INTEGRATED CIRCUITS
DATA SHEET
TDA8571J
4 × 40 W BTL quad car radio power
amplifier
Product specification
2002 Mar 05
Supersedes data of 1998 Mar 13
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
BLOCK DIAGRAM
V
V
V
V
MODE
15
P1
1
P2
8
P3
16
P4
23
10
IN1
+
−
2
4
OUT1+
30 kΩ
+
−
OUT1−
V
ref
11
IN2
+
−
7
OUT2+
30 kΩ
+
−
5
9
OUT2−
12
13
SGND
IN3
V
TDA8571J
30 kΩ
DIAGNOSTIC
DIAG
+
−
17
OUT3+
+
−
19
OUT3−
V
ref
14
IN4
+
−
22
20
OUT4+
30 kΩ
+
−
OUT4−
3
6
18
21
MGM562
PGND1 PGND2 PGND3 PGND4
Fig.1 Block diagram.
3
2002 Mar 05
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
PINNING
SYMBOL
VP1
PIN
DESCRIPTION
supply voltage 1
handbook, halfpage
V
1
2
3
4
5
6
7
8
9
P1
1
2
OUT1+
PGND1
OUT1−
OUT2−
PGND2
OUT2+
OUT1+
PGND1
OUT1−
OUT2−
PGND2
OUT2+
VP2
output 1+
3
power ground 1
output 1−
output 2−
power ground 2
output 2+
4
5
6
7
8
supply voltage 2
diagnostic output
input 1
V
P2
VDIAG
IN1
9
V
10
11
12
13
14
15
16
17
18
19
20
21
22
23
DIAG
IN2
input 2
IN1 10
IN2 11
SGND
IN3
signal ground
input 3
TDA8571J
SGND 12
IN3 13
IN4
input 4
MODE
VP3
mode select switch input
supply voltage 3
output 3+
IN4 14
MODE 15
OUT3+
PGND3
OUT3−
OUT4−
PGND4
OUT4+
VP4
V
16
power ground 3
output 3−
output 4−
power ground 4
output 4+
P3
OUT3+ 17
PGND3 18
OUT3− 19
OUT4− 20
PGND4 21
OUT4+ 22
supply voltage 4
V
23
P4
MGM563
Fig.2 Pin configuration.
2002 Mar 05
4
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
FUNCTIONAL DESCRIPTION
SHORT-CIRCUIT DIAGNOSTIC
The TDA8571J contains four identical amplifiers which can
be used for bridge applications. The gain of each amplifier
is fixed at 34 dB.
When a short-circuit occurs at one or more outputs to
ground or to the supply voltage, the output stages are
switched off until the short-circuit is removed and the
device is switched on again, with a delay of approximately
10 ms after removal of the short-circuit. During this
short-circuit condition, pin VDIAG is continuously LOW.
Mode select switch (pin MODE)
• Standby: low supply current (<100 µA)
• Mute: input signal suppressed
When a short-circuit occurs across the load of one or more
channels, the output stages are switched off during
approximately 10 ms. After that time it is checked during
approximately 50 µs to determine whether the short-circuit
is still present. Due to this duty cycle of 50 µs/10 ms the
average current consumption during this short-circuit
condition is very low.
• Operating: normal on condition.
Since this pin has a low input current (<80 µA), a low cost
supply switch can be applied.
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during ≥150 ms (charging of the input
capacitors at pins IN1, IN2, IN3 and IN4. When switching
from standby to mute, the slope should be at least 18 V/s.
This can be realized by:
During this short-circuit condition, pin VDIAG is LOW for
10 ms and HIGH for 50 µs (see Fig.5). The protection
circuits of all channels are coupled. This means that if a
short-circuit condition occurs in one of the channels, all
channels are switched off. Consequently, the power
dissipation in any short-circuit condition is very low.
• Microprocessor control
• External timing circuit (see Fig.3).
Diagnostic output (pin VDIAG
)
TEMPERATURE PRE-WARNING
DYNAMIC DISTORTION DETECTOR (DDD)
When the virtual junction temperature Tvj reaches 145 °C,
pin VDIAG goes LOW.
At the onset of clipping of one or more output stages, the
dynamic distortion detector becomes active and pin VDIAG
goes LOW. This information can be used to drive a sound
processor or DC volume control to attenuate the input
signal and so limit the distortion. The output level of
pin VDIAG is independent of the number of channels that
are clipping (see Fig.4).
OPEN-COLLECTOR OUTPUTS
The diagnostic pin has an open-collector output, so more
devices can be tied together. An external pull-up resistor is
needed.
MGG155
handbook, halfpage
V
o
+V
P
handbook, halfpage
0
10 kΩ
MODE
47 µF
V
9
BZX79C/3.9V
V
P
MGD959
0
t
Fig.3 Mode select switch circuitry.
Fig.4 Distortion detector waveform.
2002 Mar 05
5
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
short
circuit
MGG156
current
t
short-circuit over the load
V
9
10 ms
V
P
t
50 µs
Fig.5 Short-circuit waveform.
2002 Mar 05
6
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VP
PARAMETER
supply voltage
CONDITIONS
operating
MIN.
MAX.
UNIT
−
−
−
18
30
45
V
V
V
non-operating
load dump protection;
during 50 ms; tr ≥ 2.5 ms
Vsc(safe)
Vrp
short-circuit safe voltage
reverse polarity voltage
non-repetitive peak output current
repetitive peak output current
total power dissipation
−
−
−
−
−
−55
−40
−
18
6
V
V
IOSM
IORM
Ptot
10
A
7.5
A
60
W
°C
°C
°C
Tstg
storage temperature
+150
+85
150
Tamb
Tvj
ambient temperature
virtual junction temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case (see Fig.6)
40
1
K/W
K/W
virtual junction
OUT2 OUT3
handbook, halfpage
OUT1
OUT4
3.2 K/W
3.2 K/W
3.2 K/W
3.2 K/W
0.2 K/W
case
MGG157
Fig.6 Equivalent thermal resistance network.
2002 Mar 05
7
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
QUALITY SPECIFICATION
In accordance with “General Quality Specification For Integrated Circuits (SNW-FQ-611D)”.
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VP
supply voltage
quiescent current
note 1
6
14.4
200
18
V
Iq(tot)
RL = ∞
−
360
mA
Operating condition
VMODE
IMODE
VO
mode select switch level
8.5
−
−
−
30
7.0
Vp
80
−
V
mode select switch current
output voltage
VMODE = 14.4 V
note 2
µA
V
Mute condition
VMODE
VO
mode select switch level
output voltage
3.3
−
−
−
7.0
−
6.4
−
80
80
V
note 2
V
VOS
DC output offset voltage
delta DC output offset voltage
MUTE
mV
mV
∆VOS
ON ↔ MUTE
−
−
Standby condition
VMODE mode select switch level
Istb
0
−
0.2
2
V
standby current
−
100
µA
Diagnostic
VDIAG
Tvj
diagnostic output voltage
temperature pre-warning
during any fault condition
VDIAG = 0.6 V
−
−
−
145
0.6
V
−
°C
Notes
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
2. At 18 V < VP < 30 V the DC output voltage ≤ 1⁄2VP.
2002 Mar 05
8
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
Po
PARAMETER
output power
CONDITIONS
THD = 0.5%
MIN.
16
TYP.
19
MAX.
UNIT
−
W
THD = 10%
21
−
−
26
−
−
−
−
W
W
W
W
VP = 13.7 V; THD = 0.5%
VP = 13.7 V; THD = 10%
17.5
23
Po(EIAJ)
Po(max)
THD
EIAJ output power
THD = maximum;Vi = 2 V (p-p) 35
square wave
40
maximum output power
total harmonic distortion
THD = maximum; VP = 15.2 V; 40
Vi = 2 V (p-p) square wave
45
−
W
Po = 1 W
−
−
−
0.1
10
−
−
−
%
VMODE = 0.6 V; note 1
%
Bp
power bandwidth
THD = 0.5%; Po = −1 dB with
20 to
20000
Hz
respect to 16 W
fro(l)
low frequency roll-off
high frequency roll-off
closed-loop voltage gain
at −1 dB; note 2
at −1 dB
−
20
33
25
−
−
−
Hz
fro(h)
kHz
dB
Gv(cl)
SVRR
34
35
supply voltage ripple rejection Rs = 0 Ω; maximum ripple
Vripple = 2 V (p-p)
on
40
50
80
25
−
−
−
30
−
−
−
38
dB
dB
dB
kΩ
mute
standby
Zi
input impedance
Vn(o)
noise output voltage
B = 20 Hz to 20 kHz
on; Rs = 0 Ω
−
−
−
45
−
125
150
100
−
−
−
170
−
−
−
1
µV
µV
µV
dB
dB
mV
on; Rs = 10 kΩ
mute; independent of Rs
Po = 16 W; Rs = 10 kΩ
αcs
∆Gv
Vo
channel separation
channel unbalance
output signal in mute
maximum input voltage
Vi = 1 V (RMS)
−
2
Notes
1. Dynamic Distortion Detector (DDD) active, pin VDIAG is set to LOW level.
2. Frequency response externally fixed.
2002 Mar 05
9
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
TEST AND APPLICATION INFORMATION
V
MODE
P
+14.4 V
2200 µF
100 nF
V
1
V
8
V
V
P1
P2
P3
16
P4
23
15
10
IN1
input 1
input 2
input 3
input 4
+
−
2
4
OUT1+
470 nF
30 kΩ
R
L
= 4 Ω
+
−
OUT1−
V
ref
11
IN2
+
−
7
OUT2+
470 nF
30 kΩ
R
= 4 Ω
L
+
−
OUT2−
5
9
10 kΩ
+V
P
12
13
SGND
IN3
V
DIAG
diagnostic
output
TDA8571J
DIAGNOSTIC
+
−
17
OUT3+
470 nF
30 kΩ
R
L
= 4 Ω
+
−
OUT3−
19
V
ref
14
IN4
+
−
22
20
OUT4+
470 nF
30 kΩ
R
L
= 4 Ω
+
−
OUT4−
3
6
18
21
PGND1 PGND2 PGND3 PGND4
MGM564
power ground (substrate)
Special care must be taken in the PCB-layout to separate pin VDIAG from the pins IN1, IN2, IN3 and IN4 to minimize the crosstalk between the clip output
and the inputs.
To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during a period of ≥ 150 ms (charging the input capacitors at pins IN1,
IN2, IN3 and IN4).
Fig.7 Application circuit diagram.
2002 Mar 05
10
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
Test information
Figures 8 to 13 have the following conditions: VP = 14.4 V; RL = 4 Ω; f = 1 kHz; 80 kHz filter used; unless otherwise
specified.
MGM567
MGM566
80
300
handbook, halfpage
handbook, halfpage
P
o
(W)
I
P
(mA)
60
200
40
20
(1)
100
(2)
(3)
0
8
0
0
10
12
14
16
18
4
8
12
16
20
V
(V)
V
(V)
P
P
(1) EIAJ; 100 Hz.
(2) THD + N = 10%.
(3) THD + N = 0.5%.
Fig.8 IP as a function of VP.
Fig.9 Po as a function of VP.
MGM568
MGM569
10
10
handbook, halfpage
handbook, halfpage
THD + N
(%)
THD + N
(%)
1
1
(1)
(2)
(1)
−1
10
−1
10
(2)
(3)
−2
10
−2
10
−2
−1
2
10
10
1
10
10
2
3
4
5
10
10
10
10
10
P
(W)
f (Hz)
o
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
(1) Po = 1 W.
(2) Po = 10 W.
Fig.10 THD + N as a function of Po.
Fig.11 THD + N as a function of frequency.
2002 Mar 05
11
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
MGM570
MGM565
−20
−30
handbook, halfpage
handbook, halfpage
α
(dB)
cs
SVRR
(dB)
(1)
−40
−50
(2)
−60
−70
−90
−80
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
(1) Between channels 1 and 2 or between channels 3 and 4.
(2) Between channels 1 or 2 and channels 3 or 4.
Fig.13 Channel separation as a function of
frequency.
Fig.12 SVRR as a function of frequency.
2002 Mar 05
12
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
PCB layout
111.76
78.74
Pgnd
100 nF
2200 µF
V
P
−
−
−
out 4
out1
+
+
470 nF
470 nF
−
−
out 3
+
out2
+
diag
in
sgnd
in
mode
10 kΩ
1
2
3
4
MGK079
Dimensions in mm.
Fig.14 PCB layout (component side).
13
2002 Mar 05
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
111.76
78.74
Pgnd
100nF
2200 µF
V
P
−
−
−
out 4
out1
+
+
−
470 nF
470 nF
−
out 3
+
out2
+
mode
in
sgnd
in
diag
10 kΩ
4
3
2
1
MGK080
Dimensions in mm.
Fig.15 PCB layout (soldering side).
14
2002 Mar 05
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
PACKAGE OUTLINE
DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)
SOT411-1
non-concave
D
h
x
D
E
h
view B: mounting base side
A
2
d
A
A
5
4
β
E
2
B
j
E
E
1
L
2
L
L
3
1
L
c
2
Q
v
M
1
23
e
m
e
w
M
1
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT A
A
A
b
c
D
d
D
E
e
e
e
E
E
E
j
L
L
L
L
3
m
Q
v
w
x
β
Z
2
4
5
p
h
1
2
h
1
2
1
2
4.6 1.15 1.65 0.75 0.55 30.4 28.0
4.3 0.85 1.35 0.60 0.35 29.9 27.5
12.2
11.8
10.15 6.2 1.85 3.6 14.0 10.7 2.4
9.85 5.8 1.65 2.8 13.0 9.9 1.6
1.43
0.78
2.1
1.8
6
mm
12
2.54 1.27 5.08
4.3
0.6 0.25 0.03 45°
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
96-10-11
98-02-20
SOT411-1
2002 Mar 05
15
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
SOLDERING
The total contact time of successive solder waves must not
exceed 5 seconds.
Introduction to soldering through-hole mount
packages
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
300 and 400 °C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2002 Mar 05
16
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Mar 05
17
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
NOTES
2002 Mar 05
18
Philips Semiconductors
Product specification
4 × 40 W BTL quad car radio power
amplifier
TDA8571J
NOTES
2002 Mar 05
19
Philips Semiconductors – a worldwide company
Contact information
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/02/pp20
Date of release: 2002 Mar 05
Document order number: 9397 750 09411
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