HSG2004
SiGe HBT
High Frequency Medium Power Amplifier
REJ03G0484-0400
Rev.4.00
Jun 21, 2006
Features
•
•
•
•
High Transition Frequency
fT = 30 GHz typ.
Low Distortion and Excellent Linearity
P1dB at output = +14.5 dBm typ. f = 5.8 GHz
High Collector to Emitter Voltage
V
CEO = 5 V
Ideal for 2 GHz, 5 GHz Bons. e.g. WLAN, Digital cordless phone.
Outline
Re08ZA-A
(PackV>)
1. Collector
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
9
6
5
7
8
6
7
20
3
2
1
Note: Marking is “2004”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
5
V
1.2
V
200
1Note
150
mA
W
Collector power dissipation
Junction temperature
Pc
Tj
°C
°C
Storage temperature
Tstg
–55 to +150
Note: Value on PCB (40 x 40 x 1.0 mm)
Rev.4.00 Jun 21, 2006 page 1 of 12
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HSG2004
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
VCE = 3 V
400
300
200
100
80
VCE = 3 V
60
40
100
0
20
0
0.2
0.4
0.6
0.8
1.0
1
10
100
Base to Emitter Vltage VBE (V)
Collector Current IC (mA)
Reverse nse vs.
C
Transition Frequency vs.
Collector Current
0.5
0.4
0.3
0.2
0.1
40
30
20
VCE = 3 V
f = 1 GHz
0
0
100
1000
1
2
3
4
urrent IC (mA)
Collector to Base Voltage VCB (V)
Maximum Stable Gain, Maximum Available Gain
vs. Collector Current
Available Gain,
n vs. Frequency
30
4
VCE = 3 V
MAG
25
MSG
MSG
f = 1 GHz
30
20
1.8 GHz
15
20
2
|S
|
21
MAG
2.4 GHz
10
10
0
5.2 GHz
5
VCE = 3 V
C = 30 mA
5.8 GHz
I
0
1
10
100
1000
0.1
1
10
Collector Current IC (mA)
Frequency f (GHz)
Rev.4.00 Jun 21, 2006 page 3 of 12
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HSG2004
2.4 GHz Characteristics
Evaluation Board Circuit
VCC
VBB:Bias Control
10 pF
1000 pF *1 µF
*1 µF 1000 pF 10 pF
R : 27 Ω
L : 10 nH
L : 5.6 nH
C : 1 pF
C : 2 pF
OUT
L : 1.8 nH
IN
L : 1.5 nH
C : 0.9 pF
1 to 2 pF
Pin - Pout Character
3rd. Order Intermodulation Distortion (IMD3)
40
25
VCE = 3.6 V
30
Iidle = 30 mA
f = 2.4 GHz
20
20
10
VCC = 3.6 V
Iidle = 30 mA
f = 2.4 GHz
15
10
5
Fundamental
(1tone)
0
IMD3
∆f = 1MHz)
Iop
0
50
0
-5
-20
-10
0
0
20
40
dBm)
Input Power P (dBm)
in
er vs. Frequency
S parameter vs. Frequency
20
10
20
10
VCE = 3.6 V
C = 30 mA
VCE = 3.6 V
IC = 40 mA
S21
S21
I
S11
0
0
S11
-10
-20
-30
-40
-10
-20
-30
-40
S22
S12
S22
S12
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency f (GHz)
Frequency f (GHz)
Rev.4.00 Jun 21, 2006 page 4 of 12
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HSG2004
5.8 GHz Characteristics
Evaluation Board Circuit
VCC
VBB:Bias Control
10 pF
1000 pF *1 µF
2 pF
*1 µF
1000 pF
10 pF
20 Ω
2 pF
0.5 pF
OUT
0.3 pF
IN
0.5 pF
0.5 pF
Pin - Pout Characteristics
Pin -
3rd. Order Intermodulation Distortion (IMD3)
25
20
15
10
5
250
40
VCE = 3.6 V
Iidle = 30 mA
f = 5.8 GHz
VCC
idle = 3
f = 5.8 G
I
20
0
Fundamental
(1tone)
-20
IMD3
one:∆f = 1MHz)
0
-20
0
20
-10
0
10
-20
0
20
40
Input Power P (dBm)
in
wer Pin (dBm)
S parameter vs. Frequency
equency
20
10
2
10
VCE = 3.6 V
C = 30 mA
IC
I
S21
S21
0
0
S11
S11
S22
-10
-20
-30
-10
-20
-30
S22
S12
5
S12
5
4
6
7
8
4
6
7
8
Frequency f (GHz)
Frequency f (GHz)
Rev.4.00 Jun 21, 2006 page 5 of 12
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HSG2004
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
1
Scale: 14 / div.
60°
90°
.8
1.5
.6
120°
2
.4
3
30°
4
150°
.2
5
10
2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
-10
-5
-4
-.2
-30°
-150°
-3
-.4
-2
-60°
-120°
-.6
-1.5
-.8
-1
-90°
Condition: VCE = 3 V, IC = 30 mA, Zo = 50 Ω
100 to 3000 MHz (100 MHz Step)
Condition: VCE = 3 V, I30 mA, Zo = 50 Ω
100 to 30(100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
3200 t00 MHz Step)
S
S22 Parameter vs. Frequency
iv.
1
.8
1.5
.6
120°
2
.4
3
150°
4
5
10
.4 .6 .8 1
1.5 2 3 4 5 10
180°
-10
-5
-4
-30°
-150°
-3
-2
-60°
-120°
-90°
Condi= 50 Ω
MHz Step)
Condition: VCE = 3 V, IC = 30 mA, Zo = 50 Ω
100 to 3000 MHz (100 MHz Step)
3200 MHz Step)
3200 to 6000 MHz (200 MHz Step)
Rev.4.00 Jun 21, 2006 page 6 of 12
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HSG2004
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
1
Scale: 14 / div.
60°
90°
.8
1.5
.6
120°
2
.4
3
30°
4
150°
.2
5
10
2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
-10
-5
-4
-.2
-30°
-150°
-3
-.4
-2
-60°
-120°
-.6
-1.5
-.8
-1
-90°
Condition: VCE = 3.3 V, IC = 30 mA, Zo = 50 Ω
100 to 3000 MHz (100 MHz Step)
Condition: VCE = 3.3 V, = 30 mA, Zo = 50 Ω
100 to 30(100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
3200 t00 MHz Step)
S
S22 Parameter vs. Frequency
iv.
1
.8
1.5
.6
120°
2
.4
3
150°
4
5
10
.4 .6 .8 1
1.5 2 3 4 5 10
180°
-10
-5
-4
-30°
-150°
-3
-2
-60°
-120°
-90°
CondiZo = 50 Ω
MHz Step)
Condition: VCE = 3.3 V, IC = 30 mA, Zo = 50 Ω
100 to 3000 MHz (100 MHz Step)
3200 MHz Step)
3200 to 6000 MHz (200 MHz Step)
Rev.4.00 Jun 21, 2006 page 7 of 12
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HSG2004
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
1
Scale: 14 / div.
60°
90°
.8
1.5
.6
120°
2
.4
3
30°
4
150°
.2
5
10
2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
-10
-5
-4
-.2
-30°
-150°
-3
-.4
-2
-60°
-120°
-.6
-1.5
-.8
-1
-90°
Condition: VCE = 3.6 V, IC = 30 mA, Zo = 50 Ω
100 to 3000 MHz (100 MHz Step)
Condition: VCE = 3.6 V, = 30 mA, Zo = 50 Ω
100 to 30(100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
3200 t00 MHz Step)
S
S22 Parameter vs. Frequency
iv.
1
.8
1.5
.6
120°
2
.4
3
150°
4
5
10
.4 .6 .8 1
1.5 2 3 4 5 10
180°
-10
-5
-4
-30°
-150°
-3
-2
-60°
-120°
-90°
CondiZo = 50 Ω
MHz Step)
Condition: VCE = 3.6 V, IC = 30 mA, Zo = 50 Ω
100 to 3000 MHz (100 MHz Step)
3200 MHz Step)
3200 to 6000 MHz (200 MHz Step)
Rev.4.00 Jun 21, 2006 page 8 of 12
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HSG2004
S parameter
(VCE = 3 V, IC = 30 mA, Zo = 50 Ω)
S11
ANG (deg.)
S21
ANG (deg.)
S12
S22
f (MHz)
MAG
MAG
47.90
39.45
35.97
32.90
29.04
25.80
22.83
20.30
18.23
16.44
15.00
13.75
12.70
78
MAG
ANG (deg.)
MAG
1.006
0.811
0.685
0.601
0.543
0.505
0.480
0.460
0.447
0.437
0.431
0.427
0.425
0.423
0.423
0.424
0.425
0.427
0.429
0.432
0.435
0.438
0.441
0.444
0.448
0.450
0.454
0.457
0.460
463
.468
0.473
0.477
0.480
0.483
0.485
0.487
0.490
0.493
0.497
0.503
0.509
0.517
0.525
0.534
ANG (deg.)
-19.0
100
200
0.684
0.708
0.664
0.644
0.638
0.640
0.640
0.640
0.641
0.641
0.644
0.648
0.649
0.651
0.651
0.656
0.660
0.665
0.667
0.668
0.669
0.673
0.678
0.683
0.687
0.687
0.688
0.689
0.693
0.698
0.702
0.703
0.709
0.712
0.715
0.723
0.726
0.730
0.742
0.747
0.753
0.765
0.773
0.779
0.790
-61.3
-53.6
147.5
142.1
128.9
117.8
109.5
102.8
97.7
93.4
89.8
86.5
83.6
80.9
78.4
76.0
73.9
71.8
69.9
.0
5
50.9
49.5
48.2
45.0
41.8
39.0
36.0
32.7
29.9
27.0
23.7
20.8
17.8
14.5
11.5
8.4
0.0103
0.0168
0.0180
0.0192
0.0214
0.0225
0.0240
0.0238
0.0242
0.0249
0.0250
0.0252
0.0258
0.0262
0.0263
0.0270
0.0274
0.0282
0.0285
0.0294
0.0297
304
0.
0.039
0.0418
0.0436
0.0453
0.0477
0.0489
0.0511
0.0531
0.0555
0.0571
0.0592
0.0612
0.0628
0.0643
39.8
50.5
41.9
36.7
34.3
31.8
29.2
28.5
30.5
30.4
27.9
29.1
29.4
29.7
30.7
32.4
33.0
33.6
34.5
34.3
35.2
35.9
36.5
37.7
38.0
.6
39.9
39.2
39.3
38.3
37.1
36.5
35.1
33.4
31.6
30.0
28.2
-53.9
300
-81.8
-71.2
400
-105.0
-121.4
-134.8
-143.6
-150.6
-156.5
-161.6
-166.1
-169
-1
17
169.3
167.1
164.9
163.1
161.5
160.0
158.2
156.4
154.5
152.9
151.5
148.6
145.0
142.1
139.0
135.4
132.3
129.2
125.4
122.4
119.4
115.9
113.0
110.3
106.9
104.5
-84.9
500
-94.8
600
-102.7
-109.5
-115.0
-119.7
-123.8
-127.3
-130.2
-132.7
-134.9
-136.9
-138.7
-140.3
-141.7
-143.0
-144.1
-145.2
-146.2
-147.3
-148.0
-148.9
-149.6
-150.3
-150.9
-151.6
-152.2
-153.4
-154.6
-156.0
-157.3
-158.9
-160.6
-162.5
-164.8
-167.0
-169.5
-172.1
-174.9
-177.8
179.3
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3200
3400
3600
3800
4000
4200
4400
4600
4800
5000
5200
5400
5600
5800
6000
6.
6.61
6.32
6.05
5.80
5.57
5.35
5.16
4.80
4.48
4.19
3.95
3.72
3.51
3.33
3.14
2.98
2.84
2.69
2.55
2.43
2.30
5.3
2.18
2.2
176.2
Rev.4.00 Jun 21, 2006 page 9 of 12
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HSG2004
S parameter
(VCE = 3.3 V, IC = 30 mA, Zo = 50 Ω)
S11
ANG (deg.)
S21
ANG (deg.)
S12
S22
f (MHz)
MAG
MAG
48.82
40.51
36.68
33.30
29.33
26.04
23.01
20.48
18.38
16.56
15.11
13.85
12.80
87
MAG
ANG (deg.)
MAG
0.755
0.814
0.690
0.598
0.544
0.506
0.480
0.460
0.448
0.436
0.431
0.426
0.424
0.422
0.422
0.423
0.424
0.426
0.428
0.431
0.434
0.437
0.440
0.443
0.447
0.450
0.453
0.456
0.459
462
.467
0.472
0.476
0.479
0.483
0.484
0.487
0.489
0.493
0.497
0.502
0.509
0.516
0.524
0.534
ANG (deg.)
-22.6
100
200
0.674
0.708
0.668
0.646
0.637
0.638
0.640
0.639
0.639
0.639
0.643
0.647
0.648
0.649
0.650
0.653
0.658
0.663
0.665
0.667
0.667
0.671
0.676
0.682
0.685
0.685
0.687
0.688
0.692
0.696
0.701
0.702
0.708
0.710
0.714
0.722
0.724
0.729
0.740
0.746
0.752
0.764
0.773
0.778
0.789
-60.3
-53.6
147.33
141.98
128.82
117.87
109.63
102.93
97.82
93.51
89.85
86.63
83.71
80.95
78.44
76.09
73.89
71.81
69.89
99
52
50.90
49.52
48.15
44.97
41.72
39.02
35.99
32.71
29.88
26.99
23.61
20.69
17.76
14.45
11.42
8.38
0.0124
0.0146
0.0189
0.0211
0.0216
0.0229
0.0234
0.0239
0.0244
0.0247
0.0248
0.0252
0.0259
0.0258
0.0269
0.0273
0.0276
0.0281
0.0288
0.0294
0.0297
305
0.
0.039
0.0414
0.0437
0.0458
0.0477
0.0490
0.0509
0.0530
0.0554
0.0573
0.0592
0.0614
0.0623
0.0639
106.4
57.5
39.9
42.3
34.1
32.8
31.7
29.8
30.0
28.7
29.6
27.6
30.7
30.7
31.0
32.5
31.8
33.4
34.3
35.0
35.5
35.8
36.7
37.6
37.5
.1
40.5
39.9
38.8
38.5
37.5
36.7
35.6
33.8
31.9
30.6
28.1
-53.5
300
-81.6
-70.4
400
-104.3
-121.1
-134.3
-143.1
-150.2
-156.1
-161.2
-165.7
-169
-1
17
169.5
167.3
165.1
163.3
161.6
160.1
158.4
156.5
154.7
153.1
151.6
148.7
145.2
142.3
139.2
135.5
132.4
129.4
125.5
122.4
119.5
115.9
113.1
110.4
107.0
104.5
-83.9
500
-94.1
600
-102.0
-108.7
-114.2
-119.1
-123.2
-126.6
-129.5
-132.0
-134.3
-136.4
-138.2
-139.8
-141.2
-142.5
-143.6
-144.8
-145.7
-146.7
-147.6
-148.4
-149.2
-149.8
-150.6
-151.2
-151.8
-153.0
-154.2
-155.6
-156.9
-158.5
-160.3
-162.2
-164.4
-166.7
-169.1
-171.7
-174.6
-177.5
179.6
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3200
3400
3600
3800
4000
4200
4400
4600
4800
5000
5200
5400
5600
5800
6000
6.
6.66
6.36
6.10
5.85
5.61
5.39
5.19
4.84
4.51
4.22
3.98
3.75
3.54
3.35
3.17
3.01
2.86
2.71
2.57
2.45
2.32
5.20
2.19
2.09
176.6
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HSG2004
S parameter
(VCE = 3.6 V, IC = 30 mA, Zo = 50 Ω)
S11
ANG (deg.)
S21
ANG (deg.)
S12
S22
f (MHz)
MAG
MAG
49.50
41.32
37.11
33.55
29.52
26.17
23.13
20.59
18.47
16.65
15.20
13.93
12.87
94
MAG
ANG (deg.)
MAG
0.897
0.815
0.690
0.605
0.546
0.507
0.481
0.461
0.447
0.437
0.431
0.427
0.424
0.423
0.422
0.423
0.424
0.426
0.428
0.431
0.433
0.436
0.439
0.443
0.446
0.450
0.453
0.455
0.459
462
.467
0.472
0.476
0.479
0.482
0.485
0.487
0.489
0.492
0.496
0.502
0.509
0.516
0.524
0.533
ANG (deg.)
-21.2
100
200
0.686
0.713
0.669
0.645
0.637
0.638
0.638
0.637
0.638
0.638
0.642
0.645
0.645
0.648
0.648
0.652
0.657
0.662
0.664
0.665
0.666
0.670
0.675
0.680
0.684
0.683
0.684
0.686
0.691
0.695
0.700
0.700
0.706
0.709
0.713
0.721
0.723
0.728
0.739
0.745
0.751
0.762
0.771
0.777
0.788
-60.1
-53.6
147.35
141.93
128.90
118.06
109.81
103.15
98.02
93.66
90.02
86.77
83.83
81.07
78.55
76.19
73.98
71.89
69.97
06
52
50.91
49.54
48.16
44.99
41.72
39.01
36.00
32.71
29.88
26.99
23.59
20.67
17.72
14.42
11.39
8.34
0.0070
0.0155
0.0200
0.0199
0.0221
0.0222
0.0238
0.0239
0.0243
0.0245
0.0251
0.0256
0.0253
0.0263
0.0268
0.0271
0.0274
0.0279
0.0287
0.0292
0.0298
306
0.
0.039
0.0420
0.0430
0.0452
0.0471
0.0489
0.0510
0.0527
0.0551
0.0573
0.0590
0.0610
0.0624
0.0638
30.5
53.8
42.6
37.3
34.8
31.6
30.5
28.3
28.8
29.0
29.2
29.2
30.2
30.9
30.6
32.1
32.5
33.0
33.5
34.2
34.7
35.9
36.8
36.8
37.7
.0
40.3
40.2
39.2
38.4
37.6
36.4
35.6
33.7
32.0
30.4
28.5
-52.9
300
-81.1
-69.6
400
-103.8
-120.5
-133.6
-142.5
-149.7
-155.6
-160.8
-165.3
-169
-1
17
169.8
167.5
165.3
163.5
161.9
160.4
158.7
156.8
154.9
153.2
151.8
148.9
145.3
142.4
139.3
135.6
132.6
129.5
125.6
122.6
119.7
116.1
113.2
110.4
107.1
104.7
-83.3
500
-93.3
600
-101.4
-108.1
-113.7
-118.4
-122.5
-125.9
-129.0
-131.4
-133.8
-135.8
-137.7
-139.3
-140.7
-142.1
-143.2
-144.3
-145.4
-146.3
-147.1
-148.0
-148.8
-149.5
-150.1
-150.8
-151.4
-152.5
-153.9
-155.2
-156.6
-158.1
-159.9
-161.8
-164.0
-166.4
-168.8
-171.4
-174.3
-177.2
179.8
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3200
3400
3600
3800
4000
4200
4400
4600
4800
5000
5200
5400
5600
5800
6000
7.
6.69
6.40
6.13
5.88
5.64
5.42
5.22
4.86
4.53
4.24
4.00
3.77
3.56
3.37
3.18
3.02
2.87
2.72
2.58
2.46
2.33
5.17
2.21
2.04
176.8
Rev.4.00 Jun 21, 2006 page 11 of 12
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HSG2004
Package Dimensions
Package Name
HWQFN-8
JEITA Package Code
P-HWQFN8-2x2-0.65
RENESAS Code
PWQN0008ZA-A
Previous Code
TNP-8TV
MASS[Typ.]
0.009g
D
b
B
A
x
M
S
A
B
7
6
5
5
6
7
0.90
8
4
4
8
C0.15
1
2
3
3
2
1
e
ZD
Dimension in Millimeters
Reference
Symbol
Min
1.965
1.965
Nom
2.00
2.00
Max
2.075
2.075
0.80
D
E
A
A1
A2
b
0
0.05
0.3
e
0.65
0.35
Lp
x
0.10
0.08
0.10
S
y
y1
ZD
ZE
0.350
0.225
Ordering Information
Part Name
Quantity
2000 pcs.
ipping Container
oss Taping
HSG2004TB-E
Note: Therefore especially small contact area of terminalequate soldering condition is
applied.
Contact Renesas sales office for any question regarding ion of Renesas.
Rev.4.00 Jun 21, 2006 page 12 of 12
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Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable materia(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a sist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey ay intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. asfor any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, tion examples contained in these materials.
3. All information contained iuct data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these matRenesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommendnology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before p
The information descor typographical errors.
Renesas Technology Ce, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention ogy Corp. by various means, including the Renesas Technology Corp. Semiconductor
4. When using any or all of the iding product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a tote applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, tion contained herein.
5. Renesas Technology Corp. semicouse in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specifitransportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Techce in whole or in part these materials.
7. If these products or technologies are subject ty must be exported under a license from the Japanese government and
cannot be imported into a country other than th
Any diversion or reexport contrary to the export cocountry of destination is prohibited.
8. Please contact Renesas Technology Corp. for furthcontained therein.
RENESAS SALES OFFICES
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Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
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