Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
DESCRIPTION
QUICK REFERENCE DATA
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic surface mount
package.
SYMBOL
PARAMETER
MIN.
UNIT
IL
Nominal load current (ISO)
9
A
SYMBOL
PARAMETER
MAX.
UNIT
APPLICATIONS
VBG
IL
Continuous off-state supply voltage
Continuous load current
50
20
150
38
V
A
˚C
mΩ
General controller for driving
lamps, motors, solenoids, heaters.
Tj
Continuous junction temperature
RON
On-state resistance
Tj = 25˚C
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
BATT
STATUS
POWER
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
MOSFET
INPUT
CONTROL &
PROTECTION
CIRCUITS
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
LOAD
GROUND
RG
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
Ground
mb
B
I
2
Input
TOPFET
HSS
G
L
3
(connected to mb)
Status
S
3
4
1 2
4 5
5
Load
Fig. 2.
Fig. 3.
mb Battery
May 2001
1
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
Clamping voltages
Battery to ground
CONDITIONS
MIN. TYP. MAX. UNIT
VBG
VBL
IG = 1 mA
50
50
18
20
55
55
23
25
65
65
28
30
V
V
V
V
Battery to load
IL = IG = 1 mA
IL = 10 mA
-VLG
-VLG
Negative load to ground
Negative load voltage1
IL = 10 A; tp = 300 µs
Supply voltage
battery to ground
VBG
Operating range2
5.5
-
35
V
Currents
Quiescent current3
9 V ≤ VBG ≤ 16 V
VLG = 0 V
IB
IL
-
-
-
0.1
-
20
2
µA
µA
µA
µA
mA
A
Tmb = 25˚C
Tmb = 25˚C
Tmb = 85˚C
Off-state load current4
VBL = VBG
-
20
1
-
0.1
2
IG
IL
Operating current5
Nominal load current6
IL = 0 A
-
4
VBL = 0.5 V
9
-
-
Resistances
VBG
IL
tp7
Tmb
RON
RON
On-state resistance
9 to 35 V 10 A 300 µs
25˚C
150˚C
25˚C
-
-
-
-
28
-
38
70
48
88
mΩ
mΩ
mΩ
mΩ
On-state resistance
6 V
10 A 300 µs
36
-
150˚C
RG
Internal ground resistance
IG = 10 mA
95
150
190
Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
May 2001
3
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
INPUT CHARACTERISTICS
9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
II
Input current
VIG = 5 V
20
5.5
-
90
7
160
µA
V
VIG
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
Input turn-on hysteresis
Input turn-on current
II = 200 µA
8.5
VIG(ON)
VIG(OFF)
∆VIG
II(ON)
II(OFF)
2.4
2.1
0.3
-
3
V
1.5
-
-
V
-
100
-
V
VIG = 3 V
-
µA
µA
Input turn-off current
VIG = 1.5 V
10
-
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VSG
VSG
Status clamping voltage
IS = 100 µA
IS = 100 µA
5.5
7
-
8.5
1
V
V
V
Status low voltage
-
-
Tmb = 25˚C
Tmb = 25˚C
0.7
0.8
IS
IS
Status leakage current
VSG = 5 V
VSG = 5 V
-
-
-
0.1
7
15
1
µA
µA
mA
Status saturation current1
2
12
Application information
RS
External pull-up resistor
-
47
-
kΩ
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25 ˚C.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Open circuit detection
9 V ≤ VBG ≤ 35 V
IL(TO)
Low current detect threshold
Hysteresis
0.24
0.4
-
1.6
1.2
A
A
Tj = 25˚C
0.8
∆IL(TO)
-
0.16
-
A
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
May 2001
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Undervoltage
VBG(UV)
Low supply threshold voltage1
2
-
4.2
0.5
5.5
-
V
V
∆VBG(UV)
Hysteresis
Overvoltage
VBG(OV)
High supply threshold voltage2
Hysteresis
40
-
45
1
50
-
V
V
∆VBG(OV)
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED
LOAD
OUTPUT
OT
INPUT
SUPPLY
LOAD
STATUS
DESCRIPTION
UV
OV
X
0
LC
X
0
SC
X
0
L
X
0
0
1
0
0
0
X
0
0
X
0
X
1
OFF
ON
H
H
L
off
H
H
H
H
H
H
on & normal
0
1
0
ON
on & low current detect
supply undervoltage lockout
supply overvoltage shutdown
SC tripped
0
X
X
0
X
0
OFF
OFF
OFF
OFF
H
H
L
1
0
1
0
0
0
L
OT shutdown3
KEY TO ABBREVIATIONS
L
H
X
0
logic low
UV undervoltage
OV overvoltage
logic high
don’t care
condition not present
condition present
LC low current or open circuit load
SC short circuit
1
OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
May 2001
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Overload protection
VBL = VBG
IL(lim)
Load current limiting
VBG ≥ 9 V
34
45
64
A
Short circuit load protection
VBL(TO)
td sc
Battery load threshold voltage1
VBG = 16 V
VBG = 35 V
8
15
-
10
20
12
25
V
V
Response time2
VBL > VBL(TO)
180
250
µs
Overtemperature protection
Tj(TO)
Threshold junction
temperature3
150
-
170
10
190
-
˚C
˚C
∆Tj(TO)
Hysteresis
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
During turn-on
from input going high
to 10% VL
td on
Delay time
-
-
40
60
1
µs
V/µs
dV/dton
Rate of rise of load voltage
30% to 70% VL
0.35
t on
Total switching time
to 90% VL
-
140
200
µs
During turn-off
from input going low
to 90% VL
td off
Delay time
-
-
-
55
0.6
85
80
1
µs
V/µs
µs
dV/dtoff
t off
Rate of fall of load voltage
Total switching time
70% to 30% VL
to 10% VL
120
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.
SYMBOL PARAMETER
CONDITIONS
VBG = 13 V
VBL = 13 V
VSG = 5 V
MIN. TYP. MAX. UNIT
Cig
Cbl
Csg
Input capacitance
Output capacitance
Status capacitance
-
-
-
15
250
11
20
350
15
pF
pF
pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has
operated, the input voltage must be toggled low for the switch to resume normal operation.
2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
I
BG(ON) / mA
BUK215-50Y
CLAMPING
5
4
3
2
1
0
VBL
IL
UNDERVOLTAGE
SHUTDOWN
IB
II
B
OVERVOLTAGE
SHUTDOWN
I
TOPFET
HSS
VBG
L
IS
S
OPERATING VIG = 5 V
VLG
G
VSG
VIG
RS
IG
QUIESCENT VIG = 0 V
0
10
20
30
V
40
BG / V
50
60
70
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.7. Typical supply characteristics, 25 ˚C.
IG = f(VBG); parameter VIG
RON / mOhm
BUK215-50Y
R
ON / mOhm
BUK215-50Y
40
38
36
34
32
30
28
26
24
22
20
80
60
40
20
0
RON max
.
typ
VBG = 6 V
9 V =< VBG =< 35 V
-50
0
50
Tj
100
150
200
1
10
VBG / V
100
/
OC
Fig.5. Typical on-state resistance, tp = 300 µs.
ON = f(Tj); parameter VBG; condition IL = 10 A
Fig.8. Typical on-state resistance,Tj = 25 ˚C.
RON = f(VBG); condition IL = 10 A; tp = 300 µs
R
IL / A
BUK215-50Y
IG / mA
BUK215-50Y
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
lL = 0 A
VBG / V
> = 8
7
6
9 V <= VBG <= 35 V
5
lL > IL(TO)
typ.
VBG = 50 V
0
1
2
-50
0
50
100
150
200
Tj / O
C
VBL / V
Fig.6. Typical on-state characteristics, Tj = 25 ˚C.
Fig.9. Typical operating supply current.
IG = f(Tj); parameters IL, VBG; condition VIG = 5 V
IL = f(Tj); parameter VBG; tp = 250 µs
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
BUK215-50Y
max.
I
B / A
IL(OC) / A
BUK215-50Y
100E-6
10E-6
1E-6
1.6
1.2
0.8
0.4
0.0
typ.
100E-9
10E-9
1E-9
max.
typ.
min.
100E-12
-50
0
50
100
150
200
-50
0
50
100
150
200
Tj / O
C
Tj / O
C
Fig.10. Typical supply quiescent current.
IB = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V
Fig.13. Low load current detection threshold.
IL(OC) = f(Tj); conditions VIG = 5 V; VBG ≥ 9 V
BUK215-50Y
IL / A
BUK215-50Y
max.
V
BG(UV) / V
100E-6
10E-6
1E-6
5.5
4.5
3.5
2.5
typ.
typ.
100E-9
10E-9
1E-9
on
off
00E-12
10E-12
-50
0
50
100
150
200
-50
0
50
100
150
200
Tj / O
C
Tj / O
C
Fig.11. Typical off-state leakage current.
IL = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V.
Fig.14. Supply undervoltage thresholds.
VBG(UV) = f(Tj); conditions VIG = 5 V; VBL ≤ 2 V
VBG(OV) / V
BUK215-50Y
IS / A
BUK215-50Y
max.
55
50
45
40
35
100E-6
10E-6
1E-6
max.
on
typ.
100E-9
10E-9
1E-9
off
min.
-50
0
50
100
150
200
-50
0
50
100
150
200
Tj / O
C
Tj / O
C
Fig.12. Status leakage current.
IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V
Fig.15. Supply overvoltage thresholds.
VBG(OV) = f(Tj); conditions VIG = 5 V; IL = 100 mA
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
VSG(LOW) / V
IS / mA
BUK215-50Y
BUK215-50Y
8
6
4
2
0
1
0.5
0
0
1
2
3
4
5
-50
0
50
100
150
200
Tj / O
C
VSG / V
Fig.16. Typical status low characteristic.
VSG = f(Tj); conditions VBG ≥ 9 V, IS = 100 µA
Fig.19. Typical status low characteristic, Tj = 25 ˚C.
IS = f(VSG); conditions VIG = 5V, VBG = 13V,IL = 0A
VSG / V
BUK215-50Y
5
VIG / V
BUK215-50Y
7.50
7.40
7.30
7.20
7.10
7.00
6.90
6.80
6.70
6.60
6.50
3.00
2.50
2.00
1.50
1.00
VIG / V =
0
VIG(ON)
VIG(OFF)
-50
0
50
100
150
200
Tj / O
C
-50
0
50
100
150
200
Tj / O
C
Fig.17. Typical threshold voltage characteristic.
Fig.20. Typical status clamping voltage.
VSG = f(Tj); condition IS = 100µA, VBG = 13V
VIG = f(Tj); condition 9V ≤ VBG ≤ 16V
BUK215-50Y
IS / mA
VIG / V
BUK215-50Y
20
15
10
5
7.50
7.40
7.30
7.20
7.10
7.00
6.90
6.80
6.70
6.60
6.50
0
0
2
4
6
8
10
Tj / O
C
-50
0
50
100
150
200
VSG / V
Fig.18. Typical input clamping voltage.
VIG = f(Tj); condition II = 200µA, VBG = 13V
Fig.21. Typical status characteristic, Tj = 25 ˚C.
IS = f(VSG); conditions VIG = VBG = 0V
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
VLG / V
VBG / V
65
BUK215-50Y
BUK215-50Y
200 mA
-10
-15
-20
-25
-30
IG
=
60
55
50
1 mA
IL
=
10 mA
10 A
-50
0
50
100
150
200
-50
0
50
100
150
200
Tj / O
C
Tj / O
C
Fig.22. Typical battery to ground clamping voltage.
VBG = f(Tj); parameter IG
Fig.25. Typical negative load clamping voltage.
VLG = f(Tj); parameter IL; condition VIG = = 0V
VBL / V
IL / A
BUK215-50Y
BUK215-50Y
65
60
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IL
=
600 mA
1 mA
55
50
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
VBL / V
-50
0
50
100
150
200
Tj / O
C
Fig.23. Typical battery to load clamping voltage.
VBL = f(Tj); parameter IL; condition IG = 10mA
Fig.26. Typical reverse diode characteristic.
IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C
IL / A
IL / A
BUK215-50Y
BUK215-50Y
10
50
45
40
35
30
25
20
15
10
5
current limiting
VBL(TO) typ.
Short circuit trip = 150us
5
0
0
-30
-25
-20
-15
-10
0
2
4
6
8
10
12
14
16
18
20
VLG / V
VBL / V
Fig.24. Typical negative load clamping.
IL = f(VLG); conditions VIG = = 0V, Tj = 25˚C
Fig.27. Typical overload characteristic, Tmb = 25 ˚C.
IL = f(VBL); condition VBG = 16 V; parameter tp
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
IL(lim) / A
BUK215-50Y
V
/ V
BUK215-50Y
max.
BL(TO)
35
30
25
20
15
10
5
50
45
40
35
30
typ. 25˚C
min.
0
0
10
20
30
40
50
Tj / O
C
-50
0
50
100
150
200
V
BG
/ V
Fig.28. Short circuit load threshold voltage.
VBL(TO) = f(VBG); conditions -40˚C ≤ Tmb ≤ 150˚C
Fig.31. Typical overload current, VBL = 8V.
IL = f(Tj); parameter VBG = 13V;tp = 300 µs
CBL
BUK215-50Y
VBL(TO) / V
BUK215-50Y
10 nF
12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
1nF
100pF
-50
0
50
100
150
200
0
10
20
30
40
50
Tj / O
C
VBL / V
Fig.29. Typical output capacitance. Tmb = 25 ˚C
Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V
Fig.32. Typical short circuit load threshold voltage.
VBL(TO) = f(Tj); condition VBG = 16 V
BUK215-50Y
Zth j-mb ( K / W )
IG / mA
BUK215-50Y
1e+01
1e+00
1e-01
1e-02
1e-03
0
-50
D =
0.5
0.2
0.1
0.05
-100
-150
-200
0.02
t
T
p
tp
P
D =
D
0
t
T
-20
-15
-10
VBG / V
-5
0
1e-07
1e-05
1e-03
t / s
1e-01
1e+02
Fig.30. Typical reverse battery characteristic.
IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C
Fig.33. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
May 2001
11
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
MECHANICAL DATA
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 5 leads
(one lead cropped)
SOT426
A
A
E
1
D
1
mounting
base
D
H
D
3
L
p
1
2
4
5
b
c
e
e
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
A
A
L
H
Q
UNIT
b
c
D
E
e
1
p
D
1
max.
1.40
1.27
4.50
4.10
0.85
0.60
0.64
0.46
2.90 15.80 2.60
2.10 14.80 2.20
1.60
1.20
10.30
9.70
mm
11
1.70
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-12-14
99-06-25
SOT426
Fig.34. SOT426 surface mounting package1, centre pin connected to mounting base.
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS1
PRODUCT
STATUS2
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
May 2001
13
Rev 1.010
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