Transistor
2SC5378
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
2.1±0.1
Features
Low noise figure NF.
025
1.25±0.1
0.425
■
●
●
High gain.
●
High transition frequency fT.
3
●
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEO
IC
Rating
U
V
0.2±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
V
1:Base
2:Emitter
3:Collector
2
80
V
EIAJ:SC–70
S–Mini Type Package
mA
mW
˚C
Collector power dissipation
Junction temperature
Storage temperature
C
150
Marking symbol : HT
Tj
150
tg
–55 ~
C
Elecricl Chcteristics (Ta=5˚C)
■
Parameter
ymol
ICBO
IEBO
Conditns
min
typ
max
1
Unit
µA
Colector cuf current
Emittecutoff c
Forward curren
Collector output ca
Transition frequency
Noise figure
VCB = 10V, IE = 0
VEB = 1V, IC = 0
CE = 5V, IC = 10mA
1
µA
*1
hFE
Cob
fT
V
80
200
1
VCB = 5V, IE = 0, f = 1MHz
0.6
7
pF
GHz
dB
VCE = 5V, IC = 10mA, f = 2GHz
VCE = 5V, IC = 3mA, f = 1GHz
VCE = 5V, IC = 10mA, f = 1GHz
NF
| S21e
1.6
11
2
2
Foward transfer gain
|
8.5
dB
*1
h
Rank classification
FE
Rank
hFE
Q
R
S
80 ~ 115
95 ~ 155
135 ~ 200
1
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