Panasonic Switch MA6Z718 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).  
Schottky Barrier Diodes (SBD)  
MA6Z718 (MA6S718)  
Silicon epitaxial planar type  
Unit: mm  
2.0 0.1  
For switching  
0.7 0.1  
(0.65)(0.65)  
6
5
4
Features  
Three isolated elements are contained in one package, allowing  
high-density mounting  
1
2
3
Forward voltage VF , optimum for low voltage rectification  
Optimum for high frequency rectification because of its short  
reverse recovery time trr  
+0.10  
0.2 0.05  
0.16  
–0.06  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage  
Symbol  
VR  
Rating  
Unit  
V
1: Anode 1  
2: Anode 2  
3: Anode 3  
EIAJ: SC-88  
4: Cathode 3  
5: Cathode 2  
6: Cathode 1  
30  
30  
Maximum peak reverse voltage  
Peak forward current *  
Forward current *  
VRM  
IFM  
V
SMini6-F1 Package  
150  
mA  
mA  
°C  
Marking Symbol: M2N  
Internal Connection  
IF  
30  
Junction temperature  
Storage temperature  
Tj  
125  
Tstg  
55 to +125  
°C  
6
5
4
Note) : Value for single diode  
*
1
2
3
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Forward voltage  
Symbol  
VF1  
VF2  
IR  
Conditions  
Min  
Typ  
Max  
0.4  
1.0  
1
Unit  
IF = 1 mA  
V
IF = 30 mA  
Reverse current  
VR = 30 V  
µA  
pF  
ns  
Terminal capacitance  
Reverse recovery time *  
Ct  
VR = 1 V, f = 1 MHz  
1.5  
1.0  
trr  
IF = IR = 10 mA  
Irr = 1 mA, RL = 100 Ω  
Detection efficiency  
η
VIN = 3 V(peak) , f = 30 MHz  
65  
%
RL = 3.9 k, CL = 10 pF  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
 
3. Absolute frequency of input and output is 2 GHz.  
4. : trr measurement circuit  
*
Bias Application Unit (N-50BU)  
Input Pulse  
Output Pulse  
tp  
tr  
t
10%  
90%  
trr  
IF  
t
A
VR  
Irr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
IR = 10 mA  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
RL = 100 Ω  
Rs = 50 Ω  
Ri = 50 Ω  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: April 2004  
SKH00114BED  
1
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Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  
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