Philips Stereo Amplifier TDA8543 User Manual

INTEGRATED CIRCUITS  
DATA SHEET  
TDA8543  
2 W BTL audio amplifier  
1997 Jun 12  
Product specification  
File under Integrated Circuits, IC01  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
BLOCK DIAGRAM  
handbook, halfpage  
TDA8543  
11  
6
OUT  
IN−  
+
5
IN+  
R
12  
V
R
CC  
+
14  
20 kΩ  
OUT+  
4
3
SVR  
20 kΩ  
MODE  
STANDBY/MUTE LOGIC  
13  
GND  
MGK402  
Fig.1 Block diagram.  
PINNING  
SYMBOL  
PIN  
DESCRIPTION  
not connected  
n.c.  
1
2
3
n.c.  
not connected  
handbook, halfpage  
MODE  
operating mode select  
n.c.  
n.c.  
1
2
3
4
5
6
7
8
16  
n.c.  
(standby, mute, operating)  
15  
14  
13  
12  
11  
10  
9
n.c  
SVR  
4
half supply voltage, decoupling  
ripple rejection  
MODE  
SVR  
IN+  
OUT+  
GND  
IN+  
5
6
positive input  
TDA8543  
IN−  
n.c.  
negative input  
V
CC  
7
not connected  
IN−  
OUT−  
n.c.  
n.c.  
8
not connected  
n.c.  
n.c.  
9
not connected  
n.c  
n.c.  
n.c.  
10  
11  
12  
13  
14  
15  
16  
not connected  
MGK401  
OUT−  
VCC  
GND  
OUT+  
n.c.  
negative loudspeaker terminal  
supply voltage  
ground  
positive loudspeaker terminal  
not connected  
Fig.2 Pin configuration.  
n.c.  
not connected  
1997 Jun 12  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
The voltage loss on the positive supply line is  
FUNCTIONAL DESCRIPTION  
the saturation voltage of a PNP power transistor,  
on the negative side the saturation voltage of an  
NPN power transistor.  
The TDA8543(T) is a BTL audio power amplifier capable  
of delivering an output power between 1 and 2 W,  
depending on supply voltage, load resistance  
and package. Using the MODE pin the device can  
be switched to standby and mute condition. The device  
is protected by an internal thermal shutdown protection  
mechanism.  
Mode select pin  
The device is in standby mode (with a very low current  
consumption) if the voltage at the MODE  
pin is >(VCC 0.5 V), or if this pin is floating. At a MODE  
voltage level of less than 0.5 V the amplifier is fully  
operational.  
The gain can be set within a range from 6 dB to 30 dB  
by external feedback resistors.  
In the range between 1.5 V and VCC 1.5 V the amplifier  
is in mute condition. The mute condition is useful to  
suppress plop noise at the output, caused by charging of  
the input capacitor.  
Power amplifier  
The power amplifier is a Bridge Tied Load (BTL) amplifier  
with a complementary PNP-NPN output stage.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
0.3  
MAX.  
+18  
UNIT  
operating  
V
VI  
input voltage  
0.3  
55  
40  
VCC + 0.3  
1
V
IORM  
Tstg  
Tamb  
Vpsc  
Ptot  
repetitive peak output current  
storage temperature  
A
non-operating  
+150  
+85  
10  
°C  
°C  
V
operating ambient temperature  
AC and DC short-circuit safe voltage  
total power dissipation  
SO16  
DIP16  
1.2  
W
W
2.2  
QUALITY SPECIFICATION  
In accordance with “SNW-FQ-611-E”. The number of the quality specification can be found in the “Quality Reference  
Handbook”. The handbook can be ordered using the code 9397 750 00192.  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
PARAMETER  
CONDITIONS  
in free air  
VALUE  
UNIT  
thermal resistance from junction to ambient  
TDA8543T (SO16)  
100  
55  
K/W  
K/W  
TDA8543 (DIP16)  
1997 Jun 12  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
MGK410  
2.5  
handbook, halfpage  
P
(W)  
2.0  
1.5  
1
(1)  
(2)  
0.5  
0
0
40  
80  
120  
T
160  
(°C)  
amb  
(1) DIP16.  
(2) SO16.  
Fig.3 Power derating curve.  
Table 1  
CONTINUOUS SINE WAVE DRIVEN  
V
CC (V)  
RL ()  
Po (W)(1)  
Tamb(max) (°C)  
Pmax (W)  
SO16  
DIP16  
5
7.5  
7.5  
9
8
1.2  
2.2  
1.4  
2.0  
1.3  
0.7  
1.6  
0.9  
1.3  
0.9  
80  
60  
112  
62  
8
16  
16  
25  
100  
78  
9
60  
100  
Note  
1. At THD = 10%; BTL.  
1997 Jun 12  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
DC CHARACTERISTICS  
VCC = 5 V; Tamb = 25 °C; RL = 8 ; VMODE = 0 V; G = 20 dB; measured in test circuit Fig.4; unless otherwise specified.  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
2.2  
TYP.  
MAX.  
18  
UNIT  
operating  
5
8
V
Iq  
quiescent current  
standby current  
DC output voltage  
RL = ; note 1  
VMODE = VCC  
note 2  
0
12  
10  
50  
500  
0.5  
mA  
µA  
V
Istb  
VO  
2.2  
VOUT+ VOUTdifferential output voltage offset  
mV  
nA  
V
I
IN+, IIN−  
input bias current  
VMODE  
input voltage mode select  
operating  
mute  
1.5  
VCC 1.5 V  
standby  
VCC 0.5  
VCC  
20  
V
IMODE  
input current mode select  
0 < VMODE < VCC  
µA  
Notes  
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal  
to the DC output offset voltage divided by RL.  
2. The DC output voltage with respect to ground is approximately 0.5 × VCC  
.
AC CHARACTERISTICS  
VCC = 5 V; Tamb = 25 °C; RL = 8 ; f = 1 kHz; VMODE = 0 V; G = 20 dB; measured in test circuit Fig.4; unless otherwise  
specified.  
SYMBOL  
PARAMETER  
output power  
CONDITIONS  
THD = 10%;  
VCC = 5 V; RL = 8 Ω  
MIN.  
TYP.  
MAX.  
UNIT  
Po  
1
1.2  
W
V
CC = 7.5 V; RL = 8 Ω  
2.2  
2.0  
W
W
VCC = 9 V; RL = 16 Ω  
THD = 0.5%;  
VCC = 5 V; RL = 8 Ω  
0.6  
6
0.9  
1.7  
1.4  
0.15  
100  
0.3  
30  
100  
W
VCC = 7.5 V; RL = 8 Ω  
W
VCC = 9 V; RL = 16 Ω  
W
THD  
Gv  
total harmonic distortion  
closed loop voltage gain  
differential input impedance  
noise output voltage  
Po = 0.5 W  
note 1  
%
dB  
kΩ  
µV  
dB  
dB  
µV  
Zi  
50  
40  
Vno  
note 2  
note 3  
note 4  
SVRR  
supply voltage ripple rejection  
200  
Vo  
output voltage in mute condition note 5  
1997 Jun 12  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
Notes to the AC characteristics  
R2  
R1  
1. Gain of the amplifier is 2 ×  
in test circuit of Fig.4.  
-------  
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with  
a source impedance of RS = 0 at the input.  
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 at the input.  
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied  
to the positive supply rail.  
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 at the input.  
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),  
which is applied to the positive supply rail.  
5. Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, so including  
noise.  
TEST AND APPLICATION INFORMATION  
Test conditions  
SE application  
Tamb = 25 °C if not specially mentioned, VCC = 7.5 V,  
f = 1 kHz, RL = 4 , Gv = 20 dB, audio band-pass  
22 Hz to 22 kHz.  
Because the application can be either Bridge Tied Load  
(BTL) or Single-Ended (SE), the curves of each application  
are shown separately.  
The SE application diagram is shown in Fig.14.  
The capacitor value of C3 in combination with the load  
impedance determines the low frequency behaviour.  
The total harmonic distortion as a function of frequency  
was measured with low-pass filter of 80 kHz. The value  
of capacitor C2 influences the behaviour of the SVRR  
at low frequencies, increasing the value of C2 increases  
the performance of the SVRR.  
The thermal resistance = 55 K/W for the DIP16 envelope;  
the maximum sine wave power dissipation  
for Tamb = 25 °C is:  
150 25  
= 2.27 W  
----------------------  
55  
For Tamb = 60 °C the maximum total power dissipation is:  
150 60  
= 1.63 W  
----------------------  
General remark  
55  
The frequency characteristic can be adapted  
by connecting a small capacitor across the feedback  
resistor. To improve the immunity of HF radiation in radio  
circuit applications, a small capacitor can be connected  
in parallel with the feedback resistor; this creates a  
low-pass filter.  
See the power derating curve illustrated in Fig.3.  
BTL application  
T
amb = 25 °C if not specially mentioned, VCC = 5 V,  
f = 1 kHz, RL = 8 , Gv = 20 dB, audio band-pass  
22 Hz to 22 kHz.  
The BTL application diagram is shown in Fig.4.  
The quiescent current has been measured without  
any load impedance. The total harmonic distortion  
as a function of frequency was measured with a low-pass  
filter of 80 kHz. The value of capacitor C2 influences  
the behaviour of the SVRR at low frequencies, increasing  
the value of C2 increases the performance of the SVRR.  
The figure of the mode select voltage (Vms) as a function  
of the supply voltage shows three areas; operating, mute  
and standby. It shows, that the DC-switching levels  
of the mute and standby respectively depends  
on the supply voltage level.  
1997 Jun 12  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
BTL APPLICATION  
V
CC  
100 µF  
R2  
R1  
56 kΩ  
100 nF  
12  
C1  
+
IN  
6
5
4
3
+
OUT  
OUT  
11  
14  
11 kΩ  
1 µF  
IN  
R
V
TDA8543  
L
SVR  
in  
MODE  
C2  
47 µF  
13  
GND  
MGK403  
R2  
Gain = 2 × -------  
R1  
Fig.4 BTL application.  
MGD876  
MGK404  
10  
15  
handbook, halfpage  
handbook, halfpage  
I
q
THD  
(%)  
(mA)  
(1)  
(3) (2)  
10  
1
1  
5
10  
2  
0
0
10  
2  
1  
4
8
12  
16  
20  
(V)  
10  
10  
1
10  
P
o
(W)  
V
CC  
f = 1 kHz, Gv = 20 dB.  
(1) VCC = 5 V, RL = 8 .  
(2) VCC = 7.5 V, RL = 8 .  
(3) VCC = 9 V, RL = 16 .  
RL = .  
Fig.5 Iq as a function of VCC  
.
Fig.6 THD as a function of Po.  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
MGD879  
MGK409  
10  
20  
handbook, halfpage  
handbook, halfpage  
SVRR  
(dB)  
THD  
(%)  
40  
1
(1)  
(1)  
(3)  
(2)  
(3)  
(2)  
1  
10  
60  
2  
80  
10  
2
3
4
5
2
3
5
4
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
f (Hz)  
f (Hz)  
Po = 0.5 W, Gv = 20 dB.  
(1) VCC = 5 V, RL = 8 .  
(2) VCC = 7.5 V, RL = 8 .  
(3) VCC = 9 V, RL = 16 .  
VCC = 5 V, 8 , Rs = 0 , Vr = 100 mV.  
(1) Gv = 30 dB.  
(2) Gv = 20 dB.  
(3) Gv = 6 dB.  
Fig.7 THD as a function of frequency.  
Fig.8 SVRR as a function of frequency.  
MGK406  
MGK405  
2
2.5  
handbook, halfpage  
handbook, halfpage  
P
o
P
(W)  
2
(W)  
1.5  
1
(1)  
(2)  
1.5  
1
(1)  
(2)  
(3)  
(3)  
0.5  
0.5  
0
0
0
0
4
8
12  
4
8
12  
V
(V)  
V
(V)  
CC  
CC  
THD = 10%.  
(1) RL = 8 .  
(2) RL = 16 .  
(3) RL = 25 .  
(1) RL = 8 .  
(2) RL = 16 .  
(3) RL = 25 .  
Fig.10 Worst case power dissipation as a function  
of VCC  
Fig.9 Po as a function of VCC  
.
.
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
MGK407  
MGD883  
2
10  
o
handbook, halfpage  
handbook, halfpage  
V
P
(W)  
(V)  
1
(3)  
(1)  
1.6  
1  
10  
1.2  
0.8  
0.4  
0
2  
10  
(1)  
(2) (3)  
3  
10  
(2)  
4  
10  
5  
10  
6  
10  
1  
2
10  
1
10  
10  
0
0.5  
1
1.5  
2
2.5  
V
(V)  
P
(W)  
ms  
o
Sine wave of 1 kHz.  
Band-pass = 22 Hz to 22 kHz.  
(1) VCC = 3 V.  
(1) VCC = 9 V, RL = 16 .  
(2) VCC = 5 V, RL = 8 .  
(3) VCC = 7.5 V, RL = 8 .  
(2) VCC = 5 V.  
(3) VCC = 12 V.  
Fig.11 P as a function of Po.  
Fig.12 Vo as a function of Vms.  
MGL070  
16  
handbook, halfpage  
V
ms  
(V)  
12  
standby  
8
4
mute  
operating  
12 16  
0
0
4
8
V
(V)  
P
Fig.13 Vms as a function of VP.  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
SE APPLICATION  
V
CC  
100 µF  
R2 110 kΩ  
100 nF  
C3  
12  
C1  
R1  
+
IN  
6
5
4
3
11 kΩ  
1 µF  
+
OUT  
OUT  
IN  
11  
14  
V
TDA8543  
SVR  
470 µF  
in  
R
L
MODE  
C2  
47 µF  
13  
GND  
MGK408  
R2  
-------  
R1  
Gain =  
Fig.14 SE application.  
MGD885  
MGD884  
10  
10  
handbook, halfpage  
handbook, halfpage  
THD  
(%)  
THD  
(%)  
1
1
(1)  
(1)  
(2)  
(3)  
1  
1  
10  
10  
(2)  
(3)  
2  
2  
10  
10  
2  
1  
2
3
4
5
10  
10  
1
10  
10  
10  
10  
10  
10  
f (Hz)  
P
(W)  
o
f = 1 kHz, Gv = 20 dB.  
Po = 0.5 W, Gv = 20 dB.  
(1) VCC = 7.5 V, RL = 4 .  
(2) VCC = 9 V, RL = 8 .  
(3) VCC = 12 V, RL = 16 Ω.  
(1) VCC = 7.5 V, RL = 4 .  
(2) VCC = 9 V, RL = 8 .  
(3) VCC = 12 V, RL = 16 .  
Fig.15 THD as a function of Po.  
Fig.16 THD as a function of frequency.  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
MGD886  
MGD887  
20  
2
handbook, halfpage  
handbook, halfpage  
P
o
(W)  
1.6  
SVRR  
(dB)  
40  
(3)  
(1)  
(2)  
1.2  
0.8  
(1)  
(2)  
60  
(3)  
0.4  
80  
0
0
2
3
4
5
10  
10  
10  
10  
10  
4
8
12  
16  
f (Hz)  
V
(V)  
CC  
VCC = 7.5 V, RL = 4 , Rs = 0 , Vi = 100mV.  
(1) Gv = 24 dB.  
(1) THD = 10%, RL = 4 .  
(2) THD = 10%, RL = 8 .  
(3) THD = 10%, RL = 16 .  
(2) Gv = 20 dB.  
(3) Gv = 0 dB.  
Fig.17 SVRR as a function of frequency.  
Fig.18 Po as a function of VCC.  
MGD889  
MGD888  
1.2  
1.6  
handbook, halfpage  
handbook, halfpage  
P
(1)  
(2)  
P
(W)  
(W)  
1.2  
0.8  
0.4  
0.8  
0.4  
(3)  
(1)  
(2)  
(3)  
0
0
0
0
0.4  
0.8  
1.2  
1.6  
4
8
12  
16  
P
(W)  
V
(V)  
o
CC  
(1) RL = 4 .  
(2) RL = 8 .  
(3) RL = 16 .  
(1) VCC = 7.5 V, RL = 4 .  
(2) VCC = 12 V, RL = 16 .  
(3) VCC = 9 V, RL = 8 .  
Fig.19 Worst case power dissipation as a function  
of VCC  
Fig.20 P as a function of Po.  
.
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
a. Top view.  
10 kΩ  
10 kΩ  
MS  
16  
1
TDA8543  
IN  
1 µF  
11 kΩ  
+
OUT  
8
9
56 kΩ  
OUT  
47 µF  
100 nF  
100 µF  
+
V
P
MGK411  
b. Component side.  
Fig.21 Printed-circuit board layout (BTL and SE).  
13  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
PACKAGE OUTLINES  
DIP16: plastic dual in-line package; 16 leads (300 mil); long body  
SOT38-1  
D
M
E
A
2
A
A
1
L
c
e
w M  
Z
b
1
(e )  
1
b
16  
9
M
H
pin 1 index  
E
1
8
0
5
10 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
(1)  
Z
A
A
A
(1)  
(1)  
1
2
w
UNIT  
mm  
b
b
c
D
E
e
e
L
M
M
H
1
1
E
max.  
max.  
min.  
max.  
1.40  
1.14  
0.53  
0.38  
0.32  
0.23  
21.8  
21.4  
6.48  
6.20  
3.9  
3.4  
8.25  
7.80  
9.5  
8.3  
4.7  
0.51  
3.7  
2.54  
0.10  
7.62  
0.30  
0.254  
0.01  
2.2  
0.021  
0.015  
0.013  
0.009  
0.86  
0.84  
0.32  
0.31  
0.055  
0.045  
0.26  
0.24  
0.15  
0.13  
0.37  
0.33  
inches  
0.19  
0.020  
0.15  
0.087  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
92-10-02  
95-01-19  
SOT38-1  
050G09  
MO-001AE  
1997 Jun 12  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
SO16: plastic small outline package; 16 leads; body width 3.9 mm  
SOT109-1  
D
E
A
X
c
y
H
v
M
A
E
Z
16  
9
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
8
e
w
M
detail X  
b
p
0
2.5  
scale  
5 mm  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
10.0  
9.8  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.27  
0.050  
1.05  
0.041  
1.75  
0.25  
0.01  
0.25  
0.01  
0.25  
0.1  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.39  
0.014 0.0075 0.38  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.020  
0.028  
0.012  
inches  
0.069  
0.01 0.004  
Note  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
95-01-23  
97-05-22  
SOT109-1  
076E07S  
MS-012AC  
1997 Jun 12  
15  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
SOLDERING  
Introduction  
Several techniques exist for reflowing; for example,  
thermal conduction by heated belt. Dwell times vary  
between 50 and 300 seconds depending on heating  
method. Typical reflow temperatures range from  
215 to 250 °C.  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
Preheating is necessary to dry the paste and evaporate  
the binding agent. Preheating duration: 45 minutes at  
45 °C.  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011).  
WAVE SOLDERING  
Wave soldering techniques can be used for all SO  
packages if the following conditions are observed:  
DIP  
A double-wave (a turbulent wave with high upward  
pressure followed by a smooth laminar wave) soldering  
technique should be used.  
SOLDERING BY DIPPING OR BY WAVE  
The maximum permissible temperature of the solder is  
260 °C; solder at this temperature must not be in contact  
with the joint for more than 5 seconds. The total contact  
time of successive solder waves must not exceed  
5 seconds.  
The longitudinal axis of the package footprint must be  
parallel to the solder flow.  
The package footprint must incorporate solder thieves at  
the downstream end.  
The device may be mounted up to the seating plane, but  
the temperature of the plastic body must not exceed the  
specified maximum storage temperature (Tstg max). If the  
printed-circuit board has been pre-heated, forced cooling  
may be necessary immediately after soldering to keep the  
temperature within the permissible limit.  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Maximum permissible solder temperature is 260 °C, and  
maximum duration of package immersion in solder is  
10 seconds, if cooled to less than 150 °C within  
REPAIRING SOLDERED JOINTS  
Apply a low voltage soldering iron (less than 24 V) to the  
lead(s) of the package, below the seating plane or not  
more than 2 mm above it. If the temperature of the  
soldering iron bit is less than 300 °C it may remain in  
contact for up to 10 seconds. If the bit temperature is  
between 300 and 400 °C, contact may be up to 5 seconds.  
6 seconds. Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
REPAIRING SOLDERED JOINTS  
Fix the component by first soldering two diagonally-  
opposite end leads. Use only a low voltage soldering iron  
(less than 24 V) applied to the flat part of the lead. Contact  
time must be limited to 10 seconds at up to 300 °C. When  
using a dedicated tool, all other leads can be soldered in  
one operation within 2 to 5 seconds between  
270 and 320 °C.  
SO  
REFLOW SOLDERING  
Reflow soldering techniques are suitable for all SO  
packages.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
1997 Jun 12  
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Philips Semiconductors  
Product specification  
2 W BTL audio amplifier  
TDA8543  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1997 Jun 12  
17  
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Product specification  
2 W BTL audio amplifier  
TDA8543  
NOTES  
1997 Jun 12  
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Product specification  
2 W BTL audio amplifier  
TDA8543  
NOTES  
1997 Jun 12  
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Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
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Tel. +61 2 9805 4455, Fax. +61 2 9805 4466  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
Tel. +43 1 60 101, Fax. +43 1 60 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773  
Philippines: Philips Semiconductors Philippines Inc.,  
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Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Belgium: see The Netherlands  
Brazil: see South America  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
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Tel. +359 2 689 211, Fax. +359 2 689 102  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
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Tel. +852 2319 7888, Fax. +852 2319 7700  
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Tel. +65 350 2538, Fax. +65 251 6500  
Colombia: see South America  
Slovakia: see Austria  
Czech Republic: see Austria  
Slovenia: see Italy  
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,  
Tel. +45 32 88 2636, Fax. +45 31 57 1949  
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Tel. +27 11 470 5911, Fax. +27 11 470 5494  
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Tel. +358 9 615800, Fax. +358 9 61580/xxx  
South America: Rua do Rocio 220, 5th floor, Suite 51,  
04552-903 São Paulo, SÃO PAULO - SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 829 1849  
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427  
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Tel. +34 3 301 6312, Fax. +34 3 301 4107  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300  
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Tel. +46 8 632 2000, Fax. +46 8 632 2745  
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,  
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2686, Fax. +41 1 481 7730  
Hungary: see Austria  
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.  
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874  
Indonesia: see Singapore  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,  
Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,  
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,  
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1997  
SCA53  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
547027/50/01/pp20  
Date of release: 1997 Jun 12  
Document order number: 9397 750 02232  
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