This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1018
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
5.0 0.2
4.0 0.2
Complementary to 2SC1473
■ Features
• High collector-emitter voltage (Base open) VCEO
0.7 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
−250
Unit
V
+0.15
+0.15
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
0.45
0.45
–0.1
–0.1
+0.6
+0.6
2.5
–0.2
2.5
–0.2
−200
V
−5
V
1
2
3
−70
mA
mA
mW
°C
1 : Emitter
2 : Collector
3 : Base
Peak collector current
ICP
−100
Collector power dissipation
Junction temperature
PC
750
TO-92-B1 Package
Tj
150
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCEO
VEBO
ICEO
Conditions
Min
−200
−5
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −100 µA, IB = 0
IE = −1 µA, IC = 0
V
VCE = −120 V, IB = 0
VCE = −10 V, IC = −5 mA
−1
µA
hFE
60
50
220
−1.5
VCE(sat) IC = −50 mA, IB = −5 mA
V
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
MHz
pF
Collector output capacitance
Cob
VCB = −10 V, IE =0, f = 1 MHz
10
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
hFE
60 to 150
100 to 220
Publication date: January 2003
SJC00008BED
1
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