This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3312
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1310
Unit: mm
4.0 0.2
2.0 0.2
■ Features
0.75 max.
• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low noise voltage NV
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
+0.20
0.45
–0.10
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
60
+0.20
0.45
–0.10
(2.5) (2.5)
55
V
0.7 0.1
7
100
V
1: Emitter
2: Collector
3: Base
Collector current
IC
ICP
PC
Tj
mA
mA
mW
°C
1
2
3
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
200
NS-B1 Package
300
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
VBE
Conditions
Min
60
55
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
VCE = 1 V, IC = 30 mA
VCB = 20 V, IE = 0
VCE = 20 V, IB = 0
VCE = 5 V, IC = 2 mA
V
1
V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
ICBO
0.1
1
µA
µA
ICEO
hFE
180
700
1
VCE(sat) IC = 100 mA, IB = 10 mA
V
fT
VCB = 5 V, IE = −2 mA, f = 200 MHz
200
MHz
mV
Noise voltage
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB
150
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
Publication date: March 2003
SJC00128BED
1
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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