Philips Stereo Amplifier BGA6489 User Manual

DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BGA6489  
MMIC wideband medium power  
amplifier  
Product specification  
2003 Sep 18  
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Philips Semiconductors  
Product specification  
MMIC wideband medium power amplifier  
BGA6489  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134)  
SYMBOL  
VS  
PARAMETER  
DC supply voltage  
CONDITIONS  
RF input AC coupled  
MIN.  
MAX.  
UNIT  
6
V
IS  
DC supply current  
150  
800  
+150  
150  
15  
mA  
mW  
°C  
°C  
dBm  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
Ts 70 °C; note 1  
65  
operating junction temperature  
maximum drive power  
PD  
Note  
1. Ts is the temperature at the soldering point of pin 2.  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-s  
Note  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
thermal resistance from junction to solder point Ts 70 °C; note 1  
100  
K/W  
1. Ts is the temperature at the soldering point of pin 2.  
STATIC CHARACTERISTICS  
Tj = 25 °C; VS = 8 V; R1 = 39 Ω; unless otherwise specified.  
SYMBOL  
IS  
PARAMETER  
supply current  
CONDITIONS  
MIN.  
TYP.  
78  
MAX.  
UNIT  
70  
86  
mA  
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Philips Semiconductors  
Product specification  
MMIC wideband medium power amplifier  
BGA6489  
CHARACTERISTICS  
VS = 8 V; IS = 74 mA; Tamb = 25 °C; IP3(out) tone spacing = 1 MHz; PL = 0 dBm per tone (see Fig.2); R1 = 39 ;  
ZL = ZS = 50 Ω; unless otherwise specified.  
SYMBOL  
|s21|2  
PARAMETER  
CONDITIONS  
TYP.  
20  
UNIT  
dB  
insertion power gain  
f = 850 MHz  
f = 1.95 GHz  
f = 2.5 GHz  
f = 850 MHz  
f = 1.95 GHz  
f = 2.5 GHz  
f = 850 MHz  
f = 1.95 GHz  
f = 2.5 GHz  
f = 850 MHz  
f = 1.95 GHz  
f = 2.5 GHz  
f = 850 MHz  
f = 2.5 GHz  
16  
15  
14  
16  
19  
16  
12  
10  
3.1  
3.3  
3.4  
1.2  
1.3  
20  
17  
13  
12  
33  
27  
dB  
dB  
RL IN  
RL OUT  
NF  
return losses input  
return losses output  
noise figure  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
K
stability factor  
PL 1 dB  
IP3(in)  
IP3(out)  
load power  
at 1 dB gain compression; f = 850 MHz  
at 1 dB gain compression; f = 1.95 GHz  
f = 850 MHz  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
input intercept point  
output intercept point  
f = 2.5 GHz  
f = 850 MHz  
f = 2.5 GHz  
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Philips Semiconductors  
Product specification  
MMIC wideband medium power amplifier  
BGA6489  
APPLICATION INFORMATION  
Figure 2 shows a typical application circuit for the BGA6489 MMIC. The device is internally matched to 50 , and  
therefore does not require any external matching. The value of the input and output DC blocking capacitors C1 and C2  
depends on the operating frequency; see the tables below. Capacitors C1 and C2 are used in conjunction with L1 and  
C3 to fine tune the input and output impedance. For optimum supply decoupling, a 1 µF capacitor (C5) can be added.  
The external components should be placed as close as possible to the MMIC. When using via holes, use multiple via  
holes per pin in order to limit ground path induction. Resistor R1 is a bias resistor providing DC current stability with  
temperature.  
(2)  
R1  
V
S
(1)  
C3  
C4  
C5  
L1  
50  
microstrip  
50 Ω  
microstrip  
C1  
C2  
V
D
3
1
2
MGX419  
(1) Optional capacitor for optimum supply decoupling.  
(2) R1 values at operating supply voltage:  
VS = 6 V; R1 = 15 .  
VS = 9 V; R1 = 51 .  
VS = 11.5 V; R1 = 82 .  
Fig.2 Typical application circuit.  
Table 1 Component descriptions (see Fig.2)  
VALUE AT OPERATING FREQUENCY  
COMPONENT  
DESCRIPTION  
DIMENSIONS  
500  
MHz  
800  
MHz  
1950  
MHz  
2400  
MHz  
3500  
MHz  
C1, C2  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic or tantalum capacitor  
SMD inductor  
0603  
0603  
0603  
0603  
0603  
220 pF 100 pF 68 pF  
56 pF  
1 nF  
39 pF  
1 nF  
C3  
1 nF  
100 pF 68 pF  
1 µF 1 µF  
1 nF  
1 nF  
22 pF  
1 µF  
C4  
22 pF  
1 µF  
15 pF  
1 µF  
C5 (optional)  
L1  
68 nH 33 nH 22 nH 18 nH 15 nH  
R1  
SMD resistor 0.5 W; VS = 9 V  
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Philips Semiconductors  
Product specification  
MMIC wideband medium power amplifier  
BGA6489  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+1  
135°  
45°  
+0.5  
+2  
+0.2  
+5  
200 MHz  
0
0.2  
0.5  
2
5
10  
0°  
180°  
2.6 GHz  
5  
0.2  
2  
0.5  
135°  
45°  
1  
1.0  
90°  
MGX400  
IS = 74 mA; VS = 8 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.3 Input reflection coefficient (s11); typical values.  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+1  
135°  
45°  
+0.5  
+2  
+0.2  
+5  
2.6 GHz  
0
0.2  
0.5  
1
2
5
10  
0°  
180°  
200 MHz  
5  
0.2  
2  
0.5  
135°  
45°  
1  
1.0  
90°  
MGX401  
IS = 74 mA; VS = 8 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.4 Output reflection coefficient (s22); typical values.  
6
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Philips Semiconductors  
Product specification  
MMIC wideband medium power amplifier  
BGA6489  
MGX402  
MGX403  
0
25  
handbook, halfpage  
2
handbook, halfpage  
2
|s  
|
|s  
|
21  
(dB)  
12  
(dB)  
20  
15  
10  
5
10  
20  
30  
40  
0
0
500  
1000  
1500  
2000  
2500  
0
500  
1000  
1500  
2000  
2500  
f (MHz)  
f (MHz)  
IS = 74 mA; VS = 8 V; PD = 30 dBm; ZO = 50 Ω.  
IS = 74 mA; VS = 8 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.5 Isolation (|s12|2) as a function of frequency;  
typical values.  
Fig.6 Insertion gain (|s21|2) as a function of  
frequency; typical values.  
MGX404  
MGX405  
25  
40  
handbook, halfpage  
handbook, halfpage  
P
L1dB  
IP3  
(out)  
(dBm)  
20  
(dBm)  
30  
15  
10  
5
20  
10  
0
0
0
500  
1000  
1500  
2000  
2500  
0
500  
1000  
1500  
2000  
2500  
f (MHz)  
f (MHz)  
IS = 74 mA; VS = 8 V; ZO = 50 Ω.  
IS = 74 mA; VS = 8 V; PL = 0 dBm; ZO = 50 Ω.  
Fig.7 Load power as a function of frequency;  
typical values.  
Fig.8 Output intercept as a function of frequency;  
typical values.  
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Philips Semiconductors  
Product specification  
MMIC wideband medium power amplifier  
BGA6489  
MGX406  
MGX407  
5
5
handbook, halfpage  
handbook, halfpage  
NF  
(dB)  
4
K
4
3
2
1
3
2
1
0
0
0
0
500  
1000  
1500  
2000  
2500  
500  
1000  
1500  
2000  
2500  
f (MHz)  
f (MHz)  
IS = 74 mA; VS = 8 V; ZO = 50 Ω.  
IS = 74 mA; VS = 8 V; Z0 = 50 Ω.  
Fig.9 Noise figure as a function of frequency;  
typical values.  
Fig.10 Stability factor as a function of frequency;  
typical values.  
MGX408  
100  
handbook, halfpage  
I
s
(mA)  
90  
80  
70  
60  
40  
20  
0
20  
40  
60  
T (°C)  
80  
j
VS = 8 V; R1 = 39 Ω.  
Fig.11 Supply current as a function of operating  
junction temperature; typical values.  
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Scattering parameters  
VS = 8 V; IS = 74 mA; PD = 30 dBm; ZO = 50 ; Tamb = 25 °C  
s11  
s21  
s12  
MAGNITUDE  
s22  
MAGNITUDE  
f (MHz)  
K-FACTOR  
MAGNITUDE  
ANGLE  
(deg)  
MAGNITUDE  
ANGLE  
(deg)  
ANGLE  
(deg)  
ANGLE  
(deg)  
(ratio)  
0.06  
0.09  
0.11  
0.12  
0.14  
0.16  
0.17  
0.18  
0.19  
0.20  
0.21  
0.21  
0.22  
0.22  
0.22  
0.22  
0.21  
0.21  
0.20  
0.19  
0.18  
0.17  
0.16  
0.14  
0.13  
0.13  
0.12  
0.11  
0.11  
0.12  
(ratio)  
12.79  
12.59  
12.31  
11.97  
11.57  
11.18  
10.75  
10.24  
9.80  
9.40  
8.96  
8.53  
8.16  
7.85  
7.51  
7.16  
6.90  
6.69  
6.42  
6.16  
5.99  
5.83  
5.58  
5.39  
5.30  
5.18  
5.08  
4.71  
4.66  
4.45  
(ratio)  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.10  
(ratio)  
0.12  
0.13  
0.14  
0.14  
0.15  
0.16  
0.16  
0.17  
0.17  
0.17  
0.17  
0.17  
0.17  
0.17  
0.16  
0.16  
0.16  
0.16  
0.16  
0.17  
0.17  
0.19  
0.20  
0.22  
0.24  
0.28  
0.31  
0.28  
0.31  
0.33  
200  
300  
28.11  
27.41  
164.42  
156.85  
149.28  
141.88  
134.79  
127.97  
121.56  
115.06  
109.18  
103.40  
98.12  
92.76  
87.50  
82.76  
78.52  
74.16  
69.37  
65.14  
61.15  
56.80  
52.55  
49.08  
45.43  
40.67  
36.66  
33.88  
30.28  
22.43  
18.90  
18.63  
0.30  
0.39  
0.35  
0.32  
0.04  
22.91  
35.38  
46.54  
57.20  
61.41  
76.76  
85.75  
94.28  
102.4  
110.3  
118.5  
126.7  
134.8  
143.5  
152.7  
161.8  
171.9  
177.4  
1.1  
1.1  
1.1  
1.1  
1.1  
1.1  
1.2  
1.2  
1.2  
1.2  
1.2  
1.2  
1.2  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
1.3  
400  
21.64  
500  
15.28  
600  
8.01  
700  
0.34  
0.63  
800  
7.27  
1.57  
900  
14.78  
22.18  
29.33  
36.41  
42.47  
49.06  
55.46  
61.20  
67.02  
73.40  
78.99  
84.54  
91.32  
97.58  
103.60  
111.90  
120.80  
129.80  
143.80  
154.47  
164.40  
178.65  
160.01  
1.85  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
2100  
2200  
2300  
2400  
2500  
2600  
2700  
2800  
2900  
3000  
3100  
3.16  
4.29  
5.64  
7.03  
7.74  
9.08  
10.76  
11.89  
12.34  
13.16  
14.33  
14.84  
15.05  
15.72  
15.96  
15.27  
14.68  
15.64  
15.56  
11.60  
11.05  
10.63  
166.81  
156.07  
145.29  
135.65  
126.23  
117.62  
110.35  
104.05  
97.10  
91.75  
84.80  
80.37  
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Philips Semiconductors  
Product specification  
MMIC wideband medium power amplifier  
BGA6489  
PACKAGE OUTLINE  
Plastic surface mounted package; collector pad for good heat transfer; 3 leads  
SOT89  
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
L
min.  
UNIT  
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6  
1.4  
0.48  
0.35  
0.53  
0.40  
1.8  
1.4  
0.44  
0.37  
4.6  
4.4  
2.6  
2.4  
4.25  
3.75  
mm  
3.0  
1.5  
0.8  
0.13  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
97-02-28  
99-09-13  
SOT89  
TO-243  
SC-62  
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Philips Semiconductors  
Product specification  
MMIC wideband medium power amplifier  
BGA6489  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
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Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: [email protected].  
© Koninklijke Philips Electronics N.V. 2003  
SCA75  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R77/01/pp12  
Date of release: 2003 Sep 18  
Document order number: 9397 750 11767  
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