346.4  
GND  
ground; connect together pads 9, 10, 11 and pad 12 as many as  
possible  
GND  
10  
486.4  
278.6 ground  
ground; connect together pads 9, 10, 11 and pad 12 as many as  
possible  
TZA3046_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2006  
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TZA3046  
Philips Semiconductors  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
Table 2:  
Bonding pad description …continued  
Bonding pad locations with respect to the center of the die (see Figure 10); X and Y are in µm.  
Symbol  
Pad  
X
Y
Type  
Description  
GND  
11  
486.4  
278.6  
ground  
ground; connect together pads 9, 10, 11 and pad 12 as many as  
possible  
GND  
12  
346.4  
278.6  
ground  
ground; connect together pads 9, 10, 11 and pad 12 as many as  
possible  
OUTQ  
OUT  
13  
14  
15  
206.4  
66.4  
278.6  
278.6  
278.6  
output  
output  
input  
data output; complement of pad OUT; use pad 7 or pad 13  
data output; use pad 8 or pad 14 [1]  
AGC  
73.6  
AGC voltage; use pad 6 or pad 15  
IDREF_MON 16  
213.6 278.6  
output  
current output for RSSI measurements; connect a resistor to pad 5  
or pad 16 and ground  
VCC 17  
353.6 278.6  
supply  
supply voltage; connect supply voltage to pad 4 or pad 17  
[1] These pads go HIGH when current flows into pad IPHOTO.  
7. Functional description  
The TZA3046 is a TransImpedance Amplifier (TIA) intended for use in fiber optic receivers  
for signal recovery in FC/GE or FTTx applications. It amplifies the current generated by a  
photo detector (PIN diode or avalanche photodiode) and converts it to a differential output  
voltage.  
The most important characteristics of the TZA3046 are high receiver sensitivity, wide  
dynamic range and large bandwidth. Excellent receiver sensitivity is achieved by  
minimizing transimpedance amplifier noise.  
The TZA3046 has a wide dynamic range to handle the signal current generated by the  
PIN diode which can vary from 2.5 µA to 1.7 mA (p-p). This is implemented by an AGC  
loop which reduces the preamplifier feedback resistance so that the amplifier remains  
linear over the whole input range. The AGC loop hold capacitor is integrated on-chip, so  
an external capacitor is not required.  
The bandwidth of TZA3046 is optimized for FC/GE application. It works from DC onward  
due to the absence of offset control loops. Therefore the amount of Consecutive Identical  
Digits (CID) will not effect the output waveform. A differential amplifier converts the output  
of the preamplifier to a differential voltage.  
7.1 PIN diode connections  
The performance of an optical receiver is largely determined by the combined effect of the  
transimpedance amplifier and the PIN diode. In particular, the method used to connect the  
PIN diode to the input (pad IPHOTO) and the layout around the input pad strongly  
influences the main parameters of a transimpedance amplifier, such as sensitivity,  
bandwidth, and PSRR.  
Sensitivity is most affected by the value of the total capacitance at the input pad.  
Therefore, to obtain the highest possible sensitivity the total capacitance should be as low  
as possible.  
TZA3046_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2006  
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TZA3046  
Philips Semiconductors  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
The parasitic capacitance can be minimized through:  
1. Reducing the capacitance of the PIN diode. This is achieved by proper choice of PIN  
diode and typically a high reverse voltage.  
2. Reducing the parasitics around the input pad. This is achieved by placing the PIN  
diode as close as possible to the TIA.  
The PIN diode can be biased with a positive or a negative voltage. Figure 3 shows the PIN  
diode biased positively, using the on-chip bias pad DREF. The voltage at DREF is derived  
from VCC by a low-pass filter comprising internal resistor RDREF and external capacitor C2  
which decouples any supply voltage noise. The value of external capacitor C2 affects the  
value of PSRR and should have a minimum value of 470 pF. Increasing this value  
improves the value of PSRR. The current through RDREF is measured and sourced at pad  
IDREF_MON, see Section 7.3.  
If the biasing for the PIN diode is done external to the IC, pad DREF can be left  
unconnected. If a negative bias voltage is used, the configuration shown in Figure 4 can  
be used. In this configuration, the direction of the signal current is reversed to that shown  
in Figure 3. It is essential that in these applications, the PIN diode bias voltage is filtered to  
achieve the best sensitivity.  
For maximum freedom on bonding location, 2 outputs are available for DREF (pads 1  
and 3). These are internally connected. Both outputs can be used if necessary. If only one  
is used, the other can be left open.  
V
CC  
V
CC  
4 or 17  
4 or 17  
R
DREF  
DREF 1 or 3  
R
DREF  
DREF 1 or 3  
290 Ω  
I
290 Ω  
PIN  
C2  
470 pF  
IPHOTO  
2
IPHOTO  
2
I
PIN  
TZA3046  
TZA3046  
negative  
001aae513  
bias voltage  
001aae514  
Fig 3. The PIN diode connected between  
the input and pad DREF  
Fig 4. The PIN diode connected between  
the input and a negative supply  
voltage  
TZA3046_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2006  
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TZA3046  
Philips Semiconductors  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
7.2 Automatic gain control  
The TZA3046 transimpedance amplifier can handle input currents from 2.5 µA to 1.7 mA  
which is equivalent to a dynamic range of 56 dB (electrical equivalent with 28 dB optical).  
At low input currents, the transimpedance must be high to obtain enough output voltage,  
and the noise should be low enough to guarantee a minimum bit error rate. At high input  
currents however, the transimpedance should be low to prevent excessive distortion at the  
output stage. To achieve the dynamic range, the gain of the amplifier depends on the level  
of the input signal. This is achieved in the TZA3046 by an AGC loop.  
The AGC loop comprises a peak detector and a gain control circuit. The peak detector  
detects the amplitude of the signal and stores it in a hold capacitor. The hold capacitor  
voltage is compared to a threshold voltage. The AGC is only active when the input signal  
level is larger than the threshold level and is inactive when the input signal is smaller than  
the threshold level.  
When the AGC is inactive, the transimpedance is at its maximum. When the AGC is  
active, the feedback resistor value of the transimpedance amplifier is reduced, reducing its  
transimpedance, to keep the output voltage constant. Figure 5 shows the transimpedance  
as function of the input current.  
To reduce sensitivity to offsets and output loads, the AGC detector senses the output just  
before the output buffer. Figure 6 shows the AGC voltage as function of the input current.  
001aae515  
001aae516  
10  
3.5  
V
AGC  
(V)  
transimpedance  
(k)  
2.5  
1
1.5  
0.5  
1  
10  
2
3
4
2
3
4
1
10  
10  
10  
10  
1
10  
10  
10  
10  
I
(µA)  
I
(µA)  
PIN  
PIN  
Fig 5. Transimpedance as function of the PIN diode  
current  
Fig 6. AGC voltage as function of the PIN diode  
current  
TZA3046_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2006  
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TZA3046  
Philips Semiconductors  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
For applications where the transimpedance is controlled by the TIA it is advised to leave  
the AGC pads unconnected to achieve fast attack and decay times.  
The AGC function can be overruled by applying a voltage to pad AGC. In this  
configuration, connecting pad AGC to ground gives maximum transimpedance and  
connecting it to VCC gives minimum transimpedance. This is depicted in Figure 7. The  
AGC voltage should be derived from the VCC for proper functioning.  
For maximum freedom on bonding location, 2 pads are available for AGC (pads 6 and 15).  
These pads are internally connected. Both pads can be used if necessary.  
001aae517  
10  
transimpedance  
(k)  
1
1  
10  
0.3  
0.5  
0.7  
0.9  
V
/V  
AGC CC  
Fig 7. Transimpedance as function of the AGC voltage  
7.3 Monitoring RSSI via IDREF_MON  
To facilitate RSSI monitoring in modules (e.g. SFF-8472 compliant SFP modules), a  
current output is provided. This output gives a current which is 20 % of the average DREF  
current through the 290 bias resistor. By connecting a resistor to the IDREF_MON  
output, a voltage proportional to the average input power can be obtained.  
The RSSI monitoring is implemented by measuring the voltage over the 290 bias  
resistor. This method is preferred over a simple current mirror because at small photo  
currents the voltage drop over the resistor is very small. This gives a higher bias voltage  
yielding better performance of the photodiode.  
For maximum freedom on bonding location, 2 pads are available for IDREF_MON (pads 5  
and 16). These pads are internally connected. Both pads can be used if necessary. If only  
one is used, the other can be left open.  
TZA3046_1  
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Product data sheet  
Rev. 01 — 19 May 2006  
7 of 15  
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TZA3046  
Philips Semiconductors  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
8. Limiting values  
Table 3:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
Unit  
VCC  
Vn  
supply voltage  
0.5  
+3.8  
V
voltage on any other  
pin  
pad  
IPHOTO  
0.5  
0.5  
0.5  
0.5  
+2.0  
V
V
V
V
OUT, OUTQ  
AGC, IDREF_MON  
DREF  
VCC + 0.5  
VCC + 0.5  
VCC + 0.5  
In  
current on any other  
pin  
pad  
IPHOTO  
4.0  
10  
0.2  
4.0  
-
+4.0  
+10  
+0.2  
+4.0  
300  
mA  
mA  
mA  
mA  
mW  
°C  
OUT, OUTQ  
AGC, IDREF_MON  
DREF  
Ptot  
Tamb  
Tj  
total power dissipation  
ambient temperature  
junction temperature  
storage temperature  
40  
-
+85  
150  
°C  
Tstg  
65  
+150  
°C  
9. Characteristics  
Table 4:  
Characteristics  
Typical values at Tj = 25 °C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature  
range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified.  
Symbol  
VCC  
Parameter  
Conditions  
Min  
2.97  
-
Typ  
3.3  
21  
Max  
3.6  
23  
Unit  
V
supply voltage  
supply current  
ICC  
AC-coupled; RL(dif) = 100 ;  
excluding IDREF and IIDREF_MON  
mA  
Ptot  
Tj  
total power dissipation  
junction temperature  
ambient temperature  
VCC = 3.3 V  
-
70  
-
76  
mW  
°C  
40  
40  
5.5  
+125  
+85  
10.5  
Tamb  
Rtr  
+25  
7.5  
°C  
small-signal  
transresistance  
measured differentially;  
AC-coupled, RL(dif) = 100 Ω  
kΩ  
f-3dB(h)  
high frequency  
3 dB point  
CPIN = 0.5 pF  
800  
-
1050  
126  
-
MHz  
nA  
In(rms)(itg)(tot)  
total integrated RMS noise referenced to input;  
current over bandwidth PIN = 0.5 pF;  
-3dB(min) = 875 MHz  
164  
C
f
Automatic gain control loop: pad AGC  
tatt  
attack time  
decay time  
AGC pad unconnected  
AGC pad unconnected  
-
-
-
14  
-
-
-
µs  
tdecay  
40  
µs  
Vth(AGC)(p-p)  
peak-to-peak AGC  
threshold voltage  
referenced to output;  
measured differentially  
125  
mV  
TZA3046_1  
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Product data sheet  
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Fiber Channel/Gigabit Ethernet transimpedance amplifier  
Table 4:  
Characteristics …continued  
Typical values at Tj = 25 °C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature  
range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified.  
Symbol  
Bias voltage: pad DREF  
R(DREF-VCC) resistance between pin  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
tested at DC level;  
Tamb = 25 °C  
260  
-
290  
320  
-
DREF and pin VCC  
TCRDREF  
temperature coefficient of  
RDREF  
0.33  
/°C  
Input: pad IPHOTO  
IIPHOTO(p-p)  
peak-to-peak current on  
pad IPHOTO  
1000 +1700  
-
µA  
Vbias(i)  
input bias voltage  
700  
850  
1000  
mV  
Monitor: pad IDREF_MON  
Vmon  
monitor voltage  
0
-
VCC 0.4 V  
IIDREF_MON/IDREF monitor current ratio  
ratio IIDREF_MON / IDREF  
19.5  
20  
10  
30  
20.5  
20  
-
%
Ioffset(mon)  
monitor offset current  
Tamb = 25 °C  
0
-
µA  
TCI(offset)mon  
temperature coefficient of  
monitor offset current  
nA/°C  
Data outputs: pads OUT and OUTQ  
VO(cm)  
common mode output  
voltage  
AC-coupled; RL(dif) = 100 Ω  
-
VCC 1.2 -  
V
Vo(dif)(p-p)  
peak-to-peak differential  
output voltage  
AC-coupled; RL(dif) = 100 Ω  
IPIN = 2.5 µA (p-p) × Rtr  
IPIN = 100 µA (p-p)  
14  
-
19  
-
mV  
mV  
mV  
120  
325  
100  
-
IPIN = 1500 µA (p-p)  
tested at DC level  
-
600  
-
RO(dif)  
differential output  
resistance  
-
tr  
tf  
rise time  
20 % to 80 %;  
-
-
150  
150  
-
-
ps  
ps  
I
PIN = 100 µA (p-p)  
80 % to 20 %;  
PIN = 100 µA (p-p)  
fall time  
I
[1] Guaranteed by design.  
[2] Max input current is guaranteed for BER < 1010  
[3] Max input current is guaranteed for Tamb = 25°  
[4] Max value of 500 mV belongs to IPIN = 1250 µA (p-p)  
TZA3046_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2006  
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TZA3046  
Philips Semiconductors  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
10. Application information  
For maximum freedom on bonding location, 2 outputs are available for OUT and OUTQ.  
The outputs should be used in pairs: pad 14 with pad 7 or pad 8 with pad 13. Pad 8 is  
internally connected with pad 14, pad 7 is internally connected with pad 13. The device is  
guaranteed with only one pair used. The other pair should be left open. Two examples of  
the bonding possibilities are shown in Figure 8.  
V
V
CC  
CC  
IDREF_MON  
IDREF_MON  
C
C
PIN  
PIN  
C
C
TZA3046U  
TZA3046U  
OUT  
OUTQ  
OUTQ  
OUT  
GND  
GND  
001aae518  
Fig 8. Application diagram highlighting flexible pad lay out  
TZA3046_1  
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NETWORK ANALYZER  
S-PARAMETER TEST SET  
PORT1  
PORT2  
Z = 50 Ω  
Z
o
= 50 Ω  
o
V
CC  
SAMPLING OSCILLOSCOPE  
TRIGGER  
DC-IN  
4 or 17  
8 or 14  
22 nF  
22 nF  
OUT  
1
2
INPUT  
8.2  
kΩ  
Z
= 50 Ω  
o
TZA3046  
22 nF  
330 Ω  
IPHOTO  
PATTERN  
2
OUTQ  
R
GENERATOR  
7 or 13  
DATA  
55 Ω  
9, 10, 11, 12  
GND  
CLOCK  
001aae519  
Total impedance of the test circuit (Ztot(tc)) is calculated by the equation Ztot(tc) = s21 × (R + Zi) × 2, where s21 is the insertion loss of ports 1 and 2.  
Typical values: R = 330 , Zi = 30 .  
Fig 9. Test circuit  
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TZA3046  
Philips Semiconductors  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
12. Bare die information  
17  
16  
15  
14  
13  
12  
11  
1
2
3
Y
X
(0,0)  
4
5
6
7
8
9
10  
001aac627  
Origin is center of die.  
Fig 10. Bonding pad locations  
Table 5:  
Physical characteristics of the bare die  
Value  
Parameter  
Glass passivation  
0.3 µm PSG (PhosphoSilicate Glass) on top of 0.8 µm silicon nitride  
Bonding pad  
dimension  
minimum dimension of exposed metallization is 90 µm × 90 µm  
(pad size = 100 µm × 100 µm) except pads 2 and 3 which have exposed  
metallization of 80 µm × 80 µm (pad size = 90 µm × 90 µm)  
Metallization  
Thickness  
2.8 µm AlCu  
380 µm nominal  
Die dimension  
Backing  
820 µm × 1300 µm (± 20 µm2)  
silicon; electrically connected to GND potential through substrate contacts  
< 440 °C; recommended die attach is glue  
< 15 s  
Attach temperature  
Attach time  
13. Package outline  
Not applicable.  
TZA3046_1  
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Product data sheet  
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Fiber Channel/Gigabit Ethernet transimpedance amplifier  
14. Handling information  
14.1 General  
Inputs and outputs are protected against electrostatic discharge in normal handling.  
However, to be completely safe you must take normal precautions appropriate to handling  
MOS devices; see JESD625-A and/or IEC61340-5.  
14.2 Additional information  
Pad IPHOTO has limited protection to ensure good RF performance. This pad should be  
handled with extreme care.  
15. Abbreviations  
Table 6.  
Abbreviations  
Description  
Acronym  
BER  
Bit Error Rate  
FTTx  
OC3  
Fiber To The “x”  
Optical Carrier level 3 (155.52 Mbit/s)  
Positive Intrinsic Negative  
PIN  
PSRR  
RSSI  
SDH  
Power Supply Rejection Ratio  
Received Signal Strength Indicator  
Synchronous Digital Hierarchy  
Small Form-factor Pluggable  
Synchronous Optical NETwork  
Synchronous Transport Module 1 (155.52 Mbit/s  
SFP  
SONET  
STM1  
16. Revision history  
Table 7.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
TZA3046_1  
20060519  
Product data sheet  
-
-
TZA3046_1  
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Product data sheet  
Rev. 01 — 19 May 2006  
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TZA3046  
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Fiber Channel/Gigabit Ethernet transimpedance amplifier  
17. Legal information  
17.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.semiconductors.philips.com.  
Limiting values — Stress above one or more limiting values (as defined in  
17.2 Definitions  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and and  
operation of the device at these or any other conditions above those given in  
the Characteristics sections of this document is not implied. Exposure to  
limiting values for extended periods may affect device reliability.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Philips Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Terms and conditions of sale — Philips Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
pertaining to warranty, intellectual property rights infringement and limitation  
of liability, unless explicitly otherwise agreed to in writing by Philips  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Philips Semiconductors  
sales office. In case of any inconsistency or conflict with the short data sheet,  
the full data sheet shall prevail.  
Semiconductors. In case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter will prevail.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
17.3 Disclaimers  
Bare die — All die are tested on compliance with all related technical  
specifications as stated in this data sheet up to the point of wafer sawing for a  
period of ninety (90) days from the date of delivery by Philips  
Semiconductors. If there are data sheet limits not guaranteed, these will be  
separately indicated in the data sheet. There are no post-packing tests  
performed on individual die or wafers.  
General — Information in this document is believed to be accurate and  
reliable. However, Philips Semiconductors does not give any representations  
or warranties, expressed or implied, as to the accuracy or completeness of  
such information and shall have no liability for the consequences of use of  
such information.  
Philips Semiconductors has no control of third party procedures in the  
sawing, handling, packing or assembly of the die. Accordingly, Philips  
Semiconductors assumes no liability for device functionality or performance  
of the die or systems after third party sawing, handling, packing or assembly  
of the die. It is the responsibility of the customer to test and qualify their  
application in which the die is used.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
All die sales are conditioned upon and subject to the customer entering into a  
written die sale agreement with Philips Semiconductors through its legal  
department.  
Suitability for use — Philips Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of a Philips Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Philips Semiconductors accepts no liability for inclusion and/or use  
of Philips Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is for the customer’s own risk.  
17.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Philips Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
18. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: [email protected]  
TZA3046_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 19 May 2006  
14 of 15  
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TZA3046  
Philips Semiconductors  
Fiber Channel/Gigabit Ethernet transimpedance amplifier  
19. Contents  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Koninklijke Philips Electronics N.V. 2006.  
All rights reserved.  
Date of release: 19 May 2006  
Document identifier: TZA3046_1  
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