This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4562G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1748G
■ Package
■ Features
•
Code
• High transition frequency fT
SMini3-F2
Marking Symbol: AM
Pin Name
1: Base
• Small collector output capacitance (Common base, input open cir-
cuited) Cob
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
•
•
2: Emitter
3: Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
50
50
V
5
50
V
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
50
50
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
V
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
V
0.1
100
500
0.30
µA
µA
ICEO
hFE
200
VCE(sat) IC = 10 mA, IB = 1 mA
0.06
250
1.5
V
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
MHz
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
hFE
200 to 400
250 to 500
Publication date: May 2007
SJC00366AED
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1
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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– Any applications other than the standard applications intended.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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