Philips Stereo Amplifier BGA2712 User Manual

DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BGA2712  
MMIC wideband amplifier  
Product specification  
2002 Sep 10  
Supersedes data of 2002 Jan 31  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-s  
thermal resistance from junction to  
solder point  
Ptot = 200 mW; Ts 90 °C  
300  
K/W  
CHARACTERISTICS  
VS = 5 V; IS = 12.3 mA; Tj = 25 °C; unless otherwise specified.  
SYMBOL PARAMETER CONDITIONS  
IS supply current  
MIN.  
TYP.  
12.3  
MAX.  
UNIT  
9
15  
22  
22  
23  
23  
22  
21  
mA  
2
s21  
insertion power gain  
f = 100 MHz  
f = 1 GHz  
20  
20  
20  
20  
19  
16  
12  
8
20.8  
21.3  
22  
dB  
dB  
f = 1.8 GHz  
f = 2.2 GHz  
f = 2.6 GHz  
f = 3 GHz  
dB  
22  
dB  
21.2  
19.3  
14  
dB  
dB  
RL IN  
return losses input  
return losses output  
isolation  
f = 1 GHz  
dB  
f = 2.2 GHz  
f = 1 GHz  
10  
dB  
RL OUT  
17  
15  
31  
36  
20  
dB  
f = 2.2 GHz  
f = 1.6 GHz  
f = 2.2 GHz  
f = 1 GHz  
18  
dB  
2
s12  
33  
dB  
39  
dB  
NF  
noise figure  
3.9  
4.3  
3.2  
2
4.3  
4.7  
dB  
f = 2.2 GHz  
dB  
BW  
K
bandwidth  
at s21 2 3 dB below flat gain at 1 GHz 2.8  
f = 1 GHz  
GHz  
stability factor  
1.5  
2.5  
3
f = 2.2 GHz  
3
PL(sat)  
PL 1 dB  
IP3(in)  
IP3(out)  
saturated load power f = 1 GHz  
f = 2.2 GHz  
4.8  
1.3  
0.2  
2  
10  
16  
11  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
0
load power  
at 1 dB gain compression; f = 1 GHz  
2  
4  
12  
14  
9
at 1 dB gain compression; f = 2.2 GHz  
input intercept point  
f = 1 GHz  
f = 2.2 GHz  
output intercept point f = 1 GHz  
f = 2.2 GHz  
4
6
2002 Sep 10  
3
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
APPLICATION INFORMATION  
Figure 2 shows a typical application circuit for the  
BGA2712 MMIC. The device is internally matched to 50 ,  
and therefore does not need any external matching. The  
value of the input and output DC blocking capacitors C2  
and C3 should not be more than 100 pF for applications  
above 100 MHz. However, when the device is operated  
below 100 MHz, the capacitor value should be increased.  
DC-block  
100 pF  
DC-block  
100 pF  
DC-block  
100 pF  
handbook, halfpage  
input  
output  
MGU437  
The 22 nF supply decoupling capacitor C1 should be  
located as closely as possible to the MMIC.  
Fig.3 Easy cascading application circuit.  
Separate paths must be used for the ground planes of the  
ground pins GND1 and GND2, and these paths must be as  
short as possible. When using vias, use multiple vias per  
pin in order to limit ground path inductance.  
mixer  
handbook, halfpage  
from RF  
circuit  
to IF circuit  
or demodulator  
wideband  
amplifier  
MGU438  
V
handbook, halfpage  
s
oscillator  
C1  
V
s
Fig.4 Application as IF amplifier.  
RF in  
RF out  
RF input  
RF output  
C2  
C3  
GND1  
GND2  
MGU435  
mixer  
handbook, halfpage  
antenna  
to IF circuit  
or demodulator  
Fig.2 Typical application circuit.  
LNA  
wideband  
amplifier  
MGU439  
oscillator  
Figure 3 shows two cascaded MMICs. This configuration  
doubles overall gain while preserving broadband  
characteristics. Supply decoupling and grounding  
conditions for each MMIC are the same as those for the  
circuit of Fig.2.  
Fig.5 Application as RF amplifier.  
The excellent wideband characteristics of the MMIC make  
it an ideal building block in IF amplifier applications such  
as LBNs (see Fig.4).  
mixer  
handbook, halfpage  
from modulation  
or IF circuit  
to power  
amplifier  
As a buffer amplifier between an LNA and a mixer in a  
receiver circuit, the MMIC offers an easy matching, low  
noise solution (see Fig.5).  
wideband  
amplifier  
MGU440  
oscillator  
In Fig.6 the MMIC is used as a driver to the power amplifier  
as part of a transmitter circuit. Good linear performance  
and matched input and output offer quick design solutions  
in such applications.  
Fig.6 Application as driver amplifier.  
2002 Sep 10  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+1  
135°  
45°  
+2  
+0.5  
+0.2  
+5  
100 MHz  
4 GHz  
0.2  
0.5  
2
5
180°  
0
0°  
5  
0.2  
0.5  
2  
45°  
135°  
1  
MLD904  
1.0  
90°  
IS = 12.3 mA; VS = 5 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.7 Input reflection coefficient (s11); typical values.  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+1  
135°  
45°  
+2  
+0.5  
+0.2  
+5  
4 GHz  
0.2  
0.5  
2
5
180°  
0
0°  
100 MHz  
5  
0.2  
0.5  
2  
45°  
135°  
1  
90°  
MLD905  
1.0  
IS = 12.3 mA; VS = 5 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.8 Output reflection coefficient (s22); typical values.  
5
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Product specification  
MMIC wideband amplifier  
BGA2712  
MLD906  
MLD907  
0
25  
handbook, halfpage  
handbook, halfpage  
2
s
12  
(dB)  
2
s
21  
10  
(dB)  
20  
20  
(1)  
(2)  
30  
15  
(3)  
40  
10  
0
50  
0
1000  
2000  
3000  
4000  
1000  
2000  
3000  
4000  
f (MHz)  
f (MHz)  
PD = 30 dBm; ZO = 50 Ω.  
(1) IS = 15.1 mA; VS = 5.5 V.  
(2) IS = 12.3 mA; VS = 5 V.  
(3) IS = 10.1 mA; VS = 4.5 V.  
IS = 12.3 mA; VS = 5 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.9 Isolation ( s12 2) as a function of frequency;  
typical values.  
Fig.10 Insertion gain ( s21 2) as a function of  
frequency; typical values.  
MLD908  
MLD909  
10  
10  
handbook, halfpage  
handbook, halfpage  
P
L
P
L
(dBm)  
(dBm)  
(1)  
5
5
(2)  
(1)  
(2)  
(3)  
0
0
(3)  
5  
5  
10  
10  
30  
20  
10  
0
30  
20  
10  
0
P
(dBm)  
P
(dBm)  
D
D
f = 1 GHz; ZO = 50 Ω.  
(1) VS = 5.5 V.  
(2) VS = 5 V.  
f = 2.2 GHz; ZO = 50 Ω.  
(1) VS = 5.5 V.  
(2) VS = 5 V.  
(3) VS = 4.5 V.  
(3) VS = 4.5 V.  
Fig.11 Load power as a function of drive power at  
1 GHz; typical values.  
Fig.12 Load power as a function of drive power at  
2.2 GHz; typical values.  
2002 Sep 10  
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Product specification  
MMIC wideband amplifier  
BGA2712  
MLD903  
MLD902  
6
10  
handbook, halfpage  
handbook, halfpage  
NF  
K
8
(dB)  
5
6
4
(1)  
(3)  
4
(2)  
3
2
2
0
0
0
1000  
2000  
3000  
1000  
2000  
3000  
4000  
f (MHz)  
f (MHz)  
ZO = 50 Ω.  
(1) IS = 15.1 mA; VS = 5.5 V.  
(2) S = 12.3 mA; VS = 5 V.  
(3) IS = 10.1 mA; VS = 4.5 V.  
I
IS = 12.3 mA; VS = 5 V; ZO = 50 Ω.  
Fig.13 Noise figure as a function of frequency;  
typical values.  
Fig.14 Stability factor as a function of frequency;  
typical values.  
2002 Sep 10  
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Scattering parameters  
VS = 5 V; IS = 12.3 mA; PD = 30 dBm; ZO = 50 ; Tamb = 25 °C;  
s11  
s21  
s12  
MAGNITUDE  
s22  
MAGNITUDE  
K-  
FACTOR  
f (MHz)  
MAGNITUDE  
ANGLE  
(deg)  
MAGNITUDE  
ANGLE  
(deg)  
ANGLE  
(deg)  
ANGLE  
(deg)  
(ratio)  
(ratio)  
(ratio)  
(ratio)  
100  
200  
0.04752  
0.05643  
0.09546  
0.13547  
0.17466  
0.20739  
0.24036  
0.26469  
0.29368  
0.31261  
0.31986  
0.32544  
0.31554  
0.29374  
0.26599  
0.21222  
0.17076  
0.14479  
0.11730  
0.08946  
0.06606  
13.48  
22.73  
10.9826  
11.0172  
11.0842  
11.1812  
11.3239  
11.5760  
11.8439  
12.1222  
12.3892  
12.5808  
12.6359  
12.4802  
12.2649  
11.5087  
10.4126  
9.17830  
8.12024  
7.38827  
6.96284  
6.62125  
6.32249  
1.753  
6.898  
15.64  
24.08  
32.64  
41.38  
50.97  
61.14  
72.07  
83.89  
96.79  
110.7  
125.2  
139.8  
152.8  
163.8  
171.0  
176.5  
177.3  
0.03355  
0.03308  
0.03111  
0.02829  
0.02501  
0.02145  
0.01788  
0.01489  
0.01262  
0.01132  
0.01102  
0.01151  
0.01238  
0.01322  
0.01362  
0.01335  
0.01239  
0.01150  
0.01108  
0.01107  
0.01178  
2.342  
7.340  
15.47  
21.84  
26.57  
30.44  
31.20  
28.60  
22.41  
12.86  
2.369  
5.585  
0.07706  
0.07237  
0.07314  
0.07471  
0.08218  
0.10113  
0.11792  
0.13314  
0.14376  
0.14606  
0.13749  
0.11928  
0.08992  
0.05626  
0.02424  
0.02731  
0.04752  
0.06279  
0.07643  
0.09760  
0.12925  
170.0  
164.8  
130.7  
101.8  
72.30  
47.04  
25.82  
10.96  
1.624  
13.51  
24.90  
37.21  
51.50  
68.53  
110.2  
159.1  
135.0  
132.1  
142.1  
153.5  
160.6  
1.5  
1.5  
1.6  
1.7  
1.9  
2.0  
2.3  
2.6  
3.0  
3.2  
3.2  
3.1  
3.0  
3.1  
3.3  
4.0  
4.9  
5.8  
6.4  
6.7  
6.6  
400  
39.62  
600  
37.16  
800  
32.62  
1000  
1200  
1400  
1600  
1800  
2000  
2200  
2400  
2600  
2800  
3000  
3200  
3400  
3600  
3800  
4000  
27.40  
23.23  
18.36  
13.54  
8.127  
1.984  
4.878  
13.05  
21.53  
28.39  
31.80  
31.52  
32.14  
35.25  
46.06  
64.65  
9.990  
11.44  
10.70  
9.622  
10.22  
15.36  
19.97  
171.3  
27.62  
165.6  
34.46  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
PACKAGE OUTLINE  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M
B
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
2002 Sep 10  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2002 Sep 10  
10  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
NOTES  
2002 Sep 10  
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Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: [email protected].  
© Koninklijke Philips Electronics N.V. 2002  
SCA74  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613516/02/pp12  
Date of release: 2002 Sep 10  
Document order number: 9397 750 10022  
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