This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
+0.10
+0.1
–0.0
0.15
0.3
–0.05
3
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.2
■ Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
30
1: Base
2: Emitter
3:Collector
20
V
3
15
V
EIAJ: SC-70
SMini3-G1 Package
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
Marking Symbol: U
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VEBO
VBE
Conditions
Min
30
3
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
V
VCB = 6 V, IE = −1 mA
720
mV
Forward current transfer ratio *
Transition frequency
hFE
VCB = 6 V, IE = −1 mA
65
260
1.0
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
VCB = 6 V, IE = −1 mA, f = 10.7 MHz
450
650
0.8
MHz
pF
Common-emitter reverse transfer
capacitance
Cre
Power gain
GP
VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
dB
Noise figure
NF
VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
C
D
hFE
65 to 160
100 to 260
Publication date: March 2003
SJC00142BED
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3931
Cob VCB
GP IE
NF IE
40
30
20
10
0
12
10
8
1.2
1.0
0.8
0.6
0.4
0.2
0
f = 100 MHz
Rg = 50 kΩ
Ta = 25°C
IE = 0
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
f = 1 MHz
Ta = 25°C
VCE = 10 V
6 V
6
VCE = 6 V, 10 V
4
2
0
− 0.1
−1
−10
−100
− 0.1
−1
−10
−100
0
5
10
15
20
25
30
(
)
(
)
(
)
V
Emitter current IE mA
Emitter current IE mA
Collector-base voltage VCB
bie gie
bre gre
bfe gfe
0
−1
−2
−3
−4
−5
−6
0
−20
20
16
12
8
yie = gie + jbie
10.7
25
150
yre = gre + jbre
10.7
VCE = 10 V
−4 mA
VCE = 10 V
58
−1 mA
100
100
150
−2 mA
−7 mA
−4 mA
−1 mA
−2 mA
100
58
−40
−4 mA
150
58
100
58
IE = −7 mA
−60
f = 150 MHz
IE = −7 mA
100
58
−80
100
25
4
25
−100
−120
yfe = gfe + jbfe
VCE = 10 V
f = 150 MHz
f = 10.7 MHz
0
− 0.5 − 0.4 − 0.3 − 0.2 − 0.1
0
0
20
40
60
80
100
0
3
6
9
12
15
(
)
(
)
(
)
Reverse transfer conductance gre mS
Forward transfer conductance gfe mS
Input conductance gie mS
boe goe
1.2
1.0
0.8
0.6
0.4
0.2
0
150
−2 mA
−4 mA
100
−7 mA
58
25
yoe = goe + jboe
VCE = 10 V
f = 10.7 MHz
0
0.1
0.2
0.3
0.4
0.5
(
)
Output conductance goe mS
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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