Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
DESCRIPTION
QUICK REFERENCE DATA
Monolithic dual channel high side
protected power switch in
TOPFET2 technology assembled in
a 7 pin plastic surface mount
package.
SYMBOL
PARAMETER
MIN.
UNIT
IL
Nominal load current (ISO)
8
A
SYMBOL
PARAMETER
MAX.
UNIT
APPLICATIONS
VBG
IL
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance, Tj = 25˚C
50
16
150
40
V
A
˚C
mΩ
General purpose switch for driving
lamps, motors, solenoids, heaters.
Tj
RON
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
INPUT 1
BATT
INPUT 2
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
Off-state open circuit
STATUS
LOAD 1
CONTROL &
PROTECTION
CIRCUITS
load detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
LOAD 2
GROUND
RG
Fig.1. Elements of the TOPFET dual HSS with internal ground resistor.
PINNING - SOT427
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
mb
1
2
3
4
5
6
7
load 1
B
ground
I1
I2
L1
L2
input 1
DUAL
HSTF
connected to mb
status
S
G
input 2
load 2
1 2 3 4 5 6 7
mb battery
Fig. 2.
Fig. 3.
CONVENTION
Positive currents flow into pins, except for load and ground pins.
September 2001
1
Rev 1.000
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Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
THERMAL CHARACTERISTIC
SYMBOL PARAMETER
Thermal resistance1
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Junction to mounting base
per channel
both channels
-
-
2.4
1.2
3
1.5
K/W
K/W
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
Clamping voltages
Battery to ground
CONDITIONS
MIN. TYP. MAX. UNIT
VBG
VBL
VGL
IG = 1 mA
45
50
18
20
55
55
23
25
65
65
28
30
V
V
V
V
Battery to load per channel
Ground to load2
IL = IG = 1 mA
IL = 10 mA
IL = 10 A; tp = 300 µs
Supply voltage
Operating range3
battery to ground
-
VBG
5.5
-
35
V
Currents
Total quiescent current4
9 V ≤ VBG ≤ 35 V
VLG = 0 V
IB
IL
-
-
-
20
1
µA
µA
µA
µA
mA
mA
A
T
mb = 25˚C
mb = 25˚C
0.1
-
Off-state load current per
channel
VBL = VBG
-
10
1
T
-
0.1
1.8
3.6
-
IG
Operating current
one channel on
-
3
both channels on
VBL = 0.5 V; Tmb = 85˚C
-
6
IL
Nominal load current5
8
-
RG
Effective internal ground
resistance6
IG = -200 mA; tp = 300 µs
tp7
40
75
100
Ω
Resistances per channel
VBG
IL
Tj
RON
RON
On-state resistance
9 to 35 V 10 A 300 µs 25˚C
-
-
-
-
30
60
40
80
mΩ
mΩ
mΩ
mΩ
150˚C
On-state resistance
5.5 V
5 A
300 µs 25˚C
50
60
150˚C
100
120
1 Of the output Power MOS transistors.
2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
3 On-state resistance is increased if the supply voltage is less than 7 V.
4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5 Per channel but with both channels conducting. Defined as in ISO 10483-1.
6 Equivalent of the parallel connected resistors for both channels.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
September 2001
3
Rev 1.000
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Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
INPUT CHARACTERISTICS
5.5 V ≤ VBG ≤ 35 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
II
Input current
VIG = 5 V
20
5.5
-
60
7
160
8.5
3
µA
V
VIG
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
Input turn-on hysteresis
Input turn-on current
II = 200 µA
VIG(ON)
VIG(OFF)
∆VIG
II(ON)
II(OFF)
2.1
1.8
0.3
-
V
1.2
0.15
-
-
V
0.5
100
-
V
VIG = 3 V
µA
µA
Input turn-off current
VIG = 1.2 V
12
-
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load on either channel can be detected in the off-state. Refer to TRUTH TABLE.
This feature requires external load pull-up to a positive supply voltage via a suitable resistor.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25˚C.
SYMBOL PARAMETER
Open circuit detection
Load ground threshold voltage VBG ≥ 9 V
CONDITIONS
MIN. TYP. MAX. UNIT
VLG(OC)
IB(OC)
1.5
-
2.5
0.8
3.5
1.5
V
Supply quiescent current per
OC channel
VBG = VLG = 16 V
mA
open circuit detected,
other channel off
-IL(OC)
Load ground current per
channel
VLG = 16 V
VLG = 3.5 V
-
-
200
22
300
40
µA
µA
td(OC)
Status delay time
input low to status low
-
65
100
µs
Application information
Rext
External load pull-up resistance Vext = 5 V
per channel
-
10
-
kΩ
September 2001
4
Rev 1.000
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Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Undervoltage
VBG(UV)
Low supply threshold voltage1
2
4.2
0.5
5.3
1
V
V
∆VBG(UV)
Hysteresis
0.1
Overvoltage
VBG(OV)
High supply threshold voltage2
Hysteresis
35
40
1
45
2
V
V
∆VBG(OV)
0.4
IBG(OV)
Operating current per channel VBG > VBG(OV)
-
1
2
mA
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to TRUTH TABLE.
5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL PARAMETER
Overload protection
Load current limiting
CONDITIONS
MIN. TYP. MAX. UNIT
VBL = VBG; tp = 300 µs
IL(lim)
VBG ≥ 8 V
VBG = 5.5 V
18
15
30
27
42
42
A
A
Short circuit load protection Tmb ≤ 125˚C prior to overload3
PD(TO)
TDSC
Overload power threshold
Characteristic time
for latched protection4
100
-
150
200
200
500
W
which determines trip time5
µs
Overtemperature protection
Threshold junction temperature
Hysteresis6
Tj(TO)
150
3
170
10
190
20
˚C
˚C
∆Tj(TO)
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 SC protection for PD > PD(TO) is latched. Normal operation may only be resumed after the input is toggled low then high again.
Normal operation is maintained as long as PD < PD(TO) and Tj < Tj(TO)
.
5 Trip time td sc varies with overload dissipation PD according to the exponential model formula td sc ≈ TDSC / LN[ PD / PD(TO) ].
6 After cooling below the reset temperature the channel will resume normal operation.
September 2001
5
Rev 1.000
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Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VSG
Status clamping voltage
IS = 100 µA
IS = 100 µA
IS = 250 µA
VSG = 5 V
5.5
7
0.7
-
8.5
0.9
1.1
10
1
V
V
VSG(LO)
Status low voltage
-
-
-
-
V
IS
Status leakage current
-
µA
µA
Tmb = 25˚C
0.1
IS(SAT)
Status saturation current1
VSG = 5 V
5
-
10
47
15
-
mA
Application information
RS
External pull-up resistor
kΩ
TRUTH TABLE
ABNORMAL CONDITIONS
LOAD
OUTPUT STATUS
INPUT
DETECTED
DESCRIPTION
SUPPLY
LOAD 1
LOAD 2
1
L
2
L
UV OV OC SC OT OC SC OT
1
2
0
0
0
0
0
1
0
0
0
0
0
0
0
X
X
X
0
0
0
1
0
0
0
0
0
0
0
1
1
0
0
X
X
0
0
0
0
0
0
X
X
X
0
0
X
0
1
1
1
0
0
0
X
X
X
0
0
X
0
0
0
0
X
X
0
0
X
0
0
X
X
0
0
0
X
0
X
0
0
X
0
0
X
X
0
OFF OFF
OFF OFF
OFF ON
ON OFF
ON ON
OFF OFF
OFF OFF
H
L
both off & normal
L
L
both off, one/both OC or short to V+
one off & OC, other on & normal
one on & normal, other off & normal
both on & normal
L
H
L
L
H
H
H
H
H
H
H
H
H
H
0
H
H
H
H
L
H
X
X
X
L
0
0
X
0
X
0
supply undervoltage lockout
supply overvoltage shutdown
one SC tripped
X
X
X
1
X
X
0
OFF
X
OFF OFF
OFF ON
L
one SC tripped, other off & normal
one SC tripped, other on & normal
one OT shutdown
H
X
L
L
X
X
0
OFF
X
L
1
OFF OFF
OFF ON
L
one OT shutdown, other off & normal
one OT shutdown, other on & normal
H
1
L
KEY TO ABBREVIATIONS
L
H
X
0
logic low
logic high
don’t care
condition not present
condition present
UV undervoltage
OV overvoltage
OC open circuit
SC short circuit
OT overtemperature
1
1 For example with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
September 2001
6
Rev 1.000
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Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω per channel.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
During turn-on
from input going high
to 10% VL
td on
Delay time
-
30
1
-
µs
V/µs
dV/dton
Rate of rise of load voltage
30% to 70% VL
0.5
2
t on
Total switching time
to 90% VL
-
100
400
µs
During turn-off
from input going low
to 90% VL
td off
Delay time
-
0.5
-
20
1
-
2
µs
V/µs
µs
dV/dtoff
t off
Rate of fall of load voltage
Total switching time
70% to 30% VL
to 10% VL
40
200
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Csg
Status capacitance
per channel
VSG = 5 V
-
11
15
pF
Cig
Cbl
Input capacitance
Output capacitance
VBG = 13 V
VBL = 13 V
-
-
15
20
pF
pF
265
375
September 2001
7
Rev 1.000
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Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
MECHANICAL DATA
2
Plastic single-ended surface mounted package (Philips version of D -PAK);
7 leads (one lead cropped)
SOT427
A
A
E
1
D
1
mounting
base
D
H
D
4
L
p
1
7
b
c
e
e
e
e
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
A
A
L
H
Q
UNIT
b
c
D
E
e
1
p
D
1
max.
1.40
1.27
4.50
4.10
0.85
0.60
0.64
0.46
2.90 15.80 2.60
2.10 14.80 2.20
1.60 10.30
1.20 9.70
mm
11
1.27
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-06-25
01-04-18
SOT427
Fig.4. SOT427 surface mounting package1, centre pin connected to mounting base.
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
September 2001
8
Rev 1.000
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Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS1
PRODUCT
STATUS2
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
September 2001
9
Rev 1.000
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