This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2084
Silicon PNP epitaxial planar type
Unit: mm
For general amplification
+0.10
–0.05
0.40
3
+0.10
–0.06
0.16
■ Features
• High collector-emitter voltage (Base open) VCEO
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
1
2
(0.95) (0.95)
■ Absolute Maximum Ratings Ta = 25°C
1.9 0.1
+0.20
2.90
–0.05
Parameter
Symbol
Rating
−300
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
10˚
−300
V
−5
V
1: Base
2: Emitter
3: Collector
Collector current
IC
ICP
PC
Tj
−70
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
−100
EIAJ: SC-59
Mini3-G1 Package
200
150
Marking Symbol: 7N
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCEO
VEBO
hFE
Conditions
Min
−300
−5
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
IC = −100 µA, IB = 0
IE = −1 µA, , IC = 0
V
VCE = −10 V, IC = −5 mA
30
150
V
VCE(sat) IC = −10 mA, IB = −1 mA
− 0.6
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
7
pF
(Common base, input open circuited)
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
50
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
P
Q
hFE
30 to 100
60 to 150
Publication date: January 2003
SJC00286AED
1
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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