This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1309A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3311A
Unit: mm
4.0 0.2
2.0 0.2
0.75 max.
■ Features
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
• Optimum for high-density mounting
■ Absolute Maximum Ratings Ta = 25°C
+0.20
0.45
–0.10
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
−60
Unit
V
+0.20
0.45
–0.10
(2.5) (2.5)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
0.7 0.1
−50
V
1: Emitter
2: Collector
3: Base
−7
V
1
2
3
−100
−200
300
mA
mA
mW
°C
NS-B1 Package
Peak collector current
ICP
Collector power dissipation
Junction temperature
PC
Tj
150
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−60
−50
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
−100
nA
µA
ICEO
−1
460
hFE
160
VCE(sat) IC = −50 mA, IB = −5 mA
− 0.3
V
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
pF
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
3.5
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
No rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
Publication date: March 2003
SJC00016BED
1
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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