This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1823G
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Package
•
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
• Low noise voltage NV
Code
SMini3-F2
Marking Symbol: 1Z
Pin Name
•
•
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
1: Base
2: Emitter
3: Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
50
40
15
V
V
50
mA
mA
mW
°C
Peak collector current
ICP
100
Collector power dissipation
Junction temperature
PC
150
Tj
150
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
40
V
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 20 V, IB = 0
VCE = 10 V, IC = 2 mA
15
V
0.1
1
µA
µA
ICEO
hFE
400
2000
0.20
VCE(sat) IC = 10 mA, IB = 1 mA
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
0.05
120
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
T
hFE
400 to 800
600 to 1 200 1000 to 2000
Publication date: May 2007
SJC00375AED
1
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This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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semiconductors described in this book
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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