This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1532G
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930G
■ Features
• High transition frequency fT
■ Package
• Code
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
SMini3-F2
• Marking Symbol: E
• Pin Name
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
−30
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
−20
V
−5
V
−30
mA
mW
°C
°C
Collector power dissipation
Junction temperature
PC
150
Tj
150
Storage temperature
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VBE
Conditions
VCE = −10 µA, IC = −1 mA
VCB = −10 V, IE = 0
Min
Typ
Max
Unit
V
Base-emitter saturation voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
− 0.7
ICBO
ICEO
− 0.1
−100
−10
µA
µA
µA
VCE = −20 V, IB = 0
IEBO
VEB = −5 V, IC = 0
hFE
VCE = −10 V, IC = 1 mA
70
220
VCE(sat) IC = −10 mA, IB = −1 mA
− 0.1
300
2.8
V
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
150
MHz
dB
Ω
Noise figure
NF
Zrb
Cre
VCB = −10 V, IE = 1 mA, f = 5 MHz
VCB = −10 V, IE = 1 mA, f = 2 MHz
VCB = −10 V, IE = 1 mA, f = 10.7 MHz
4.0
60
Reverse transfer impedance
22
Common-emitter reverse transfer capacitance
1.2
2.0
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
B
C
hFE
70 to 140
110 to 220
Publication date: July 2007
SJC00346BED
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1
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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