This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1149
Silicon NPN epitaxial planar type
For low-frequency amplification
Unit: mm
+0.10
–0.05
0.40
3
+0.10
–0.06
0.16
■ Features
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1
2
(0.95) (0.95)
1.9 0.1
+0.20
2.90
–0.05
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
100
1 : Base
2 : Emitter
3 : Collector
100
V
15
20
V
EIAJ : SC-59
Mini3-G1 Package
mA
mA
mW
°C
Peak collector current
ICP
50
Marking symbo：l 1V
Collector power dissipation
Junction temperature
PC
200
Tj
150
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
100
100
15
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
V
IE = 10 µA, IC = 0
VCB = 60 V, IE = 0
VCE = 60 V, IB = 0
VCE = 10 V, IC = 2 mA
V
0.1
1.0
µA
µA
ICEO
hFE
400
1200
0.20
VCE(sat) IC = 10 mA, IB = 1 mA
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
0.05
100
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
hFE
400 to 800
600 to 1 200
Publication date: January 2003
SJC00208BED
1
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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