CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
18-Mbit QDR™-II SRAM 2-Word
Burst Architecture
Features
Functional Description
■ Separate independent read and write data ports
❐ Supports concurrent transactions
The CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and
CY7C1314BV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has data outputs to
support read operations and the write port has data inputs to
support write operations. QDR-II architecture has separate data
inputs and data outputs to completely eliminate the need to
“turn-around” the data bus required with common IO devices.
Access to each port is accomplished through a common address
bus. The read address is latched on the rising edge of the K clock
and the write address is latched on the rising edge of the K clock.
Accesses to the QDR-II read and write ports are completely
independent of one another. To maximize data throughput, both
read and write ports are provided with DDR interfaces. Each
address location is associated with two 8-bit words
(CY7C1310BV18), 9-bit words (CY7C1910BV18), 18-bit words
(CY7C1312BV18), or 36-bit words (CY7C1314BV18) that burst
sequentially into or out of the device. Because data can be trans-
ferred into and out of the device on every rising edge of both input
clocks (K and K and C and C), memory bandwidth is maximized
while simplifying system design by eliminating bus
“turn-arounds”.
■ 250 MHz clock for high bandwidth
■ 2-word burst on all accesses
■ DoubleDataRate(DDR)interfacesonbothreadandwriteports
(data transferred at 500 MHz) at 250 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Single multiplexed address input bus latches address inputs
for both read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ Available in x8, x9, x18, and x36 configurations
■ Full data coherency, providing most current data
■ Core V = 1.8V (±0.1V); IO V
= 1.4V to V
DD
DD
DDQ
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Variable drive HSTL output buffers
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1310BV18 – 2M x 8
CY7C1910BV18 – 2M x 9
CY7C1312BV18 – 1M x 18
CY7C1314BV18 – 512K x 36
Selection Guide
Description
250 MHz
250
200 MHz
200
167 MHz
167
Unit
MHz
mA
Maximum Operating Frequency
Maximum Operating Current
x8
x9
735
630
550
735
630
550
x18
x36
800
675
600
900
750
650
Cypress Semiconductor Corporation
Document #: 38-05619 Rev. *F
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 2, 2008
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Logic Block Diagram (CY7C1312BV18)
18
D
[17:0]
Write
Reg
Write
Reg
19
Address
Register
A
(18:0)
19
Address
Register
A
(18:0)
RPS
K
K
Control
Logic
CLK
Gen.
C
C
DOFF
Read Data Reg.
CQ
CQ
36
18
V
REF
18
18
Reg.
Reg.
Reg.
Control
Logic
WPS
BWS
18
18
Q
[17:0]
[1:0]
Logic Block Diagram (CY7C1314BV18)
36
D
[35:0]
Write
Reg
Write
Reg
18
Address
Register
A
(17:0)
18
Address
Register
A
(17:0)
RPS
K
K
Control
Logic
CLK
Gen.
C
C
DOFF
Read Data Reg.
CQ
CQ
72
36
V
REF
36
36
Reg.
Reg.
Reg.
Control
Logic
WPS
BWS
36
36
Q
[35:0]
[3:0]
Document #: 38-05619 Rev. *F
Page 3 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Pin Configuration
The pin configuration for CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and CY7C1314BV18 follow.
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1310BV18 (2M x 8)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
NC/72M
NC
3
4
WPS
A
5
6
K
K
A
7
8
RPS
A
9
10
NC/36M
NC
11
CQ
Q3
D3
NC
Q2
NC
NC
ZQ
D1
NC
Q0
D0
NC
NC
TDI
A
B
C
D
E
F
A
NWS
NC/144M
A
1
NC
NC
NC
Q4
NC
Q5
NC/288M
A
NWS
A
NC
NC
NC
NC
NC
NC
0
NC
V
V
V
V
NC
SS
SS
SS
SS
D4
V
V
V
V
V
NC
SS
SS
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D2
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
NC
V
V
V
V
V
V
V
V
V
V
NC
G
H
J
D5
NC
V
V
V
V
REF
REF
DDQ
DDQ
NC
NC
Q6
NC
NC
Q1
NC
NC
NC
NC
NC
TMS
K
L
NC
D6
NC
NC
Q7
A
NC
NC
NC
NC
NC
A
V
V
V
V
SS
SS
SS
SS
M
N
P
R
NC
D7
V
V
SS
SS
SS
V
A
A
A
A
C
C
A
A
A
V
SS
NC
TCK
A
A
A
A
CY7C1910BV18 (2M x 9)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
NC/72M
NC
3
4
5
NC
6
K
K
A
7
8
9
10
NC/36M
NC
11
CQ
Q4
D4
NC
Q3
NC
NC
ZQ
D2
NC
Q1
D1
NC
Q0
TDI
A
B
C
D
E
F
A
WPS
A
NC/144M
RPS
A
A
NC
NC
NC
Q5
NC
Q6
NC/288M
A
BWS
A
NC
NC
NC
NC
NC
NC
0
NC
V
V
V
V
NC
SS
SS
SS
SS
D5
V
V
V
V
V
NC
SS
SS
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D3
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
NC
V
V
V
V
V
V
V
V
V
V
NC
G
H
J
D6
NC
V
V
V
V
REF
REF
DDQ
DDQ
NC
NC
Q7
NC
NC
Q2
NC
NC
NC
NC
D0
K
L
NC
D7
NC
NC
Q8
A
NC
NC
NC
NC
NC
A
V
V
SS
SS
SS
SS
M
N
P
R
NC
D8
V
V
V
V
SS
SS
SS
V
A
A
A
A
C
C
A
A
A
V
SS
NC
TCK
A
A
A
A
TMS
Note
1. NC/36M, NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level.
Document #: 38-05619 Rev. *F
Page 4 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Pin Configuration (continued)
[1]
The pin configuration for CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and CY7C1314BV18 follow.
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1312BV18 (1M x 18)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
3
4
WPS
A
5
BWS
NC
A
6
K
K
A
7
8
RPS
A
9
10
NC/72M
NC
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
NC/144M NC/36M
NC/288M
A
1
Q9
NC
D9
BWS
A
NC
NC
NC
NC
NC
NC
0
D10
Q10
Q11
D12
Q13
V
V
V
V
Q7
SS
SS
SS
SS
D11
NC
V
V
V
V
V
NC
SS
SS
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D6
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Q12
D13
V
V
V
V
V
V
V
V
V
V
NC
G
H
J
NC
V
V
V
V
REF
REF
DDQ
DDQ
NC
D14
NC
Q4
D3
K
L
NC
Q15
NC
Q14
D15
D16
Q16
Q17
A
NC
NC
NC
NC
NC
A
V
V
V
V
NC
Q1
SS
SS
SS
SS
M
N
P
R
V
V
SS
SS
SS
D17
NC
V
A
A
A
A
C
C
A
A
A
V
NC
D0
SS
A
A
A
A
TCK
TMS
CY7C1314BV18 (512K x 36)
1
2
3
4
5
BWS
BWS
A
6
K
K
A
7
BWS
BWS
A
8
9
10
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
CQ
NC/288M NC/72M
WPS
A
RPS
A
NC/36M NC/144M
2
3
1
0
Q27
D27
D28
Q29
Q30
D30
DOFF
D31
Q32
Q33
D33
D34
Q35
TDO
Q18
Q28
D20
D29
Q21
D22
D18
D19
Q19
Q20
D21
Q22
D17
D16
Q16
Q15
D14
Q13
Q17
Q7
V
V
V
V
SS
SS
SS
SS
V
V
V
V
V
D15
D6
SS
SS
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
V
V
V
V
V
V
V
V
V
V
Q14
D13
G
H
J
V
V
V
V
REF
REF
DDQ
DDQ
Q31
D23
D12
Q4
K
L
D32
Q24
Q34
D26
D35
TCK
Q23
D24
D25
Q25
Q26
A
Q12
D11
D10
Q10
Q9
D3
Q11
Q1
V
V
SS
SS
SS
SS
M
N
P
R
V
V
V
V
SS
SS
SS
V
A
A
A
A
C
C
A
A
A
V
D9
SS
A
A
A
A
D0
A
TMS
Document #: 38-05619 Rev. *F
Page 5 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Pin Definitions
Pin Name
IO
Pin Description
D
Input-
Synchronous
Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations.
[x:0]
CY7C1310BV18 - D
[7:0]
CY7C1910BV18 - D
CY7C1312BV18 - D
CY7C1314BV18 - D
[8:0]
[17:0]
[35:0]
WPS
Input-
Synchronous
Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a
write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D
.
[x:0]
NWS ,
Nibble Write Select 0, 1 − Active LOW (CY7C1310BV18 Only). Sampled on the rising edge of the K
and K clocks during Write operations. Used to select which nibble is written into the device during the
0
NWS
1
current portion of the Write operations.Nibbles not written remain unaltered. NWS controls D
and
0
[3:0]
NWS controls D
.
1
[7:4]
All Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select
ignores the corresponding nibble of data and it is not written into the device.
BWS ,
Input-
Synchronous
Byte Write Select 0, 1, 2 and 3 − Active LOW. Sampled on the rising edge of the K and K clocks during
write operations. Used to select which byte is written into the device during the current portion of the write
operations. Bytes not written remain unaltered.
0
BWS ,
1
BWS ,
2
CY7C1910BV18 − BWS controls D
BWS
0
[8:0]
3
CY7C1312BV18 − BWS controls D
, BWS controls D
, BWS controls D
.
[17:9]
0
[8:0]
1
CY7C1314BV18 − BWS controls D
[35:27].
,BWS controls D
and BWS controls
[26:18]
0
[8:0]
1
[17:9]
2
3
D
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
A
Input-
Synchronous
Address Inputs. Sampled on the rising edge of the K (Read address) and K (Write address) clocks during
active read and write operations. These address inputs are multiplexed for both read and write operations.
Internally, the device is organized as 2M x 8 (2 arrays each of 1M x 8) for CY7C1310BV18, 2M x 9 (2
arrays each of 1M x 9) for CY7C1910BV18, 1M x 18 (2 arrays each of 512K x 18) for CY7C1312BV18
and 512K x 36 (2 arrays each of 256K x 36) for CY7C1314BV18. Therefore, only 20 address inputs are
needed to access the entire memory array of CY7C1310BV18 and CY7C1910BV18, 19 address inputs
for CY7C1312BV18 and 18 address inputs for CY7C1314BV18. These inputs are ignored when the
appropriate port is deselected.
Q
Outputs-
Synchronous
Data Output Signals. These pins drive out the requested data during a read operation. Valid data is
driven out on the rising edge of both the C and C clocks during read operations, or K and K when in single
[x:0]
clock mode. When the read port is deselected, Q
are automatically tri-stated.
[x:0]
CY7C1310BV18 − Q
[7:0]
CY7C1910BV18 − Q
[8:0]
CY7C1312BV18 − Q
[17:0]
CY7C1314BV18 − Q
[35:0]
RPS
C
Input-
Synchronous
Read Port Select − Active LOW. Sampled on the rising edge of positive input clock (K). When active, a
read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is
allowed to complete and the output drivers are automatically tri-stated following the next rising edge of
the C clock. Each read access consists of a burst of two sequential transfers.
Input Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
C
K
K
Input Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q
edge of K.
when in single clock mode. All accesses are initiated on the rising
[x:0]
Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q when in single clock mode.
[x:0]
Document #: 38-05619 Rev. *F
Page 6 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Pin Definitions (continued)
Pin Name
IO
Pin Description
CQ
Echo Clock CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock
for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings
CQ
ZQ
Echo Clock CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock
for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus
impedance. CQ, CQ, and Q output impedance are set to 0.2 x RQ, where RQ is a resistor connected
[x:0]
between ZQ and ground. Alternatively, this pin can be connected directly to V
, which enables the
DDQ
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing
in the DLL turned off operation differs from those listed in this data sheet.
TDO
Output
Input
Input
Input
N/A
TDO for JTAG.
TCK
TCK Pin for JTAG.
TDI
TDI Pin for JTAG.
TMS
TMS Pin for JTAG.
NC
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
NC/36M
NC/72M
NC/144M
NC/288M
N/A
N/A
N/A
N/A
V
Input-
Reference
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, Outputs, and AC
measurement points.
REF
V
V
V
Power Supply Power Supply Inputs to the Core of the Device.
Ground Ground for the Device.
Power Supply Power Supply Inputs for the Outputs of the Device.
DD
SS
DDQ
Document #: 38-05619 Rev. *F
Page 7 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Write Operations
Functional Overview
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the same K clock
The CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and
CY7C1314BV18 are synchronous pipelined Burst SRAMs
equipped with a read port and a write port. The read port is
dedicated to read operations and the write port is dedicated to
write operations. Data flows into the SRAM through the write port
and flows out through the read port. These devices multiplex the
address inputs to minimize the number of address pins required.
By having separate read and write ports, the QDR-II completely
eliminates the need to turn-around the data bus and avoids any
possible data contention, thereby simplifying system design.
Each access consists of two 8-bit data transfers in the case of
CY7C1310BV18, two 9-bit data transfers in the case of
CY7C1910BV18, two 18-bit data transfers in the case of
CY7C1312BV18, and two 36-bit data transfers in the case of
CY7C1314BV18 in one clock cycle.
rise, the data presented to D
is latched and stored into the
[17:0]
lower 18-bit write data register, provided BWS
are both
[1:0]
asserted active. On the subsequent rising edge of the negative
input clock (K), the address is latched and the information
presented to D
is stored into the write data register, provided
[17:0]
BWS
are both asserted active. The 36 bits of data are then
[1:0]
written into the memory array at the specified location. When
deselected, the write port ignores all inputs after completion of
pending write operations.
Byte Write Operations
Byte write operations are supported by the CY7C1312BV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS and
0
Accesses for both ports are initiated on the rising edge of the
positive input clock (K). All synchronous input timing is
referenced from the rising edge of the input clocks (K and K) and
all output timing is referenced to the rising edge of the output
clocks (C and C, or K and K when in single clock mode).
BWS , which are sampled with each 18-bit data word. Asserting
1
the appropriate Byte Write Select input during the data portion of
a write latches the data being presented and writes it into the
device. Deasserting the Byte Write Select input during the data
portion of a write allows the data stored in the device for that byte
to remain unaltered. This feature can be used to simplify read,
modify, or write operations to a byte write operation.
All synchronous data inputs (D
) pass through input registers
[x:0]
controlled by the input clocks (K and K). All synchronous data
outputs (Q ) pass through output registers controlled by the
[x:0]
Single Clock Mode
rising edge of the output clocks (C and C, or K and K when in
single clock mode).
The CY7C1312BV18 can be used with a single clock that
controls both the input and output registers. In this mode, the
device recognizes only a single pair of input clocks (K and K) that
control both the input and output registers. This operation is
identical to the operation if the device had zero skew between
the K/K and C/C clocks. All timing parameters remain the same
in this mode. To use this mode of operation, the user must tie C
and C HIGH at power on. This function is a strap option and not
alterable during device operation.
All synchronous control (RPS, WPS, BWS
) inputs pass
[x:0]
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1312BV18 is described in the following sections. The
same basic descriptions apply to CY7C1310BV18,
CY7C1910BV18, and CY7C1314BV18.
Read Operations
Concurrent Transactions
The CY7C1312BV18 is organized internally as two arrays of
512K x 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the positive input clock (K). The
address is latched on the rising edge of the K clock. The address
presented to the address inputs is stored in the read address
register. Following the next K clock rise the corresponding lowest
The read and write ports on the CY7C1312BV18 operate
independently of one another. As each port latches the address
inputs on different clock edges, the user can read or write to any
location, regardless of the transaction on the other port. The user
can start reads and writes in the same clock cycle. If the ports
access the same location at the same time, the SRAM delivers
the most recent information associated with the specified
address location. This includes forwarding data from a write
cycle that was initiated on the previous K clock rise.
order 18-bit word of data is driven onto the Q
using C as the
[17:0]
output timing reference. On the subsequent rising edge of C, the
next 18-bit data word is driven onto the Q . The requested
[17:0]
data is valid 0.45 ns from the rising edge of the output clock (C
and C or K and K when in single clock mode).
Depth Expansion
The CY7C1312BV18 has a port select input for each port. This
enables for easy depth expansion. Both port selects are sampled
on the rising edge of the positive input clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) are completed prior to the device being deselected.
Synchronous internal circuitry automatically tri-states the outputs
following the next rising edge of the output clocks (C/C). This
allows for a seamless transition between devices without the
insertion of wait states in a depth expanded memory.
Document #: 38-05619 Rev. *F
Page 8 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
synchronized to the output clock (C/C) of the QDR-II. In single
clock mode, CQ is generated with respect to K and CQ is
generated with respect to K. The timing for the echo clocks is
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and V to allow the SRAM to adjust its output
SS
driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
DLL
These chips use a Delay Lock Loop (DLL) that is designed to
function between 120 MHz and the specified maximum clock
frequency. During power up, when the DOFF is tied HIGH, the
DLL is locked after 1024 cycles of stable clock. The DLL can also
be reset by slowing or stopping the input clock K and K for a
minimum of 30 ns. However, it is not necessary to reset the DLL
to lock to the desired frequency. The DLL automatically locks
1024 clock cycles after a stable clock is presented. The DLL may
be disabled by applying ground to the DOFF pin. For information
refer to the application note AN5062, DLL Considerations in
of ±15% is between 175Ω and 350Ω, with V
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
= 1.5V. The
DDQ
Echo Clocks
Echo clocks are provided on the QDR-II to simplify data capture
on high-speed systems. Two echo clocks are generated by the
QDR-II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free-running clocks and are
Application Example
Figure 1 shows two QDR-II used in an application.
Figure 1. Application Example
SRAM #1
R = 250ohms
SRAM #2
R = 250ohms
ZQ
CQ/CQ#
Q
ZQ
CQ/CQ#
Q
R W
B
R W
B
W
S
Vt
P
S
#
P
S
#
W
S
#
P
S
#
P
S
#
D
A
D
A
R
C
C#
K
K#
C
C#
K
K#
#
DATA IN
DATA OUT
Address
Vt
Vt
R
RPS#
BUS
MASTER
(CPU
or
WPS#
BWS#
CLKIN/CLKIN#
Source K
Source K#
ASIC)
Delayed K
Delayed K#
R
R = 50ohms
Vt = Vddq/2
Document #: 38-05619 Rev. *F
Page 9 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Truth Table
The truth table for CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and CY7C1314BV18 follows.
Operation
K
RPS WPS
DQ
DQ
Write Cycle:
Load address on the rising edge of K;
input write data on K and K rising edges.
L-H
X
L
L
D(A + 0) at K(t) ↑
D(A + 1) at K(t) ↑
Read Cycle:
L-H
X
Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑
Load address on the rising edge of K;
wait one and a half cycle; read data on C and C rising edges.
NOP: No Operation
L-H
H
X
H
X
D = X
Q = High-Z
D = X
Q = High-Z
Standby: Clock Stopped
Stopped
Previous State
Previous State
Write Cycle Descriptions
The write cycle description table for CY7C1310BV18 and CY7C1312BV18 follows.
BWS / BWS /
0
1
K
Comments
K
NWS
NWS
1
0
L
L
L
L
L–H
–
During the data portion of a write sequence:
CY7C1310BV18 − both nibbles (D
) are written into the device.
[7:0]
CY7C1312BV18 − both bytes (D
) are written into the device.
[17:0]
–
L–H
–
L-H During the data portion of a write sequence:
CY7C1310BV18 − both nibbles (D
) are written into the device.
) are written into the device.
[7:0]
CY7C1312BV18 − both bytes (D
[17:0]
L
H
H
L
–
During the data portion of a write sequence:
CY7C1310BV18 − only the lower nibble (D
) is written into the device, D
) is written into the device, D
remains unaltered.
remains unaltered.
[17:9]
[3:0]
[7:4]
CY7C1312BV18 − only the lower byte (D
[8:0]
L
L–H During the data portion of a write sequence:
CY7C1310BV18 − only the lower nibble (D
) is written into the device, D
) is written into the device, D
remains unaltered.
remains unaltered.
[3:0]
[7:4]
CY7C1312BV18 − only the lower byte (D
[8:0]
[17:9]
H
H
L–H
–
–
During the data portion of a write sequence:
CY7C1310BV18 − only the upper nibble (D
) is written into the device, D
) is written into the device, D
remains unaltered.
[3:0]
[7:4]
CY7C1312BV18 − only the upper byte (D
remains unaltered.
[17:9]
[8:0]
L
L–H During the data portion of a write sequence:
CY7C1310BV18 − only the upper nibble (D
) is written into the device, D
) is written into the device, D
remains unaltered.
remains unaltered.
[7:4]
[3:0]
[8:0]
CY7C1312BV18 − only the upper byte (D
[17:9]
H
H
H
H
L–H
–
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge.
3. Device powers up deselected with the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS , NWS , BWS , BWS , BWS and BWS can be altered on
0
1
0
1
2,
3
different portions of a write cycle, as long as the setup and hold requirements are achieved.
Document #: 38-05619 Rev. *F
Page 10 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Write Cycle Descriptions
The write cycle description table for CY7C1910BV18 follows.
BWS
K
L–H
–
K
Comments
0
L
L
–
During the data portion of a write sequence, the single byte (D
) is written into the device.
) is written into the device.
[8:0]
L–H During the data portion of a write sequence, the single byte (D
[8:0]
H
H
L–H
–
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1314BV18 follows.
BWS
BWS
BWS
BWS
3
K
K
Comments
0
1
2
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D
the device.
) are written into
) are written into
[35:0]
L
L
L
H
H
L
L
H
H
H
H
L
L
H
H
H
H
H
H
L
–
L–H
–
L–H During the data portion of a write sequence, all four bytes (D
the device.
[35:0]
–
During the data portion of a write sequence, only the lower byte (D
) is written
) is written
[8:0]
[8:0]
into the device. D
remains unaltered.
[35:9]
L
L–H During the data portion of a write sequence, only the lower byte (D
into the device. D remains unaltered.
[35:9]
H
H
H
H
H
H
L–H
–
–
During the data portion of a write sequence, only the byte (D
) is written into
[17:9]
the device. D
and D
remains unaltered.
[8:0]
[35:18]
L
L–H During the data portion of a write sequence, only the byte (D
the device. D and D remains unaltered.
) is written into
[17:9]
[8:0]
[35:18]
H
H
H
H
L–H
–
–
During the data portion of a write sequence, only the byte (D
) is written into
) is written into
) is written into
) is written into
[26:18]
[26:18]
[35:27]
[35:27]
the device. D
and D
remains unaltered.
[17:0]
[35:27]
L
L–H During the data portion of a write sequence, only the byte (D
the device. D and D remains unaltered.
[17:0]
[35:27]
H
H
L–H
–
–
During the data portion of a write sequence, only the byte (D
the device. D remains unaltered.
[26:0]
L
L–H During the data portion of a write sequence, only the byte (D
the device. D remains unaltered.
[26:0]
H
H
H
H
H
H
H
H
L–H
–
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Document #: 38-05619 Rev. *F
Page 11 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Instruction Register
IEEE 1149.1 Serial Boundary Scan (JTAG)
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
page 15. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-1900. The TAP operates using JEDEC
standard 1.8V IO logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
(V ) to prevent clocking of the device. TDI and TMS are inter-
SS
nally pulled up and may be unconnected. They may alternatively
be connected to V through a pull up resistor. TDO must be left
unconnected. Upon power up, the device comes up in a reset
state, which does not interfere with the operation of the device.
Bypass Register
DD
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (V ) when
the BYPASS instruction is executed.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
SS
Boundary Scan Register
Test Mode Select (TMS)
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up inter-
nally, resulting in a logic HIGH level.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
Test Data-Out (TDO)
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (V ) for five rising
TAP Instruction Set
DD
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high-Z state.
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
RESERVED and must not be used. The other five instructions
are described in this section in detail.
TAP Registers
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document #: 38-05619 Rev. *F
Page 12 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
IDCODE
BYPASS
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High-Z state until the next command is supplied during the
Update IR state.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
SAMPLE/PRELOAD
The boundary scan register has a special bit located at bit #47.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
High-Z condition.
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is pre-set LOW to enable the
output when the device is powered up, and also when the TAP
controller is in the Test-Logic-Reset state.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus hold
times (t and t ). The SRAM clock input might not be captured
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
CS
CH
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
Document #: 38-05619 Rev. *F
Page 13 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
TAP Controller State Diagram
The state diagram for the TAP controller follows.
[9]
TEST-LOGIC
1
RESET
0
1
1
1
SELECT
TEST-LOGIC/
SELECT
0
IR-SCAN
IDLE
DR-SCAN
0
0
1
1
CAPTURE-DR
0
CAPTURE-IR
0
0
1
0
1
SHIFT-DR
1
SHIFT-IR
1
EXIT1-DR
0
EXIT1-IR
0
0
0
PAUSE-DR
1
PAUSE-IR
1
0
0
EXIT2-DR
1
EXIT2-IR
1
UPDATE-IR
0
UPDATE-DR
1
1
0
Note
9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document #: 38-05619 Rev. *F
Page 14 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
TAP Controller Block Diagram
0
Bypass Register
2
1
1
1
0
0
0
Selection
TDI
Selection
Circuitry
TDO
Instruction Register
Circuitry
31 30
29
.
.
2
Identification Register
.
106
.
.
.
2
Boundary Scan Register
TCK
TMS
TAP Controller
TAP Electrical Characteristics
Over the Operating Range
Parameter
Description
Output HIGH Voltage
Test Conditions
= −2.0 mA
Min
1.4
1.6
Max
Unit
V
V
V
V
V
V
I
I
I
I
I
V
V
OH1
OH2
OL1
OL2
IH
OH
OH
OL
OL
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
= −100 μA
= 2.0 mA
0.4
0.2
V
= 100 μA
V
0.65V
V
+ 0.3
V
DD
DD
Input LOW Voltage
–0.3
–5
0.35V
5
V
IL
DD
Input and Output Load Current
GND ≤ V ≤ V
DD
μA
X
I
Notes
10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
11. Overshoot: V (AC) < V + 0.85V (Pulse width less than t /2).
/2), Undershoot: V (AC) > −1.5V (Pulse width less than t
IH
DDQ
CYC
IL
CYC
12. All Voltage referenced to Ground.
Document #: 38-05619 Rev. *F
Page 15 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
TAP AC Switching Characteristics
Over the Operating Range
Parameter
Description
Min
Max
Unit
ns
t
t
t
t
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
50
TCYC
TF
20
MHz
ns
20
20
TH
TCK Clock LOW
ns
TL
Setup Times
t
t
t
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
5
5
5
ns
ns
ns
TMSS
TDIS
CS
Hold Times
t
t
t
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
5
5
5
ns
ns
ns
TMSH
TDIH
CH
Capture Hold after Clock Rise
Output Times
t
t
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
10
ns
ns
TDOV
TDOX
0
TAP Timing and Test Conditions
Figure 2 shows the TAP timing and test conditions.
Figure 2. TAP Timing and Test Conditions
0.9V
ALL INPUT PULSES
1.8V
50Ω
0.9V
TDO
0V
Z = 50
Ω
0
C = 20 pF
L
t
t
TH
TL
GND
(a)
Test Clock
TCK
t
TCYC
t
TMSH
t
TMSS
Test Mode Select
TMS
t
TDIS
t
TDIH
Test Data In
TDI
Test Data Out
TDO
t
TDOV
t
TDOX
Notes
13. t and t refer to the setup and hold time requirements of latching data from the boundary scan register.
CS
CH
14. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.
R
F
Document #: 38-05619 Rev. *F
Page 16 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Identification Register Definitions
Value
Instruction Field
Description
CY7C1310BV18
CY7C1910BV18
000
CY7C1312BV18
CY7C1314BV18
Revision Number
(31:29)
000
000
000
Version number.
Cypress Device ID 11010011010000101
(28:12)
11010011010001101
00000110100
11010011010010101
00000110100
11010011010100101 Defines the type of
SRAM.
Cypress JEDEC ID
(11:1)
00000110100
00000110100
Allows unique
identification of
SRAM vendor.
ID Register
Presence (0)
1
1
1
1
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
Bypass
3
1
ID
32
107
Boundary Scan
Instruction Codes
Instruction
EXTEST
Code
000
Description
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
100
Do not use: This instruction is reserved for future use.
SAMPLE/PRELOAD
Captures the input and output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
RESERVED
BYPASS
101
110
111
Do not use: This instruction is reserved for future use.
Do not use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document #: 38-05619 Rev. *F
Page 17 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Boundary Scan Order
Bit #
0
Bump ID
6R
Bit #
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
Bump ID
11H
10G
9G
Bit #
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
Bump ID
7B
6B
6A
5B
5A
4A
5C
4B
3A
1H
1A
2B
3B
1C
1B
3D
3C
1D
2C
3E
2D
2E
1E
2F
Bit #
81
Bump ID
3G
2G
1J
1
6P
82
2
6N
83
3
7P
11F
11G
9F
84
2J
4
7N
85
3K
3J
5
7R
86
6
8R
10F
11E
10E
10D
9E
87
2K
1K
2L
7
8P
88
8
9R
89
9
11P
10P
10N
9P
90
3L
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
91
1M
1L
10C
11D
9C
92
93
3N
3M
1N
2M
3P
2N
2P
1P
3R
4R
4P
5P
5N
5R
10M
11N
9M
94
9D
95
11B
11C
9B
96
9N
97
11L
11M
9L
98
10B
11A
Internal
9A
99
100
101
102
103
104
105
106
10L
11K
10K
9J
8B
7C
9K
6C
3F
10J
11J
8A
1G
1F
7A
Document #: 38-05619 Rev. *F
Page 18 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
DLL Constraints
Power Up Sequence in QDR-II SRAM
■ DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as t
QDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
.
KC Var
■ The DLL functions at frequencies down to 120 MHz.
Power Up Sequence
■ If the input clock is unstable and the DLL is enabled, then the
DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide1024 cycles stable clock
to relock to the desired clock frequency.
■ Apply power and drive DOFF either HIGH or LOW (all other
inputs can be HIGH or LOW).
❐ Apply V before V
.
DD
DDQ
❐ Apply V
before V
or at the same time as V
.
DDQ
REF
REF
❐ Drive DOFF HIGH.
■ Provide stable DOFF (HIGH), power and clock (K, K) for 1024
cycles to lock the DLL.
Figure 3. Power Up Waveforms
K
K
Unstable Clock
> 1024 Stable clock
Stable)
DDQ
Start Normal
Operation
/
V
Clock Start (Clock Starts after V
DD
Stable (< +/- 0.1V DC per 50ns )
/
/
V
VDDQ
V
VDD
DD
DDQ
Fix High (or tie to V
)
DDQ
DOFF
Document #: 38-05619 Rev. *F
Page 19 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch up Current.................................................... > 200 mA
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Operating Range
Ambient
Range
Commercial
Industrial
Temperature (T )
V
V
DDQ
Supply Voltage on V Relative to GND........–0.5V to +2.9V
A
DD
DD
0°C to +70°C
1.8 ± 0.1V 1.4V to V
DD
Supply Voltage on V
Relative to GND.......–0.5V to +V
DD
DDQ
–40°C to +85°C
DC Applied to Outputs in High-Z ........ –0.5V to V
+ 0.3V
DDQ
DC Input Voltage
.............................. –0.5V to V + 0.3V
DD
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Power Supply Voltage
IO Supply Voltage
Test Conditions
Min
1.7
1.4
Typ
1.8
1.5
Max
Unit
V
V
1.9
DD
V
V
V
V
V
V
V
I
V
V
DDQ
OH
DD
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Note 16
Note 17
V
V
/2 – 0.12
/2 – 0.12
– 0.2
V
V
/2 + 0.12
/2 + 0.12
V
DDQ
DDQ
DDQ
V
OL
DDQ
I
I
= −0.1 mA, Nominal Impedance
V
V
V
OH(LOW)
OL(LOW)
IH
OH
OL
DDQ
DDQ
= 0.1 mA, Nominal Impedance
V
0.2
V
SS
V
+ 0.1
V
+ 0.3
V
REF
DDQ
–0.3
V
– 0.1
V
IL
REF
Input Leakage Current
Output Leakage Current
Input Reference Voltage
GND ≤ V ≤ V
−5
−5
5
μA
μA
V
X
I
DDQ
I
GND ≤ V ≤ V
Output Disabled
5
OZ
I
DDQ,
V
Typical Value = 0.75V
0.68
0.75
0.95
735
735
800
900
630
630
675
750
550
550
600
650
REF
I
V
Operating Supply
V
= Max,
250 MHz (x8)
(x9)
mA
DD
DD
DD
I
= 0 mA,
OUT
f = f
= 1/t
MAX
CYC
(x18)
(x36)
200 MHz (x8)
(x9)
mA
mA
(x18)
(x36)
167 MHz (x8)
(x9)
(x18)
(x36)
Notes
15. Power up: Assumes a linear ramp from 0V to V (min) within 200 ms. During this time V < V and V
< V .
DD
DD
IH
DD
DDQ
16. Output are impedance controlled. I = −(V
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
DDQ
OH
DDQ
17. Output are impedance controlled. I = (V
OL
18. V
(min) = 0.68V or 0.46V
, whichever is larger, V
(max) = 0.95V or 0.54V
, whichever is smaller.
REF
DDQ
REF
DDQ
19. The operation current is calculated with 50% read cycle and 50% write cycle.
Document #: 38-05619 Rev. *F
Page 20 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Electrical Characteristics (continued)
DC Electrical Characteristics
[12]
Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ
Max
400
400
400
450
380
380
380
400
360
360
360
370
Unit
I
Automatic Power Down
Current
Max V
,
250 MHz (x8)
(x9)
mA
SB1
DD
Both Ports Deselected,
V
≥ V or V ≤ V
IN
IH
IN
IL
(x18)
f = f
= 1/t
,
MAX
CYC
Inputs Static
(x36)
200 MHz (x8)
(x9)
mA
mA
(x18)
(x36)
167 MHz (x8)
(x9)
(x18)
(x36)
AC Electrical Characteristics
Over the Operating Range
Parameter
Description
Input HIGH Voltage
Input LOW Voltage
Test Conditions
Min
+ 0.2
REF
Typ
–
Max
Unit
V
V
V
–
IH
IL
V
–
–
V
– 0.2
V
REF
Document #: 38-05619 Rev. *F
Page 21 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Input Capacitance
Test Conditions
Max
Unit
pF
C
T = 25°C, f = 1 MHz, V = 1.8V, V = 1.5V
DDQ
5
6
7
IN
A
DD
C
C
Clock Input Capacitance
Output Capacitance
pF
CLK
O
pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
165 FBGA
Package
Parameter
Description
Test Conditions
Unit
Θ
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
18.7
°C/W
JA
Θ
Thermal Resistance
(Junction to Case)
4.5
°C/W
JC
Figure 4. AC Test Loads and Waveforms
V
REF = 0.75V
0.75V
VREF
VREF
0.75V
R = 50Ω
OUTPUT
ALL INPUT PULSES
1.25V
Z = 50Ω
0
OUTPUT
Device
Under
Test
R = 50Ω
L
0.75V
Device
Under
0.25V
5 pF
VREF = 0.75V
Slew Rate = 2 V/ns
ZQ
Test
ZQ
RQ =
RQ =
250Ω
250Ω
INCLUDING
JIG AND
SCOPE
(a)
(b)
Note
20. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, V
= 1.5V, input
DDQ
pulse levels of 0.25V to 1.25V, and output loading of the specified I /I and load capacitance shown in (a) of AC Test Loads and Waveforms.
OL OH
Document #: 38-05619 Rev. *F
Page 22 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Switching Characteristics
Over the Operating Range
250 MHz
200 MHz
167 MHz
Cypress Consortium
Parameter Parameter
Description
Unit
Min Max Min Max Min Max
t
t
t
t
t
V
(Typical) to the First Access
1
1
1
ms
ns
ns
ns
ns
POWER
CYC
KH
DD
t
t
t
t
K Clock and C Clock Cycle Time
Input Clock (K/K and C/C) HIGH
Input Clock (K/K and C/C) LOW
4.0 8.4 5.0 8.4 6.0 8.4
KHKH
KHKL
KLKH
KHKH
1.6
1.6
1.8
–
–
–
2.0
2.0
2.2
–
–
–
2.4
2.4
2.7
–
–
–
KL
K Clock Rise to K Clock Rise and C to C Rise
(rising edge to rising edge)
KHKH
t
t
K/K Clock Rise to C/C Clock Rise (rising edge to rising edge)
0
1.8
0
2.2
0
2.7
ns
KHCH
KHCH
Setup Times
t
t
t
t
t
t
Address Setup to K Clock Rise
0.35
0.35
0.35
–
–
–
0.4
0.4
0.4
–
–
–
0.5
0.5
0.5
–
–
–
ns
ns
ns
SA
AVKH
IVKH
IVKH
Control Setup to K Clock Rise (RPS, WPS)
DDR Control Setup to Clock (K/K) Rise
SC
SCDDR
(BWS , BWS , BWS , BWS )
0
1
3
4
SD
t
t
D
Setup to Clock (K/K) Rise
0.35
–
0.4
–
0.5
–
ns
DVKH
[X:0]
Hold Times
t
t
t
t
t
t
Address Hold after K Clock Rise
0.35
0.35
0.35
–
–
–
0.4
0.4
0.4
–
–
–
0.5
0.5
0.5
–
–
–
ns
ns
ns
HA
KHAX
KHIX
KHIX
Control Hold after K Clock Rise (RPS, WPS)
HC
DDR Control Hold after Clock (K/K) Rise
HCDDR
(BWS , BWS , BWS , BWS )
0
1
3
4
t
t
D Hold after Clock (K/K) Rise
[X:0]
0.35
–
0.4
–
0.5
–
ns
HD
KHDX
Output Times
t
t
t
t
C/C Clock Rise (or K/K in Single Clock Mode) to Data Valid
–
0.45
–
–
0.45
–
–
0.50 ns
ns
CO
CHQV
CHQX
Data Output Hold after Output C/C Clock Rise
(Active to Active)
–0.45
–0.45
–0.50
–
DOH
t
t
t
t
t
t
t
t
t
t
t
t
C/C Clock Rise to Echo Clock Valid
Echo Clock Hold after C/C Clock Rise
Echo Clock High to Data Valid
–
0.45
–
–
0.45
–
–
0.50 ns
ns
0.40 ns
ns
0.50 ns
ns
CCQO
CQOH
CQD
CHCQV
CHCQX
CQHQV
CQHQX
CHQZ
–0.45
–
–0.45
–
–0.50
–
–
0.30
–
0.35
–
Echo Clock High to Data Invalid
–0.30
–
–0.35
–
–0.40
–
–
CQDOH
CHZ
Clock (C/C) Rise to High-Z (Active to High-Z)
0.45
–
0.45
–
Clock (C/C) Rise to Low-Z
–0.45
–0.45
–0.50
–
CLZ
CHQX1
DLL Timing
t
t
t
t
t
t
Clock Phase Jitter
–
0.20
–
–
0.20
–
–
0.20 ns
KC Var
KC Var
DLL Lock Time (K, C)
K Static to DLL Reset
1024
30
1024
30
1024
30
–
–
Cycles
ns
KC lock
KC Reset
KC lock
KC Reset
–
–
Notes
21. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timing of the frequency range in which it is being
operated and outputs data with the output timings of that frequency range.
22. This part has a voltage regulator internally; t
is the time that the power is supplied above V minimum initially before a read or write operation is initiated.
DD
POWER
23. For D2 data signal on CY7C1910BV18 device, t is 0.5 ns for 200 MHz, and 250 MHz frequencies.
SD
24. t
, t
, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads and Waveforms. Transition is measured ±100 mV from steady state voltage.
CHZ CLZ
25. At any voltage and temperature t
is less than t
and t
less than t
.
CHZ
CLZ
CHZ
CO
Document #: 38-05619 Rev. *F
Page 23 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Switching Waveforms
Figure 5. Read/Write/Deselect Sequence
READ
WRITE
2
READ
3
WRITE
4
WRITE
6
WRITE
8
NOP
9
READ
NOP
7
1
5
10
K
t
t
KHKH
t
t
CYC
KH
KL
K
RPS
t
t
SC
HC
WPS
A
A2
A3
A4
A0
A1
A5
A6
t
t
t
t
SA HA
SA HA
D
Q
D31
t
D10
D11
D30
D50
D51
D60
D61
t
t
t
SD
HD
SD
HD
Q20
CQDOH
Q00
Q01
DOH
Q21
Q40
Q41
t
t
CLZ
t
t
CHZ
t
KHCH
t
t
KL
t
CO
CQD
t
C
C
KH
t
t
KHKH
CYC
t
KHCH
t
CCQO
t
CQOH
t
CQ
CQ
CCQO
t
CQOH
DON’T CARE
UNDEFINED
Notes
26. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.
27. Outputs are disabled (High-Z) one clock cycle after a NOP.
28. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document #: 38-05619 Rev. *F
Page 24 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Ordering Information
Not all of the speed, package, and temperature ranges are available. Please contact your local sales representative or
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Package Type
250 CY7C1310BV18-250BZC
CY7C1910BV18-250BZC
CY7C1312BV18-250BZC
CY7C1314BV18-250BZC
CY7C1310BV18-250BZXC
CY7C1910BV18-250BZXC
CY7C1312BV18-250BZXC
CY7C1314BV18-250BZXC
CY7C1310BV18-250BZI
CY7C1910BV18-250BZI
CY7C1312BV18-250BZI
CY7C1314BV18-250BZI
CY7C1310BV18-250BZXI
CY7C1910BV18-250BZXI
CY7C1312BV18-250BZXI
CY7C1314BV18-250BZXI
200 CY7C1310BV18-200BZC
CY7C1910BV18-200BZC
CY7C1312BV18-200BZC
CY7C1314BV18-200BZC
CY7C1310BV18-200BZXC
CY7C1910BV18-200BZXC
CY7C1312BV18-200BZXC
CY7C1314BV18-200BZXC
CY7C1310BV18-200BZI
CY7C1910BV18-200BZI
CY7C1312BV18-200BZI
CY7C1314BV18-200BZI
CY7C1310BV18-200BZXI
CY7C1910BV18-200BZXI
CY7C1312BV18-200BZXI
CY7C1314BV18-200BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
Commercial
Industrial
Commercial
Industrial
Document #: 38-05619 Rev. *F
Page 25 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Ordering Information (continued)
Not all of the speed, package, and temperature ranges are available. Please contact your local sales representative or
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Package Type
167 CY7C1310BV18-167BZC
CY7C1910BV18-167BZC
CY7C1312BV18-167BZC
CY7C1314BV18-167BZC
CY7C1310BV18-167BZXC
CY7C1910BV18-167BZXC
CY7C1312BV18-167BZXC
CY7C1314BV18-167BZXC
CY7C1310BV18-167BZI
CY7C1910BV18-167BZI
CY7C1312BV18-167BZI
CY7C1314BV18-167BZI
CY7C1310BV18-167BZXI
CY7C1910BV18-167BZXI
CY7C1312BV18-167BZXI
CY7C1314BV18-167BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
Commercial
Industrial
Document #: 38-05619 Rev. *F
Page 26 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Package Diagram
Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180
BOTTOM VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 M C A B
PIN 1 CORNER
-0.06
Ø0.50 (165X)
+0.14
1
2
3
4
5
6
7
8
9
10
11
11 10
9
8
7
6
5
4
3
2
1
A
B
A
B
C
D
C
D
E
E
F
F
G
G
H
J
H
J
K
K
L
L
M
M
N
P
R
N
P
R
A
A
1.00
5.00
10.00
13.00 0.10
B
13.00 0.10
B
0.15(4X)
NOTES :
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDEC REFERENCE : MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
SEATING PLANE
C
51-85180-*A
Document #: 38-05619 Rev. *F
Page 27 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Document History Page
Document Title: CY7C1310BV18/CY7C1910BV18/CY7C1312BV18/CY7C1314BV18, 18-Mbit QDR™-II SRAM 2-Word Burst
Architecture
Document Number: 38-05619
Submission
Date
Orig, of
Change
Rev. ECN No.
Description of Change
**
252474
325581
See ECN
See ECN
SYT
SYT
New datasheet
*A
Removed CY7C1910BV18 from the title
Included 300 MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for I and I
specifications
DD
SB1
Replaced the TBDs on the Thermal Characteristics Table to Θ = 28.51°C/W and Θ
JA
JC
= 5.91°C/W
Replaced TBDs in the Capacitance Table for the 165 FBGA Package
Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
(13 x 15 x 1.4 mm)
Added Pb-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per availability
*B
413997
See ECN
NXR
Converted from Preliminary to Final
Added CY7C1910BV18 part number to the title
Removed 300MHz Speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North
First Street” to “198 Champion Court”
Changed C/C Pin Description in the features section and Pin Description
Corrected Typo in Identification Register Definitions for CY7C1910BV18 on page# 16
Added power up sequence details and waveforms
Added foot notes #15, 16, and 17 on page# 18
Replaced Three state with Tri-state
Changed the description of I from Input Load Current to Input Leakage Current on
X
page# 13
Modified the I and I values
Modified test condition in Footnote #20 on page# 19 from V
DD
SB
< V to
DD
DDQ
V
< V
DDQ
DD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*C
*D
423334
472384
See ECN
See ECN
NXR
NXR
Changed the IEEE Standard # 1149.1-1900 to 1149.1-2001
Changed the Minimum Value of t and t from 0.5ns to 0.35ns for 250 MHz and 0.6
SC
HC
ns to 0.4 ns for 200 MHz speed bins
Changed the description of t from K Clock Rise to Clock (K/K) Rise
SA
Changed the description of t and t from Clock (K and K) Rise to K Clock Rise
SC
HC
Modified the ZQ Definition from Alternately, this pin is connected directly to V to
DD
Alternately, this pin is connected directly to V
DDQ
Changed the IEEE Standard # from 1149.1-2001 to 1149.1-1900
Included Maximum Ratings for Supply Voltage on V Relative to GND
DDQ
Changed the Maximum Ratings for DC Input Voltage from V
to V
DDQ
DD
Changed t and t from 40 ns to 20 ns, changed t
, t
, t , t
, t
, t
TH
TL
TMSS TDIS CS TMSH TDIH CH
from 10 ns to 5 ns and changed t
istics.
from 20 ns to 10 ns in Tap Switching Character-
TDOV
Modified Power Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from –10°C
to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the Tap Switching Characteristics.
Updated the Ordering Information Table
Document #: 38-05619 Rev. *F
Page 28 of 29
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Document History Page
Document Title: CY7C1310BV18/CY7C1910BV18/CY7C1312BV18/CY7C1314BV18, 18-Mbit QDR™-II SRAM 2-Word Burst
Architecture
Document Number: 38-05619
*E 1274723
*F 2511674
See ECN
06/03/08
VKN
Corrected typo in the JTAG ID code for CY7C1910BV18
VKN/PYRS Updated Logic Block diagrams
Updated I /I specs
DD SB
Added footnote# 19 related to I
DD
Updated power up sequence waveform and its description
Changed DLL minimum operating frequency from 80 MHz to 120 MHz
Changed Θ spec from 28.51 to 18.7
JA
Changed Θ spec from 5.91 to 4.5
JC
Changed t
maximum spec to 8.4 ns for all speed bins
CYC
Modified footnotes 21 and 28
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Document #: 38-05619 Rev. *F
Revised June 2, 2008
Page 29 of 29
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