CY7C1370D
CY7C1372D
18-Mbit (512K x 36/1M x 18) Pipelined
SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1370D and CY7C1372D are 3.3V, 512K x 36 and
• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
— Available speed grades are 250, 200 and 167 MHz
1M x 18 Synchronous pipelined burst SRAMs with No Bus
Latency™ (NoBL™) logic, respectively. They are designed to
support unlimited true back-to-back Read/Write operations
with no wait states. The CY7C1370D and CY7C1372D are
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read transitions. The CY7C1370D and CY7C1372D are
pin compatible and functionally equivalent to ZBT devices.
• Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
• Fully registered (inputs and outputs) for pipelined
operation
• Byte Write capability
• 3.3V core power supply (V
)
DD
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
• 3.3V/2.5V I/O power supply(V
• Fast clock-to-output times
)
DDQ
— 2.6 ns (for 250-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
Write operations are controlled by the Byte Write Selects
(BW –BW for CY7C1370D and BW –BW for CY7C1372D)
and a Write Enable (WE) input. All writes are conducted with
on-chip synchronous self-timed write circuitry.
a
d
a
b
• Available in JEDEC-standard lead-free 100-pin TQFP,
lead-free and non-lead-free 119-Ball BGA and 165-Ball
FBGA package
Three synchronous Chip Enables (CE , CE , CE ) and an
1
2
3
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• Burst capability—linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Logic Block Diagram-CY7C1370D (512K x 36)
ADDRESS
REGISTER 0
A0, A1, A
A1
A0
A1'
A0'
D1
D0
Q1
Q0
BURST
LOGIC
MODE
C
ADV/LD
C
CLK
CEN
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
O
O
S
U
D
A
T
U
T
P
T
P
E
N
S
U
T
U
T
ADV/LD
BWa
BWb
BWc
BWd
A
E
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
R
E
G
I
MEMORY
ARRAY
B
U
F
S
T
E
E
R
I
DQs
WRITE
DRIVERS
DQPa
DQPb
DQPc
DQPd
A
M
P
S
T
E
R
S
F
E
R
S
S
WE
E
E
N
G
INPUT
REGISTER 1
INPUT
REGISTER 0
E
E
OE
READ LOGIC
CE1
CE2
CE3
SLEEP
CONTROL
ZZ
Cypress Semiconductor Corporation
Document #: 38-05555 Rev. *F
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 28, 2006
CY7C1370D
CY7C1372D
Pin Configurations
100-pin TQFP Pinout
DQPc
DQc
DQc
1
2
3
4
5
6
7
8
NC
NC
NC
DDQ
1
2
3
4
5
6
7
8
A
NC
NC
78
DQPb
DQb
DQb
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
80
79
V
V
DDQ
V
V
V
NC
DQPa
DQa
DQa
DDQ
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DDQ
SS
V
V
V
SS
SS
SS
DQc
DQc
NC
NC
DQb
DQb
DQb
DQb
DQb
DQb
DQc
DQc
9
9
V
V
SS
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
SS
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
SS
SS
V
V
DDQ
DDQ
V
V
DQa
DQa
V
NC
V
ZZ
DDQ
DDQ
DQc
DQc
NC
DQb
DQb
DQb
DQb
NC
V
SS
CY7C1370D
(512K × 36)
SS
V
V
DD
NC
DD
CY7C1372D
(1M × 18)
NC
NC
V
DD
DD
V
V
SS
SS
ZZ
DQa
DQa
DQd
DQb
DQb
DQa
DQa
DQd
V
V
DDQ
DDQ
V
V
V
DQa
DQa
NC
NC
V
V
DDQ
DDQ
V
V
SS
V
SS
SS
SS
DQd
DQd
DQd
DQd
DQa
DQa
DQb
DQb
DQa DQPb
DQa
NC
V
SS
V
V
SS
SS
SS
V
V
DDQ
V
DDQ
DDQ
DDQ
DQd
DQd
DQPd
DQa
DQa
DQPa
NC
NC
NC
NC
NC
NC
Document #: 38-05555 Rev. *F
Page 3 of 28
CY7C1370D
CY7C1372D
Pin Configurations (continued)
119-Ball BGA
Pinout
CY7C1370D (512K x 36)
1
2
3
4
5
6
7
V
A
A
A
A
A
V
DDQ
A
DDQ
NC/576M
NC/1G
CE
A
A
A
ADV/LD
A
A
CE
A
NC
NC
DQ
B
C
D
2
3
V
DD
DQ
DQP
DQ
V
NC
V
DQP
DQ
c
c
SS
SS
SS
SS
SS
SS
b
b
DQ
V
V
CE
V
V
DQ
b
E
F
c
c
c
c
c
1
b
b
b
b
V
DQ
DQ
DQ
V
DQ
DQ
DQ
V
V
DDQ
OE
A
DDQ
DQ
DQ
G
H
J
BW
V
BW
V
c
b
c
b
DQ
DQ
WE
c
SS
b
SS
V
NC
V
NC
V
DDQ
DDQ
DD
DD
DD
DQ
DQ
V
CLK
NC
V
DQ
DQ
K
L
d
d
d
SS
SS
a
a
a
a
DQ
DQ
DQ
DQ
DQ
DQ
DQ
BW
BW
d
d
a
V
V
V
V
V
V
V
V
DDQ
M
N
P
CEN
A1
DDQ
d
SS
SS
SS
SS
SS
SS
a
a
DQ
DQ
DQ
d
d
a
a
DQ
DQP
A
A0
DQP
A
DQ
d
d
a
NC/144M
NC
MODE
A
V
NC/288M
ZZ
R
T
NC
A
DD
NC/72M
TMS
A
NC/36M
NC
V
TDI
TCK
TDO
V
U
DDQ
DDQ
CY7C1372D (1M x 18)
1
2
3
4
5
6
7
V
A
A
A
A
A
V
A
B
C
D
E
F
DDQ
DDQ
NC/576M
NC/1G
CE
A
A
A
A
A
NC
NC
NC
CE
ADV/LD
2
3
V
A
DD
DQ
NC
DQ
V
NC
V
DQP
b
SS
SS
SS
SS
SS
SS
a
NC
V
V
V
V
NC
DQ
CE
b
a
1
V
NC
DQ
DQ
V
OE
A
DDQ
a
DDQ
NC
NC
NC
DQ
G
H
J
BW
V
b
a
b
DQ
V
NC
V
DQ
NC
V
WE
b
SS
SS
a
V
NC
V
NC
V
DDQ
DD
DD
DD
DDQ
NC
DQ
V
CLK
NC
V
NC
DQ
K
L
b
SS
SS
a
DQ
NC
DQ
NC
DQ
NC
BW
b
a
a
V
V
V
V
V
NC
V
M
N
P
R
T
CEN
A1
DDQ
b
SS
SS
SS
SS
DDQ
DQ
NC
DQP
A
V
DQ
NC
b
SS
a
NC
V
A0
NC
A
DQ
b
SS
a
NC/144M
NC/72M
MODE
A
V
NC
A
NC/288M
ZZ
DD
A
NC/36M
TCK
A
V
TMS
TDI
TDO
NC
V
U
DDQ
DDQ
Document #: 38-05555 Rev. *F
Page 4 of 28
CY7C1370D
CY7C1372D
Pin Configurations (continued)
165-Ball FBGA Pinout
CY7C1370D (512K x 36)
1
2
A
3
4
5
6
7
8
9
A
10
A
11
NC
NC/576M
NC/1G
DQPc
ADV/LD
A
B
C
D
CE1
BWc
BWb
CE
CEN
WE
VSS
VSS
3
A
CE2
VDDQ
VDDQ
CLK
VSS
VSS
OE
VSS
VDD
A
A
NC
BWd
VSS
VDD
BWa
VSS
VSS
NC
DQc
VDDQ
VDDQ
NC
DQb
DQPb
DQb
DQc
DQc
DQc
DQc
DQc
NC
VDDQ
VDDQ
VDDQ
NC
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
DQb
DQb
DQb
NC
DQb
E
F
DQc
DQc
NC
VSS
VSS
VSS
VSS
VSS
VSS
DQb
DQb
ZZ
G
H
J
DQd
DQd
DQd
DQd
DQd
DQd
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
DQa
DQa
DQa
DQa
DQa
DQa
K
L
DQd
DQd
NC
VDDQ
VDDQ
A
VDD
VSS
A
VSS
NC
VSS
NC
A1
VSS
NC
VDD
VSS
A
VDDQ
VDDQ
A
DQa
NC
A
DQa
DQPa
M
N
P
DQPd
NC/144M NC/72M
TDI
TDO
NC/288M
MODE
NC/36M
A
A
TMS
A0
TCK
A
A
A
A
R
CY7C1372D (1M x 18)
1
NC/576M
NC/1G
NC
2
A
3
4
5
NC
6
CE
7
8
9
A
10
A
11
A
A
B
C
D
CE1
BWb
NC
CEN
ADV/LD
3
A
CE2
VDDQ
VDDQ
BWa
VSS
VSS
CLK
VSS
VSS
A
A
NC
WE
VSS
VSS
OE
VSS
VDD
NC
DQb
VSS
VDD
VDDQ
VDDQ
NC
NC
DQPa
DQa
NC
NC
NC
DQb
DQb
DQb
NC
VDDQ
VDDQ
VDDQ
NC
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
NC
NC
DQa
DQa
DQa
ZZ
E
F
NC
NC
G
H
J
NC
NC
DQb
DQb
DQb
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
DQa
DQa
DQa
NC
NC
NC
K
L
NC
NC
DQb
NC
NC
VDDQ
VDDQ
A
VDD
VSS
A
VSS
NC
VSS
NC
A1
VSS
NC
VDD
VSS
A
VDDQ
VDDQ
A
DQa
NC
A
NC
NC
M
N
P
DQPb
NC/144M NC/72M
MODE NC/36M
TDI
TDO
NC/288M
A
A
TMS
A0
TCK
A
A
A
A
R
Document #: 38-05555 Rev. *F
Page 5 of 28
CY7C1370D
CY7C1372D
Pin Definitions
Pin Name
I/O Type
Pin Description
Address Inputs used to select one of the address locations. Sampled at the rising edge of
A0
Input-
A1
A
Synchronous the CLK.
BW
Input-
Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the SRAM.
a
BW
BW
BW
Synchronous Sampled on the rising edge of CLK. BW controls DQ and DQP , BW controls DQ and DQP ,
b
c
d
a
a
a
b
b
b
BW controls DQ and DQP , BW controls DQ and DQP .
c
c
c
d
d
d
WE
Input-
Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This
Synchronous signal must be asserted LOW to initiate a write sequence.
ADV/LD
Input- Advance/Load Input used to advance the on-chip address counter or load a new address.
Synchronous When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a
new address can be loaded into the device for an access. After being deselected, ADV/LD should
be driven LOW in order to load a new address.
CLK
Input-
Clock
Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN.
CLK is only recognized if CEN is active LOW.
CE
CE
CE
Input-
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
1
2
3
Synchronous CE and CE to select/deselect the device.
2
3
Input-
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction
Synchronous with CE and CE to select/deselect the device.
1
3
Input-
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
Synchronous CE and CE to select/deselect the device.
1
2
OE
Input-
Output Enable, active LOW. Combined with the synchronous logic block inside the device to
Asynchronous control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs.
When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during
the data portion of a write sequence, during the first clock when emerging from a deselected
state and when the device has been deselected.
CEN
Input-
Clock Enable Input, active LOW. When asserted LOW the clock signal is recognized by the
Synchronous SRAM. When deasserted HIGH the clock signal is masked. Since deasserting CEN does not
deselect the device, CEN can be used to extend the previous cycle when required.
DQ
I/O-
Synchronous by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by A during the previous clock rise of the read cycle. The direction of the pins is
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered
S
[17:0]
controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave
as outputs. When HIGH, DQ –DQ are placed in a tri-state condition. The outputs are automat-
a
d
ically tri-stated during the data portion of a write sequence, during the first clock when emerging
from a deselected state, and when the device is deselected, regardless of the state of OE.
DQP
I/O-
Bidirectional Data Parity I/O lines. Functionally, these signals are identical to DQ . During write
X
s
Synchronous sequences, DQP is controlled by BW , DQP is controlled by BW , DQP is controlled by BW ,
a
a
b
b
c
c
and DQP is controlled by BW .
d
d
MODE
TDO
TDI
Input Strap Pin Mode Input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order.
Pulled LOW selects the linear burst order. MODE should not change states during operation.
When left floating MODE will default HIGH, to an interleaved burst order.
JTAG serial Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK.
output
Synchronous
JTAG serial Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK.
input
Synchronous
TMS
TCK
Test Mode This pin controls the Test Access Port state machine. Sampled on the rising edge of TCK.
Select
Synchronous
JTAG-Clock Clock input to the JTAG circuitry.
V
Power Supply Power supply inputs to the core of the device.
DD
Document #: 38-05555 Rev. *F
Page 6 of 28
CY7C1370D
CY7C1372D
Pin Definitions (continued)
Pin Name
I/O Type
Pin Description
V
V
I/O Power Power supply for the I/O circuitry.
Supply
DDQ
Ground
Ground for the device. Should be connected to ground of the system.
SS
NC
–
–
No connects. This pin is not connected to the die.
NC/(36M,72M,
144M, 288M,
576M, 1G)
These pins are not connected. They will be used for expansion to the 36M, 72M, 144M, 288M,
576M and 1G densities.
ZZ
Input-
ZZ “sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition
Asynchronous with data integrity preserved. During normal operation, this pin can be connected to V or left
SS
floating. ZZ pin has an internal pull-down.
second clock, a subsequent operation (Read/Write/Deselect)
can be initiated. Deselecting the device is also pipelined.
Therefore, when the SRAM is deselected at clock rise by one
of the chip enable signals, its output will tri-state following the
next clock rise.
Introduction
Functional Overview
The CY7C1370D and CY7C1372D are synchronous-pipelined
Burst NoBL SRAMs designed specifically to eliminate wait
states during Write/Read transitions. All synchronous inputs
pass through input registers controlled by the rising edge of
the clock. The clock signal is qualified with the Clock Enable
input signal (CEN). If CEN is HIGH, the clock signal is not
recognized and all internal states are maintained. All
synchronous operations are qualified with CEN. All data
outputs pass through output registers controlled by the rising
edge of the clock. Maximum access delay from the clock rise
Burst Read Accesses
The CY7C1370D and CY7C1372D have an on-chip burst
counter that allows the user the ability to supply a single
address and conduct up to four Reads without reasserting the
address inputs. ADV/LD must be driven LOW in order to load
a new address into the SRAM, as described in the Single Read
Access section above. The sequence of the burst counter is
determined by the MODE input signal. A LOW input on MODE
selects a linear burst mode, a HIGH selects an interleaved
burst sequence. Both burst counters use A0 and A1 in the
burst sequence, and will wrap-around when incremented suffi-
ciently. A HIGH input on ADV/LD will increment the internal
burst counter regardless of the state of chip enables inputs or
WE. WE is latched at the beginning of a burst cycle. Therefore,
the type of access (Read or Write) is maintained throughout
the burst sequence.
(t ) is 2.6 ns (250-MHz device).
CO
Accesses can be initiated by asserting all three Chip Enables
(CE , CE , CE ) active at the rising edge of the clock. If Clock
1
2
3
Enable (CEN) is active LOW and ADV/LD is asserted LOW,
the address presented to the device will be latched. The
access can either be a read or write operation, depending on
the status of the Write Enable (WE). BW can be used to
conduct byte write operations.
X
Write operations are qualified by the Write Enable (WE). All
writes are simplified with on-chip synchronous self-timed write
circuitry.
Single Write Accesses
Write access are initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE , CE ,
Three synchronous Chip Enables (CE , CE , CE ) and an
1
2
1
2
3
and CE are ALL asserted active, and (3) the write signal WE
asynchronous Output Enable (OE) simplify depth expansion.
All operations (Reads, Writes, and Deselects) are pipelined.
ADV/LD should be driven LOW once the device has been
deselected in order to load a new address for the next
operation.
3
is asserted LOW. The address presented is loaded into the
Address Register. The write signals are latched into the
Control Logic block.
On the subsequent clock rise the data lines are automatically
tri-stated regardless of the state of the OE input signal. This
allows the external logic to present the data on DQ and DQP
Single Read Accesses
A read access is initiated when the following conditions are
(DQ
/DQP
for CY7C1370D and DQ /DQP
for
a,b,c,d
a,b,c,d
a,b
a,b
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE , CE ,
CY7C1372D). In addition, the address for the subsequent
access (Read/Write/Deselect) is latched into the Address
Register (provided the appropriate control signals are
asserted).
1
2
and CE are ALL asserted active, (3) the Write Enable input
3
signal WE is deasserted HIGH, and (4) ADV/LD is asserted
LOW. The address presented to the address inputs is latched
into the Address Register and presented to the memory core
and control logic. The control logic determines that a read
access is in progress and allows the requested data to
propagate to the input of the output register. At the rising edge
of the next clock the requested data is allowed to propagate
through the output register and onto the data bus within 2.6 ns
(250-MHz device) provided OE is active LOW. After the first
clock of the read access the output buffers are controlled by
OE and the internal control logic. OE must be driven LOW in
order for the device to drive out the requested data. During the
On the next clock rise the data presented to DQ and DQP
(DQ
/DQP
for CY7C1370D & DQ /DQP
for
a,b,c,d
a,b,c,d
a,b
a,b
CY7C1372D) (or a subset for byte write operations, see Write
Cycle Description table for details) inputs is latched into the
device and the write is complete.
The data written during the write operation is controlled by BW
(BW
signals. The CY7C1370D/CY7C1372D provides byte write
capability that is described in the Write Cycle Description table.
for CY7C1370D and BW
for CY7C1372D)
a,b,c,d
a,b
Document #: 38-05555 Rev. *F
Page 7 of 28
CY7C1370D
CY7C1372D
Asserting the Write Enable input (WE) with the selected Byte
Write Select (BW) input will selectively write to only the desired
bytes. Bytes not selected during a byte write operation will
remain unaltered. A synchronous self-timed write mechanism
has been provided to simplify the write operations. Byte write
capability has been included in order to greatly simplify
Read/Modify/Write sequences, which can be reduced to
simple byte write operations.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
Because the CY7C1370D and CY7C1372D are common I/O
devices, data should not be driven into the device while the
outputs are active. The Output Enable (OE) can be deasserted
HIGH before presenting data to the DQ and DQP
the “sleep” mode. CE , CE , and CE , must remain inactive
1
2
3
for the duration of t
after the ZZ input returns LOW.
ZZREC
Interleaved Burst Address Table
(MODE = Floating or VDD
)
(DQ
/DQP
for CY7C1370D and DQ /DQP
for
a,b,c,d
a,b,c,d
a,b
a,b
CY7C1372D) inputs. Doing so will tri-state the output drivers.
As a safety precaution, DQ and DQP (DQ /DQP for
First
Second
Third
Fourth
Address
Address
Address
Address
a,b,c,d
a,b,c,d
CY7C1370D and DQ /DQP
for CY7C1372D) are
a,b
a,b
A1,A0
00
A1,A0
01
A1,A0
10
A1,A0
11
automatically tri-stated during the data portion of a write cycle,
regardless of the state of OE.
01
00
11
10
Burst Write Accesses
10
11
00
01
The CY7C1370D/CY7C1372D has an on-chip burst counter
that allows the user the ability to supply a single address and
conduct up to four write operations without reasserting the
address inputs. ADV/LD must be driven LOW in order to load
the initial address, as described in the Single Write Access
section above. When ADV/LD is driven HIGH on the subse-
11
10
01
00
Linear Burst Address Table (MODE = GND)
First
Address
Second
Address
Third
Address
Fourth
Address
quent clock rise, the chip enables (CE , CE , and CE ) and
1
2
3
WE inputs are ignored and the burst counter is incremented.
The correct BW (BW for CY7C1370D and BW for
CY7C1372D) inputs must be driven in each cycle of the burst
write in order to write the correct bytes of data.
A1,A0
00
A1,A0
01
A1,A0
10
A1,A0
11
a,b,c,d
a,b
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Sleep mode standby current
Device operation to ZZ
ZZ recovery time
Test Conditions
Min.
Max.
80
Unit
mA
ns
I
t
t
t
t
ZZ > V − 0.2V
DD
DDZZ
ZZ > V − 0.2V
2t
ZZS
DD
CYC
ZZ < 0.2V
2t
ns
ZZREC
ZZI
CYC
ZZ active to sleep current
ZZ Inactive to exit sleep current
This parameter is sampled
This parameter is sampled
2t
ns
CYC
0
ns
RZZI
Document #: 38-05555 Rev. *F
Page 8 of 28
CY7C1370D
CY7C1372D
Truth Table[1, 2, 3, 4, 5, 6, 7]
Address
Used
Operation
Deselect Cycle
CE
H
X
L
ZZ
L
ADV/LD WE BW
OE
CEN CLK
DQ
Tri-State
Tri-State
Data Out (Q)
Data Out (Q)
Tri-State
Tri-State
Data In (D)
Data In (D)
Tri-State
Tri-State
–
x
None
L
H
L
X
X
H
X
H
X
L
X
X
X
X
X
X
L
X
L
L
L
L
L
L
L
L
L
L
H
X
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
X
Continue Deselect Cycle
Read Cycle (Begin Burst)
Read Cycle (Continue Burst)
NOP/Dummy Read (Begin Burst)
Dummy Read (Continue Burst)
Write Cycle (Begin Burst)
Write Cycle (Continue Burst)
NOP/Write Abort (Begin Burst)
Write Abort (Continue Burst)
Ignore Clock Edge (Stall)
Sleep Mode
None
L
X
L
External
Next
L
X
L
L
H
L
L
External
Next
L
H
H
X
X
X
X
X
X
X
L
L
H
L
External
Next
L
X
L
L
H
L
X
L
L
None
L
H
H
X
X
Next
X
X
X
L
H
X
X
X
X
X
Current
None
L
H
Tri-State
Notes:
1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for ALL Chip Enables active. BWx = L signifies at least one Byte Write Select is active, BWx = Valid
signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.
2. Write is defined by WE and BW . See Write Cycle Description table for details.
X
3. When a write cycle is detected, all I/Os are tri-stated, even during byte writes.
4. The DQ and DQP pins are controlled by the current cycle and the OE signal.
5. CEN = H inserts wait states.
6. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles.During a read cycle DQ and DQP = Three-state when OE
s
X
is inactive or when the device is deselected, and DQ = data when OE is active.
s
Document #: 38-05555 Rev. *F
Page 9 of 28
CY7C1370D
CY7C1372D
Partial Write Cycle Description[1, 2, 3, 8]
Function (CY7C1370D)
Read
WE
H
L
BW
X
H
H
H
H
H
H
H
H
L
BW
X
H
H
H
H
L
BW
X
H
H
L
BW
a
d
c
b
X
H
L
Write – No bytes written
Write Byte a – (DQ and DQP )
L
a
a
Write Byte b – (DQ and DQP )
L
H
L
b
b
Write Bytes b, a
Write Byte c – (DQ and DQP )
L
L
L
H
H
L
H
L
c
c
Write Bytes c, a
Write Bytes c, b
Write Bytes c, b, a
L
L
L
L
H
L
L
L
L
Write Byte d – (DQ and DQP )
L
H
H
H
H
L
H
H
L
H
L
d
d
Write Bytes d, a
Write Bytes d, b
Write Bytes d, b, a
Write Bytes d, c
Write Bytes d, c, a
Write Bytes d, c, b
Write All Bytes
L
L
L
L
H
L
L
L
L
L
L
H
H
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
Function (CY7C1372D)
WE
BW
x
BW
x
b
a
Read
H
L
L
L
L
Write – No Bytes Written
Write Byte a – (DQ and DQP )
H
H
L
H
L
a
a
Write Byte b – (DQ and DQP )
H
L
b
b
Write Both Bytes
L
Note:
8. Table only lists a partial listing of the byte write combinations. Any Combination of BW is valid Appropriate write will be done based on which byte write is active.
X
Document #: 38-05555 Rev. *F
Page 10 of 28
CY7C1370D
CY7C1372D
Test Data-In (TDI)
IEEE 1149.1 Serial Boundary Scan (JTAG)
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. TDI
is internally pulled up and can be unconnected if the TAP is
unused in an application. TDI is connected to the most signif-
icant bit (MSB) of any register. (See Tap Controller Block
Diagram.)
The CY7C1370D/CY7C1372D incorporates a serial boundary
scan test access port (TAP). This part is fully compliant with
1149.1. The TAP operates using JEDEC-standard 3.3V or
2.5V I/O logic levels.
The CY7C1370D/CY7C1372D contains a TAP controller,
instruction register, boundary scan register, bypass register,
and ID register.
Disabling the JTAG Feature
Test Data-Out (TDO)
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See Tap Controller State Diagram.)
(V ) to prevent clocking of the device. TDI and TMS are inter-
SS
nally pulled up and may be unconnected. They may alternately
be connected to V through a pull-up resistor. TDO should be
DD
left unconnected. Upon power-up, the device will come up in
a reset state which will not interfere with the operation of the
device.
TAP Controller Block Diagram
0
Bypass Register
TAP Controller State Diagram
2
1
0
0
0
Selection
Circuitry
Instruction Register
31 30 29
Identification Register
Selection
Circuitry
TEST-LOGIC
1
TDI
TDO
RESET
0
.
.
.
2
1
1
1
1
RUN-TEST/
IDLE
SELECT
DR-SCAN
SELECT
IR-SCAN
0
x
.
.
.
.
.
2
1
0
0
1
1
Boundary Scan Register
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
0
TCK
TMS
1
1
1
1
TAP CONTROLLER
EXIT1-DR
EXIT1-IR
0
0
PAUSE-DR
0
PAUSE-IR
0
1
1
Performing a TAP Reset
0
0
EXIT2-DR
1
EXIT2-IR
1
A Reset is performed by forcing TMS HIGH (V ) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and may be performed while the SRAM is operating.
DD
UPDATE-DR
UPDATE-IR
At power-up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
1
0
1
0
TAP Registers
Registers are connected between the TDI and TDO balls and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
The 0/1 next to each state represents the value of TMS at the
rising edge of TCK.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the Tap Controller Block
Diagram. Upon power-up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this ball unconnected if the TAP is not used. The ball is
pulled up internally, resulting in a logic HIGH level.
Document #: 38-05555 Rev. *F
Page 11 of 28
CY7C1370D
CY7C1372D
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board-level serial test data path.
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state.
The IDCODE instruction is loaded into the instruction register
upon power-up or whenever the TAP controller is given a test
logic reset state.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
(V ) when the BYPASS instruction is executed.
SS
Boundary Scan Register
SAMPLE/PRELOAD
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM.
SAMPLE/PRELOAD is a 1149.1-mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the in-
struction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is cap-
tured in the boundary scan register.
The boundary scan register is loaded with the contents of the
RAM I/O ring when the TAP controller is in the Capture-DR
state and is then placed between the TDI and TDO balls when
the controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions can be used
to capture the contents of the I/O ring.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is possi-
ble that during the Capture-DR state, an input or output will
undergo a transition. The TAP may then try to capture a signal
while in transition (metastable state). This will not harm the
device, but there is no guarantee as to the value that will be
captured. Repeatable results may not be possible.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture set-up plus
hold times (t and t ). The SRAM clock input might not be
CS
CH
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK captured in the
boundary scan register.
TAP Instruction Set
Overview
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the bound-
ary scan register between the TDI and TDO pins.
Eight different instructions are possible with the three bit
instruction register. All combinations are listed in the
Instruction Codes table. Three of these instructions are listed
as RESERVED and should not be used. The other five instruc-
tions are described in detail below.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells pri-
or to the selection of another boundary scan test operation.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required—that is, while data
captured is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
EXTEST
The EXTEST instruction enables the preloaded data to be
driven out through the system output pins. This instruction also
selects the boundary scan register to be connected for serial
access between the TDI and TDO in the shift-DR controller
state.
EXTEST Output Bus Tri-State
IEEE Standard 1149.1 mandates that the TAP controller be
able to put the output bus into a tri-state mode.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and allows
The boundary scan register has a special bit located at bit #85
(for 119-BGA package) or bit #89 (for 165-FBGA package).
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the “Update-DR” state
Document #: 38-05555 Rev. *F
Page 12 of 28
CY7C1370D
CY7C1372D
in the TAP controller, it will directly control the state of the
output (Q-bus) pins, when the EXTEST is entered as the
current instruction. When HIGH, it will enable the output
buffers to drive the output bus. When LOW, this bit will place
the output bus into a High-Z condition.
register. When the EXTEST instruction is entered, this bit will
directly control the output Q-bus pins. Note that this bit is
preset HIGH to enable the output when the device is
powered-up, and also when the TAP controller is in the
“Test-Logic-Reset” state.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the “Shift-DR” state. During “Update-DR,” the value
loaded into that shift-register cell will latch into the preload
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
1
2
3
4
5
6
Test Clock
(TCK)
t
t
t
TH
CYC
TL
t
t
t
t
TMSS
TDIS
TMSH
Test Mode Select
(TMS)
TDIH
Test Data-In
(TDI)
t
TDOV
t
TDOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
[9, 10]
TAP AC Switching Characteristics Over the Operating Range
Parameter
Clock
Description
Min.
Max.
Unit
t
t
t
t
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH time
TCK Clock LOW time
50
ns
MHz
ns
TCYC
TF
20
20
20
TH
ns
TL
Output Times
t
t
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
10
ns
ns
TDOV
TDOX
0
Set-up Times
t
t
t
TMS Set-up to TCK Clock Rise
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
5
5
5
ns
ns
ns
TMSS
TDIS
CS
Hold Times
t
t
t
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
5
5
5
ns
ns
ns
TMSH
TDIH
CH
Capture Hold after Clock Rise
Notes:
9. t and t refer to the set-up and hold time requirements of latching data from the boundary scan register.
CS
CH
10. Test conditions are specified using the load in TAP AC test Conditions. t /t = 1 ns.
R
F
Document #: 38-05555 Rev. *F
Page 13 of 28
CY7C1370D
CY7C1372D
3.3V TAP AC Test Conditions
2.5V TAP AC Test Conditions
Input pulse levels ................................................ V to 3.3V
Input pulse levels.................................................V to 2.5V
SS
SS
Input rise and fall times................................................... 1 ns
Input timing reference levels...........................................1.5V
Output reference levels...................................................1.5V
Test load termination supply voltage...............................1.5V
Input rise and fall time .....................................................1 ns
Input timing reference levels......................................... 1.25V
Output reference levels ................................................ 1.25V
Test load termination supply voltage ............................ 1.25V
3.3V TAP AC Output Load Equivalent
2.5V TAP AC Output Load Equivalent
1.5V
1.25V
50Ω
50Ω
TDO
TDO
ZO= 50Ω
ZO= 50Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions
[11]
(0°C < TA < +70°C; VDD = 3.3V ±0.165V unless otherwise noted)
Parameter
Description
Test Conditions
Min.
2.4
2.0
2.9
2.1
Max.
Unit
V
V
V
V
V
V
V
I
Output HIGH Voltage
I
I
I
= –4.0 mA, V
= –1.0 mA, V
= –100 µA
= 3.3V
= 2.5V
OH1
OH
OH
OH
DDQ
DDQ
V
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
V
V
= 3.3V
= 2.5V
V
OH2
OL1
OL2
IH
DDQ
DDQ
V
I
I
I
= 8.0 mA, V
= 8.0 mA, V
= 100 µA
= 3.3V
= 2.5V
0.4
0.4
0.2
0.2
V
OL
OL
OL
DDQ
V
DDQ
V
V
= 3.3V
= 2.5V
V
DDQ
DDQ
V
V
V
V
V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
2.0
1.7
V
V
+ 0.3
V
DDQ
DDQ
DDQ
DDQ
DD
DD
+ 0.3
V
–0.5
–0.3
–5
0.7
V
IL
0.7
5
V
µA
GND < V < V
X
IN
DDQ
Note:
11.All voltages referenced to V (GND).
SS
Document #: 38-05555 Rev. *F
Page 14 of 28
CY7C1370D
CY7C1372D
Identification Register Definitions
Instruction Field
Revision Number (31:29)
Cypress Device ID (28:12)
Cypress JEDEC ID (11:1)
ID Register Presence (0)
CY7C1372D
000
CY7C1370D
Description
Reserved for version number.
000
[12]
01011001000100101 01011001000010101 Reserved for future use.
00000110100
1
00000110100
1
Allows unique identification of SRAM vendor.
Indicate the presence of an ID register.
Scan Register Sizes
Register Name
Bit Size (x18)
Bit Size (x36)
Instruction
Bypass
ID
3
3
1
1
32
85
89
32
85
89
Boundary Scan Order (119-ball BGA package)
Boundary Scan Order (165-ball FBGA package)
Identification Codes
Instruction
EXTEST
Code
Description
000 Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state.
IDCODE
001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This
operation does not affect SRAM operations.
SAMPLE Z
010 Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011 Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD 100 Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
RESERVED
RESERVED
BYPASS
101 Do Not Use: This instruction is reserved for future use.
110 Do Not Use: This instruction is reserved for future use.
111 Places the bypass register between TDI and TDO. This operation does not affect SRAM opera-
tions.
Note:
12. Bit #24 is “1” in the Register Definitions for both 2.5Vand 3.3V versions of this device.
Document #: 38-05555 Rev. *F
Page 15 of 28
CY7C1370D
CY7C1372D
119-Ball BGA Boundary Scan Order [13, 14]
Bit #
1
Ball ID
Bit #
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
Ball ID
F6
Bit #
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
Ball ID
G4
A4
G3
C3
B2
B3
A3
C2
A2
B1
C1
D2
E1
F2
Bit #
Ball ID
L1
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
H4
T4
T5
T6
R5
L5
2
E7
D7
H7
G6
E6
D6
C7
B7
C6
A6
C5
B5
G5
B6
D4
B4
F4
M2
N1
3
4
P1
5
K1
6
L2
7
R6
U6
R7
T7
P6
N7
M6
L7
N2
P2
8
9
R3
10
11
12
13
14
15
16
17
18
19
20
21
22
T1
R1
T2
L3
R2
K6
P7
N6
L6
G1
H2
D1
E2
G2
H1
J3
T3
L4
N4
P4
K7
J5
M4
A5
K4
E4
Internal
H6
G7
2K
Notes:
13. Balls which are NC (No Connect) are pre-set LOW.
14. Bit# 85 is pre-set HIGH.
Document #: 38-05555 Rev. *F
Page 16 of 28
CY7C1370D
CY7C1372D
165-Ball BGA Boundary Scan Order [13, 15]
Bit #
1
Ball ID
N6
Bit #
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
Ball ID
D10
C11
A11
B11
A10
B10
A9
Bit #
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
Ball ID
G1
D2
E2
2
N7
3
N10
P11
P8
4
F2
5
G2
H1
H3
J1
6
R8
7
R9
8
P9
B9
9
P10
R10
R11
H11
N11
M11
L11
K11
J11
M10
L10
K10
J10
H9
C10
A8
K1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
L1
B8
M1
J2
A7
B7
K2
B6
L2
A6
M2
N1
N2
P1
B5
A5
A4
B4
R1
R2
P3
B3
A3
A2
R3
P2
H10
G11
F11
E11
D11
G10
F10
E10
B2
C2
R4
P4
B1
A1
N5
P6
C1
D1
R6
Internal
E1
F1
Note:
15. Bit# 89 is pre-set HIGH.
Document #: 38-05555 Rev. *F
Page 17 of 28
CY7C1370D
CY7C1372D
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Storage Temperature .................................–65°C to +150°C
Latch-up Current.................................................... > 200 mA
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Operating Range
Supply Voltage on V Relative to GND........ –0.5V to +4.6V
DD
Ambient
Supply Voltage on V
Relative to GND ......–0.5V to +V
Range
Temperature
V
V
DDQ
DDQ
DD
DD
DC to Outputs in Tri-State................... –0.5V to V
+ 0.5V
Commercial 0°C to +70°C 3.3V–5%/+10% 2.5V –5% to
DDQ
V
DD
DC Input Voltage....................................–0.5V to V + 0.5V
Industrial
–40°C to +85°C
DD
[16, 17]
Electrical Characteristics Over the Operating Range
Parameter
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
3.135
3.135
2.375
2.4
Max.
Unit
V
3.6
V
V
DD
V
V
V
V
V
I
for 3.3V I/O
for 2.5V I/O
V
DD
DDQ
2.625
V
Output HIGH Voltage
Output LOW Voltage
for 3.3V I/O, I = –4.0 mA
V
OH
OL
IH
OH
for 2.5V I/O, I = –1.0 mA
2.0
V
OH
for 3.3V I/O, I = 8.0 mA
0.4
0.4
V
OL
for 2.5V I/O, I = 1.0 mA
V
OL
[16]
Input HIGH Voltage
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
2.0
1.7
V
V
+ 0.3V
+ 0.3V
0.8
V
DD
DD
V
[16]
Input LOW Voltage
–0.3
–0.3
–5
V
IL
0.7
V
Input Leakage Current GND ≤ V ≤ V
except ZZ and MODE
5
µA
X
I
DDQ
Input Current of MODE Input = V
–30
–5
µA
µA
SS
Input = V
5
DD
Input Current of ZZ
Input = V
Input = V
µA
SS
DD
30
5
µA
I
I
Output Leakage Current GND ≤ V ≤ V
Output Disabled
–5
µA
OZ
I
DDQ,
V
Operating Supply
V
f = f
= Max., I
= 0 mA,
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 167 MHz
350
300
275
160
150
140
70
mA
mA
mA
mA
mA
mA
mA
DD
DD
DD
OUT
= 1/t
CYC
MAX
I
Automatic CE
Power-down
Current—TTL Inputs
Max. V , Device Deselected, 4-ns cycle, 250 MHz
DD
SB1
V
≥ V or V ≤ V , f = f
=
IN
IH
IN
IL
MAX
5-ns cycle, 200 MHz
6-ns cycle, 167 MHz
1/t
CYC
I
I
Automatic CE
Power-down
Current—CMOS Inputs f = 0
Max. V , Device Deselected, All speed grades
DD
SB2
V
≤ 0.3V or V > V
− 0.3V,
IN
IN
DDQ
Automatic CE
Power-down
Current—CMOS Inputs f = f
Max. V , Device Deselected, 4-ns cycle, 250 MHz
135
130
125
80
mA
mA
mA
mA
SB3
DD
V
≤ 0.3V or V > V
− 0.3V,
IN
IN
CYC
DDQ
5-ns cycle, 200 MHz
6-ns cycle, 167 MHz
= 1/t
MAX
I
Automatic CE
Max. V , Device Deselected, All speed grades
DD
SB4
Power-down
Current—TTL Inputs
V
≥ V or V ≤ V , f = 0
IN
IH
IN
IL
Notes:
16. Overshoot: V (AC) < V +1.5V (Pulse width less than t
/2), undershoot: V (AC)> –2V (Pulse width less than t /2).
CYC
IH
DD
CYC
IL
17. T
: Assumes a linear ramp from 0V to V (min.) within 200 ms. During this time V < V and V
< V
.
Power-up
DD
IH
DD
DDQ
DD
Document #: 38-05555 Rev. *F
Page 18 of 28
CY7C1370D
CY7C1372D
Capacitance[18]
100 TQFP
Max.
119 BGA
Max.
165 FBGA
Parameter
Description
Test Conditions
Max.
Unit
pF
C
C
C
Input Capacitance
T = 25°C, f = 1 MHz,
5
5
5
8
8
8
9
9
9
IN
A
V
= 3.3V.
DD
Clock Input Capacitance
Input/Output Capacitance
pF
CLK
I/O
V
= 2.5V
DDQ
pF
Thermal Resistance[18]
100 TQFP
Package
119 BGA
Package
165 FBGA
Package
Parameter
Description
Test Conditions
Unit
Θ
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard
test methods and procedures
for measuring thermal
28.66
23.8
20.7
°C/W
JA
Θ
Thermal Resistance
(Junction to Case)
4.08
6.2
4.0
°C/W
JC
impedance, per EIA/JESD51.
AC Test Loads and Waveforms
3.3V I/O Test Load
R = 317Ω
3.3V
OUTPUT
R = 50Ω
OUTPUT
ALL INPUT PULSES
90%
VDDQ
GND
90%
10%
Z = 50Ω
0
10%
L
5 pF
R = 351Ω
≤ 1 ns
≤ 1 ns
V = 1.5V
T
INCLUDING
JIG AND
SCOPE
(c)
(a)
(b)
2.5V I/O Test Load
R = 1667Ω
2.5V
OUTPUT
R = 50Ω
OUTPUT
ALL INPUT PULSES
90%
VDDQ
GND
90%
10%
Z = 50Ω
0
10%
L
5 pF
R = 1538Ω
≤ 1 ns
≤ 1 ns
V = 1.25V
T
INCLUDING
JIG AND
SCOPE
(c)
(a)
(b)
Note:
18. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05555 Rev. *F
Page 19 of 28
CY7C1370D
CY7C1372D
[23, 24]
Switching Characteristics Over the Operating Range
–250
–200
–167
Parameter
Description
Min.
Max.
Min.
Max.
Min.
Max.
Unit
[19]
t
V
(typical) to the first access read or write
1
1
1
ms
Power
CC
Clock
t
Clock Cycle Time
Maximum Operating Frequency
Clock HIGH
4.0
5
6
ns
MHz
ns
CYC
F
250
200
167
MAX
t
t
1.7
1.7
2.0
2.0
2.2
2.2
CH
CL
Clock LOW
ns
Output Times
t
t
t
t
t
t
t
Data Output Valid After CLK Rise
OE LOW to Output Valid
2.6
2.6
3.0
3.0
3.4
3.4
ns
ns
ns
ns
ns
ns
ns
CO
EOV
DOH
CHZ
CLZ
Data Output Hold After CLK Rise
1.0
1.0
0
1.3
1.3
0
1.3
1.3
0
[20, 21, 22]
Clock to High-Z
2.6
2.6
3.0
3.0
3.4
3.4
[20, 21, 22]
Clock to Low-Z
[20, 21, 22]
OE HIGH to Output High-Z
EOHZ
EOLZ
[20, 21, 22]
OE LOW to Output Low-Z
Set-up Times
t
t
t
t
t
t
Address Set-up Before CLK Rise
Data Input Set-up Before CLK Rise
CEN Set-up Before CLK Rise
1.2
1.2
1.2
1.2
1.2
1.2
1.4
1.4
1.4
1.4
1.4
1.4
1.5
1.5
1.5
1.5
1.5
1.5
ns
ns
ns
ns
ns
ns
AS
DS
CENS
WES
ALS
CES
WE, BW Set-up Before CLK Rise
x
ADV/LD Set-up Before CLK Rise
Chip Select Set-up
Hold Times
t
t
t
t
t
t
Address Hold After CLK Rise
Data Input Hold After CLK Rise
CEN Hold After CLK Rise
0.3
0.3
0.3
0.3
0.3
0.3
0.4
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
AH
DH
CENH
WEH
ALH
CEH
WE, BW Hold After CLK Rise
x
ADV/LD Hold after CLK Rise
Chip Select Hold After CLK Rise
Notes:
19. This part has a voltage regulator internally; t
is the time power needs to be supplied above V minimum initially, before a Read or Write operation can be
DD
Power
initiated.
20. t
, t
, t
, and t
are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
CHZ CLZ EOLZ
EOHZ
21. At any given voltage and temperature, t
is less than t
and t
is less than t
to eliminate bus contention between SRAMs when sharing the same
CLZ
EOHZ
EOLZ
CHZ
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
22. This parameter is sampled and not 100% tested.
23. Timing reference is 1.5V when V
= 3.3V and is 1.25V when V
= 2.5V.
DDQ
DDQ
24. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05555 Rev. *F
Page 20 of 28
CY7C1370D
CY7C1372D
Switching Waveforms
[25, 26, 27]
Read/Write/Timing
1
2
3
4
5
6
7
8
9
10
t
CYC
t
CLK
t
t
t
CENS CENH
CL
CH
CEN
t
t
CES
CEH
CE
ADV/LD
WE
BWx
A1
A2
A4
CO
A3
A5
A6
A7
ADDRESS
t
t
t
t
DS
DH
t
t
t
DOH
OEV
CLZ
CHZ
t
t
AS
AH
Data
D(A1)
D(A2)
D(A2+1)
Q(A3)
Q(A4)
Q(A4+1)
D(A5)
Q(A6)
In-Out (DQ)
t
OEHZ
t
DOH
t
OELZ
OE
WRITE
D(A1)
WRITE
D(A2)
BURST
WRITE
READ
Q(A3)
READ
Q(A4)
BURST
READ
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
D(A2+1)
Q(A4+1)
DON’T CARE
UNDEFINED
Notes:
25. For this waveform ZZ is tied LOW.
26. When CE is LOW, CE is LOW, CE is HIGH and CE is LOW. When CE is HIGH,CE is HIGH or CE is LOW or CE is HIGH.
1
2
3
1
2
3
27. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional.
Document #: 38-05555 Rev. *F
Page 21 of 28
CY7C1370D
CY7C1372D
Switching Waveforms (continued)
[25, 26, 28]
NOP,STALL and DESELECT Cycles
1
2
3
4
5
6
7
8
9
10
CLK
CEN
CE
ADV/LD
WE
BWx
A1
A2
A3
A4
A5
ADDRESS
t
CHZ
D(A4)
D(A1)
Q(A2)
Q(A3)
Q(A5)
Data
In-Out (DQ)
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
WRITE
D(A4)
STALL
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
DON’T CARE
UNDEFINED
[29, 30]
ZZ Mode Timing
CLK
ZZ
t
t
ZZ
ZZREC
t
ZZI
I
SUPPLY
I
DDZZ
t
RZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Outputs (Q)
High-Z
DON’T CARE
Notes:
28. The Ignore Clock Edge or Stall cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle.
29. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device.
30. I/Os are in High-Z when exiting ZZ sleep mode.
Document #: 38-05555 Rev. *F
Page 22 of 28
CY7C1370D
CY7C1372D
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
CY7C1370D-167AXC
CY7C1372D-167AXC
CY7C1370D-167BGC
CY7C1372D-167BGC
Part and Package Type
167
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Commercial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1370D-167BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1372D-167BGXC
CY7C1370D-167BZC
CY7C1372D-167BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1370D-167BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1372D-167BZXC
CY7C1370D-167AXI
CY7C1372D-167AXI
CY7C1370D-167BGI
CY7C1372D-167BGI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Industrial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1370D-167BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1372D-167BGXI
CY7C1370D-167BZI
CY7C1372D-167BZI
CY7C1370D-167BZXI
CY7C1372D-167BZXI
CY7C1370D-200AXC
CY7C1372D-200AXC
CY7C1370D-200BGC
CY7C1372D-200BGC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
200
Commercial
CY7C1370D-200BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1372D-200BGXC
CY7C1370D-200BZC
CY7C1372D-200BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1370D-200BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1372D-200BZXC
CY7C1370D-200AXI
CY7C1372D-200AXI
CY7C1370D-200BGI
CY7C1372D-200BGI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Industrial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1370D-200BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1372D-200BGXI
CY7C1370D-200BZI
CY7C1372D-200BZI
CY7C1370D-200BZXI
CY7C1372D-200BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
Document #: 38-05555 Rev. *F
Page 23 of 28
CY7C1370D
CY7C1372D
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
250
CY7C1370D-250AXC
CY7C1372D-250AXC
CY7C1370D-250BGC
CY7C1372D-250BGC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Commercial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1370D-250BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1372D-250BGXC
CY7C1370D-250BZC
CY7C1372D-250BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1370D-250BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1372D-250BZXC
CY7C1370D-250AXI
CY7C1372D-250AXI
CY7C1370D-250BGI
CY7C1372D-250BGI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Industrial
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1370D-250BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1372D-250BGXI
CY7C1370D-250BZI
CY7C1372D-250BZI
CY7C1370D-250BZXI
CY7C1372D-250BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
Document #: 38-05555 Rev. *F
Page 24 of 28
CY7C1370D
CY7C1372D
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050)
16.00 0.20
14.00 0.10
1.40 0.05
100
81
80
1
0.30 0.08
0.65
TYP.
12° 1°
(8X)
SEE DETAIL
A
30
51
31
50
0.20 MAX.
1.60 MAX.
R 0.08 MIN.
0.20 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
NOTE:
1. JEDEC STD REF MS-026
0.25
GAUGE PLANE
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
R 0.08 MIN.
0.20 MAX.
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0°-7°
0.60 0.15
0.20 MIN.
51-85050-*B
1.00 REF.
DETAIL
A
Document #: 38-05555 Rev. *F
Page 25 of 28
CY7C1370D
CY7C1372D
Package Diagrams (continued)
119-Ball BGA (14 x 22 x 2.4 mm) (51-85115)
Ø0.05 M C
Ø0.25 M C A B
A1 CORNER
Ø0.75 0.15(119X)
Ø1.00(3X) REF.
1
2
3
4
5
6
7
7
6
5
4
3
2
1
A
B
C
D
E
A
B
C
D
E
F
F
G
H
G
H
J
K
L
J
K
L
M
N
P
R
T
M
N
P
R
T
U
U
1.27
0.70 REF.
A
3.81
12.00
7.62
B
14.00 0.20
0.15(4X)
30° TYP.
51-85115-*B
SEATING PLANE
C
Document #: 38-05555 Rev. *F
Page 26 of 28
CY7C1370D
CY7C1372D
Package Diagrams (continued)
165-Ball FBGA (13 x 15 x 1.4 mm) (51-85180)
BOTTOM VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
PIN 1 CORNER
Ø0.25 M C A B
-0.06
Ø0.50
(165X)
+0.14
1
2
3
4
5
6
7
8
9
10
11
11 10
9
8
7
6
5
4
3
2
1
A
A
B
B
C
D
C
D
E
E
F
F
G
G
H
J
H
J
K
K
L
L
M
M
N
P
R
N
P
R
A
A
1.00
5.00
10.00
13.00 0.10
B
B
13.00 0.10
0.15(4X)
NOTES :
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDECREFERENCE: MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
SEATING PLANE
C
51-85180-*A
ZBT is a trademark of Integrated Device Technology, Inc. NoBL and No Bus Latency are trademarks of Cypress Semiconductor
Corporation. All products and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05555 Rev. *F
Page 27 of 28
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1370D
CY7C1372D
Document History Page
Document Title: CY7C1372D/CY7C1370D 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture
Document Number: 38-05555
Orig. of
REV.
**
ECN No. Issue Date Change
Description of Change
254509
276690
See ECN
See ECN
RKF
VBL
New data sheet
*A
Changed TQFP pkg to Lead-free TQFP in Ordering Information section
Added comment of Lead-free BG and BZ packages availability
*B
*C
288531
See ECN
SYT
Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for
non-compliance with 1149.1
Added lead-free information for 100-pin TQFP, 119 BGA and 165 FBGA
Packages
326078
See ECN
PCI
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Added description on EXTEST Output Bus Tri-State
Changed description on the Tap Instruction Set Overview and Extest
Changed Θ and Θ for TQFP Package from 31 and 6 °C/W to 28.66 and
JA
JC
4.08 °C/W respectively
Changed Θ and Θ for BGA Package from 45 and 7 °C/W to 23.8 and 6.2
JA
JC
°C/W respectively
Changed Θ and Θ for FBGA Package from 46 and 3 °C/W to 20.7 and
JA
JC
4.0 °C/W respectively
Modified V test conditions
V
OL, OH
Removed shading from AC/DC Table and Selection Guide
Removed comment of ‘Lead-free BG packages availability’ below the
Ordering Information
Updated Ordering Information Table
Changed from Preliminary to final
*D
*E
370734
416321
See ECN
See ECN
PCI
Modified test condition in note# 17 from V
Converted from preliminary to final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the
Electrical Characteristics Table
< V to V
≤ V
DDQ
DD
DDQ DD
NXR
Changed three-state to tri-state
Changed the I current values of MODE on page # 18 from –5 µA and 30 µA
X
to –30 µA and 5 µA
Changed the I current values of ZZ on page # 18 from –30 µA and 5 µA
X
to –5 µA and 30 µA
Changed V < V to V < V on page # 18
IH
DD
IH
DD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*F
475677
See ECN
VKN
Added the Maximum Rating for Supply Voltage on V
Relative to GND
DDQ
Changed t , t from 25 ns to 20 ns and t
from 5 ns to 10 ns in TAP
TH TL
TDOV
AC Switching Characteristics table.
Updated the Ordering Information table.
Document #: 38-05555 Rev. *F
Page 28 of 28
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