CY62158E MoBL®
8-Mbit (1M x 8) Static RAM
®
is ideal for providing More Battery Life™ (MoBL ) in portable
Features
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption. Placing the device into standby mode reduces
■ Very high speed: 45 ns
❐ Wide voltage range: 4.5V – 5.5V
power consumption significantly when deselected (CE HIGH or
1
■ Ultra low active power
CE LOW).
2
❐ Typical active current:1.8 mA @ f = 1 MHz
To write to the device, take Chip Enables (CE LOW and CE
HIGH) and Write Enable (WE) input LOW. Data on the eight IO
1
2
❐ Typical active current: 18 mA @ f = f
max
pins (IO through IO ) is then written into the location specified
■ Ultra low standby power
❐ Typical standby current: 2 μA
❐ Maximum standby current: 8 μA
0
7
on the address pins (A through A ).
0
19
To read from the device, take Chip Enables (CE LOW and CE
1
2
HIGH) and OE LOW while forcing the WE HIGH. Under these
conditions, the contents of the memory location specified by the
address pins appear on the IO pins.
■ Easy memory expansion with CE , CE and OE features
1
2
■ Automatic power down when deselected
■ CMOS for optimum speed and power
■ Offered in Pb-free 44-Pin TSOP II package
The eight input and output pins (IO through IO ) are placed in
0
7
a high impedance state when the device is deselected (CE
1
HIGH or CE LOW), the outputs are disabled (OE HIGH), or a
2
write operation is in progress (CE LOW and CE HIGH and WE
of read and write modes.
2
Functional Description
®
The CY62158E MoBL is a high performance CMOS static RAM
For best practice recommendations, refer to the Cypress
organized as 1024K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
Logic Block Diagram
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
IO
0
DATA IN DRIVERS
IO
1
IO
2
1024K x 8
ARRAY
IO
3
IO
IO
IO
IO
4
5
6
7
A
A
A
A
9
10
11
12
CE
CE
1
2
POWER
DOWN
COLUMN DECODER
WE
OE
Cypress Semiconductor Corporation
Document #: 38-05684 Rev. *D
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 16, 2008
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CY62158E MoBL®
DC Input Voltage
.....................–0.5V to V
+ 0.5V
Maximum Ratings
CC(max)
Output Current into Outputs (LOW)............................. 20 mA
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Static Discharge Voltage............................................>2001V
(MIL-STD-883, Method 3015)
Storage Temperature.................................. –65°C to +150°C
Latch up Current......................................................>200 mA
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Operating Range
Supply Voltage to Ground Potential–0.5V to V
+ 0.5V
CC(max)
Ambient
Device
Range
V
CC
Temperature
in High-Z State
........................–0.5V to V
+ 0.5V
CY62158ELL
Industrial –40°C to +85°C 4.5V – 5.5V
CC(max)
Electrical Characteristics
Over the Operating Range
-45
[2]
Parameter
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Test Conditions
Min
Typ
Max
Unit
V
V
I
I
= –1 mA
= 2.1 mA
2.4
OH
OL
IH
OH
V
V
V
I
0.4
V
OL
V
V
= 4.5V to 5.5V
= 4.5V to 5.5V
2.2
–0.5
–1
V
+ 0.5V
V
CC
CC
CC
0.8
+1
+1
25
3
V
IIL
Input Leakage Current
Output Leakage Current
GND < V < V
CC
μA
μA
mA
mA
IX
I
I
I
GND < V < V , Output Disabled
–1
OZ
O
CC
V
Operating Supply
f = f
= 1/t
V
= V
CCmax
= 0 mA
18
CC
CC
MAX
RC
CC
Current
I
OUT
f = 1 MHz
1.8
CMOS levels
I
Automatic CE Power down CE > V − 0.2V, CE < 0.2V
2
8
μA
SB1
1
CC
2
Current — CMOS Inputs
V
> V – 0.2V, V < 0.2V)
IN CC IN
f = f
(Address and Data Only),
MAX
f = 0 (OE, and WE), V = V
CC
CCmax
I
Automatic CE Power-down CE > V – 0.2V or CE < 0.2V,
2
8
μA
SB2
1
CC
2
Current — CMOS Inputs
V
> V – 0.2V or V < 0.2V,
IN CC IN
f = 0, V = V
CC
CCmax
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions
Input Capacitance T = 25°C, f = 1 MHz,
Output Capacitance
Max
10
Unit
pF
C
IN
A
V
= V
CC(typ)
CC
C
10
pF
OUT
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
TSOP II
Unit
Θ
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
75.13
°C/W
JA
Θ
Thermal Resistance
(Junction to Case)
8.95
°C/W
JC
Notes
3. V (min) = –2.0V for pulse durations less than 20 ns.
IL
4.
V
(max) = V + 0.75V for pulse durations less than 20 ns.
IH CC
5. Full Device AC operation assumes a 100 μs ramp time from 0 to V (min) and 200 μs wait time after V stabilization.
CC
CC
6. Only chip enables (CE and CE ), must be tied to CMOS levels to meet the I / I spec. Other inputs can be left floating.
1
2
SB2 CCDR
Document #: 38-05684 Rev. *D
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CY62158E MoBL®
Figure 2. AC Test Loads and Waveforms
R1
ALL INPUT PULSES
V
CC
3V
90%
10%
OUTPUT
90%
10%
GND
R2
100 pF
Fall Time = 1 V/ns
Rise Time = 1 V/ns
INCLUDING
JIG AND
SCOPE
Equivalent to: THÉVENIN EQUIVALENT
R
TH
OUTPUT
V
Parameters
5.0V
Unit
R1
R2
R
1838
994
Ω
Ω
Ω
V
645
TH
V
1.75
TH
Data Retention Characteristics
Over the Operating Range
[2]
Parameter
Description
Conditions
Min
Typ
Max
Unit
V
V
V
for Data Retention
2
DR
CC
I
Data Retention Current
V
= V
DR
8
μA
CCDR
CC
CE > V − 0.2V, CE < 0.2V,
1
CC
2
V
> V − 0.2V or V < 0.2V
CC IN
IN
[7]
t
t
Chip Deselect to Data
Retention Time
0
ns
ns
CDR
R
Operation Recovery Time
t
RC
Figure 3. Data Retention Waveform
DATA RETENTION MODE
V
(min)
> 2.0 V
V
t
(min)
V
CC
V
CC
DR
CC
t
CDR
R
CE
or
1
CE
2
Notes
7. Tested initially and after any design or process changes that may affect these parameters.
8. Full device operation requires linear V ramp from V to V (min) > 100 μs or stable at V (min) > 100 μs.
CC
DR
CC
CC
Document #: 38-05684 Rev. *D
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CY62158E MoBL®
Switching Characteristics
Over the Operating Range
45 ns
Unit
Parameter
Description
Min
45
Max
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Read Cycle Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RC
Address to Data Valid
45
AA
Data Hold from Address Change
10
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
CE LOW and CE HIGH to Data Valid
45
22
1
2
OE LOW to Data Valid
OE LOW to Low Z
5
10
0
OE HIGH to High Z
CE LOW and CE HIGH to Low Z
18
18
45
1
2
CE HIGH or CE LOW to High Z
1
2
CE LOW and CE HIGH to Power Up
1
2
CE HIGH or CE LOW to Power Down
PD
1
2
Write Cycle
t
t
t
t
t
t
t
t
t
t
Write Cycle Time
CE LOW and CE HIGH to Write End
45
35
35
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
SCE
AW
1
2
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
HA
0
SA
35
25
0
PWE
SD
Data Setup to Write End
Data Hold from Write End
HD
WE LOW to High Z
18
HZWE
LZWE
WE HIGH to Low Z
10
Notes
9. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1V/ns), timing reference levels of V
/2, input pulse
CC(typ)
levels of 0 to V
CC(typ)
OL OH
10. At any given temperature and voltage condition, t
is less than t
, t
for any given device.
LZWE
HZCE
LZCE HZOE
LZOE
HZWE
11. t
, t
, and t
transitions are measured when the outputs enter a high impedance state.
HZOE HZCE
HZWE
12. The internal write time of the memory is defined by the overlap of WE, CE = V , and CE = V . All signals must be ACTIVE to initiate a write and any of these signals
1
IL
2
IH
can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.
Document #: 38-05684 Rev. *D
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CY62158E MoBL®
Switching Waveforms
Figure 4 shows address transition controlled read cycle waveforms.
Figure 4. Read Cycle No. 1
t
RC
ADDRESS
DATA OUT
t
AA
t
OHA
PREVIOUS DATA VALID
DATA VALID
Figure 5 shows OE controlled read cycle waveforms.
Figure 5. Read Cycle No. 2
ADDRESS
t
RC
CE
1
CE
2
t
ACE
OE
t
HZOE
t
DOE
t
HZCE
t
LZOE
HIGH
IMPEDANCE
HIGH IMPEDANCE
DATA OUT
VCC
DATA VALID
t
LZCE
t
PD
ICC
t
PU
50%
SUPPLY
50%
ISB
CURRENT
Notes
13. Device is continuously selected. OE, CE = V , CE = V .
IH
1
IL
2
14. WE is HIGH for read cycle.
15. Address valid before or similar to CE transition LOW and CE transition HIGH.
1
2
Document #: 38-05684 Rev. *D
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CY62158E MoBL®
Switching Waveforms (continued)
Figure 6 shows WE controlled write cycle waveforms.
Figure 6. Write Cycle No. 1
t
WC
ADDRESS
t
SCE
CE
1
CE
2
t
t
HA
AW
t
SA
t
PWE
WE
OE
t
t
SD
HD
VALID DATA
DATA IO
t
HZOE
1
2
Figure 7. Write Cycle No. 2
t
WC
ADDRESS
t
SCE
CE
1
t
SA
CE
2
t
t
HA
AW
t
PWE
WE
OE
t
t
HD
SD
DATA IO
VALID DATA
Notes
16. Data IO is high impedance if OE = V
.
IH
17. If CE goes HIGH or CE goes LOW simultaneously with WE HIGH, the output remains in high impedance state.
1
2
18. During this period, the IOs are in output state. Do not apply input signals.
Document #: 38-05684 Rev. *D
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CY62158E MoBL®
Switching Waveforms (continued)
Figure 8 shows WE controlled, OE LOW write cycle waveforms.
Figure 8. Write Cycle No. 3
t
WC
ADDRESS
t
SCE
CE
1
CE
2
t
t
HA
AW
t
SA
t
PWE
WE
t
t
HD
SD
DATA IO
VALID DATA
t
t
LZWE
HZWE
Truth Table
CE
CE
WE
OE
Inputs/Outputs
High Z
Mode
Power
1
2
H
X
L
L
L
X
L
X
X
H
H
L
X
X
L
Deselect/Power Down
Deselect/Power Down
Read
Standby (I
Standby (I
)
)
SB
High Z
SB
H
H
H
Data Out
High Z
Active (I
Active (I
Active (I
)
)
)
CC
CC
CC
H
X
Output Disabled
Write
Data in
Ordering Information
Speed
(ns)
Package
Diagram
Operating
Range
Package Type
Ordering Code
45
CY62158ELL-45ZSXI
51-85087 44-Pin TSOP II (Pb-free)
Industrial
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CY62158E MoBL®
Package Diagrams
Figure 9. 44-Pin TSOP II, 51-85087
51-85087-*A
Document #: 38-05684 Rev. *D
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CY62158E MoBL®
Document History Page
®
Document Title: CY62158E MoBL 8-Mbit (1M x 8) Static RAM
Document Number: 38-05684
Orig. of
Change
REV.
ECN NO. Issue Date
Description of Change
**
270350
291271
See ECN
See ECN
PCI
New Data Sheet
*A
SYT
Converted from Advance Information to Preliminary
Changed input pulse level from V to 3V in the AC Test Loads and Waveforms
CC
Modified footnote #9 to include timing reference level of 1.5V and input pulse
level of 3V
*B
1462592
See ECN VKN/AESA Converted from preliminary to final
Removed 35 ns speed bin
Removed “L” parts
Removed 48-Ball VFBGA package
Changed I
Changed I
Changed I
Changed I
Changed I
Changed I
Changed t
Changed t
Changed t
Changed t
spec from 2.3 mA to 3 mA at f=1 MHz
CC(max)
spec from 16 mA to 18 mA at f=f
CC(typ)
MAX
spec from 28 mA to 25 mA at f=f
CC(max)
SB1(typ)
SB1(max)
CCDR(max)
MAX
and I
and I
spec from 0.9 μA to 2 μA
SB2(max)
SB2(typ)
spec from 4.5 μA to 8 μA
spec from 4.5 μA to 8 μA
spec from 3 ns to 5 ns
spec from 6 ns to 10 ns
spec from 22 ns to 18 ns
spec from 30 ns to 35 ns
LZOE
LZCE
HZCE
PWE
Changed t spec from 22 ns to 25 ns
SD
Changed t
spec from 6 ns to 10 ns
LZWE
Added footnote# 6 related to I
and I
SB2
CCDR
Updated Ordering information table
See ECN VKN/PYRS Corrected typo in the Ordering Information table
See ECN PYRS Corrected ECN number
*C
*D
2428708
2516494
© Cypress Semiconductor Corporation, 2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any
circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical,
life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical
components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 38-05684 Rev. *D
Revised June 16, 2008
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