This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1722G
Silicon PNP epitaxial planar type
For high breakdown voltage low-frequency amplification
■ Features
■ Package
• Code
SSMini3-F3
• Marking Symbol: 4R
• Pin Name
1. Base
• High collector-emitter voltage (Base open) VCEO
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
2. Emitter
3. Collector
Parameter
Symbol
Rating
−100
−100
−5
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
V
V
Collector current
IC
ICP
PC
Tj
−20
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
−50
125
125
Tstg
−55 to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−100
−100
−5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VCE = −10 V, IC = −2 mA
V
−100
−1
nA
µA
ICEO
hFE
200
700
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −10 mA, IB = −1 mA
fT VCB = −5 V, IE = 2 mA, f = 200 MHz
− 0.3
V
200
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
SJC00389AED
1
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This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 0.05
(5°)
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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