This product complies with the RoHS Directive (EU 2002/95/EC).
Fast Recovery Diodes (FRD)
MA2DF62
Silicon Mesa type
For high frequency rectification
Features
Package
Super high speed switching characteristic: trr = 15 ns (typ.)
Code
TO-220D-B1
Low noise type
Pin Name
1: Cathode
2:Anode
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VRRM
VRSM
IF(AV)
IFSM
Rating
600
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Marking Symbol: MA2DF62
600
V
1
Forward current (Average) *
10
A
2
Non-repetitive peak forward surge current *
40
A
Junction temperature
Storage temperature
Tj
150
°C
°C
T
stg
-40 to +150
Note) 1: T = 25°C
*
C
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
*
Electrical Characteristics Ta = 25°C±3°C
Parameter
Forward voltage
Symbol
VF
Conditions
Min
Typ
Max
2.5
Unit
V
IF = 10A
1.8
Reverse current
IRRM
VRRM = 600 V
30
mA
IF = 0.5A, IR = 1.0A
Irr = 0.25A
Reverse recovery time *
trr
15
25
3.0
63
ns
Thermal resistance (j-c)
Thermal resistance (j-a)
Rth(j-c)
°C/W
°C/W
Rth(j-a)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. : t measurement circuit
*
rr
50 Ω
50 Ω
trr
D.U.T.
IF
0.25 × IR
5.5 Ω
IR
Publication date: December 2008
SKJ00024AED
1
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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