INTEGRATED CIRCUITS
DATA SHEET
TDA7050T
Low voltage mono/stereo power
amplifier
July 1994
Product specification
File under Integrated Circuits, IC01
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Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage
V
max.
max.
6 V
P
Peak output current
I
150 mA
OM
Total power dissipation
Storage temperature range
Crystal temperature
see derating curve Fig.1
T
T
−55 to + 150 °C
max.
stg
c
100 °C
A.C. and d.c. short-circuit duration
at V = 3,0 V (during mishandling)
t
max.
5 s
P
sc
MLB950
600
handbook, halfpage
P
tot
(mW)
400
200
0
50
0
50
100
T
150
( C)
o
amb
Fig.1 Power derating curve.
SO PACKAGE DESIGN EXAMPLE
To achieve the small dimension of the encapsulation the SO package is preferred with only 8 pins. Because a heatsink
is not applicable, the dissipation is limited by the thermal resistance of the 8-pin SO encapsulation until:
T
j max – Tamb
100 – 60
----------------------
160
=
= 0.25 W
---------------------------------
Rth j-a
July 1994
3
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Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
CHARACTERISTICS
V = 3 V; f = 1 kHz; R = 32 Ω; T
= 25 °C; unless otherwise specified
P
L
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply
Supply voltage
V
1,6
−
6,0
V
P
Total quiescent current
I
−
3,2
4
mA
tot
Bridge-tied load application (BTL); see Fig.4
*
Output power
V = 3,0 V; d = 10%
P
P
−
−
−
140
150
32
−
−
−
mW
mW
dB
P
tot
o
V = 4,5 V; d = 10% (R = 64 Ω)
P
tot
L
o
Voltage gain
G
v
Noise output voltage (r.m.s. value)
R = 5 kΩ; f = 1 kHz
V
−
−
−
1
140
tbf
−
−
40
−
−
70
−
−
µV
µV
mV
MΩ
nA
S
no(rms)
no(rms)
R = 0 Ω; f = 500 kHz; B = 5 kHz
V
S
D.C. output offset voltage (at R = 5 kΩ)
|∆V|
|Z |
S
Input impedance (at R = ∞)
S
i
Input bias current
I
−
i
Stereo application; see Fig.5
*
Output power
V = 3,0 V; d = 10%
P
−
−
35
75
26
−
−
mW
mW
dB
P
tot
o
V = 4,5 V; d = 10%
P
P
tot
o
Voltage gain
G
24.5
27.5
v
Noise output voltage (r.m.s. value)
R = 5 kΩ; f = 1 kHz
V
−
−
100
tbf
−
−
µV
µV
S
no(rms)
no(rms)
R = 0 Ω; f = 500 kHz; B = 5 kHz
V
S
Channel separation
R = 0 Ω; f = 1 kHz
α
|Z |
30
2
40
−
−
−
−
dB
MΩ
nA
S
Input impedance (at R = ∞)
S
i
Input bias current
I
−
20
i
*
Output power is measured directly at the output pins of the IC. It is shown as a function of the supply voltage in Fig.2
(BTL application) and Fig.3 (stereo application).
July 1994
4
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Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
Fig.2 Output power across the load impedance (R ) as a function of supply voltage (V ) in BTL application.
L
P
Measurements were made at f = 1 kHz; d = 10%; T
= 25 °C.
tot
amb
Fig.3 Output power across the load impedance (R ) as a function of supply voltage (V ) in stereo application.
L
P
Measurements were made at f = 1 kHz; d = 10%; T
= 25 °C.
tot
amb
July 1994
5
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Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
APPLICATION INFORMATION
Fig.4 Application diagram (BTL); also used as test circuit.
Fig.5 Application diagram (stereo); also used as test circuit.
6
July 1994
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Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
July 1994
7
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Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
July 1994
8
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Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
TDA7050T
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
July 1994
9
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