CY62167DV18 MoBL®
16-Mbit (1M x 16) Static RAM
consumption by more than 99% when deselected (CE HIGH
Features
1
or CE LOW or both BHE and BLE are HIGH). The input and
2
• Very high speed: 55 ns
output pins (IO through IO ) are placed in a high impedance
state when:
0
15
• Wide voltage range: 1.65V–1.95V
• Ultra low active power
• Deselected (CE HIGH or CE LOW)
1
2
• Outputs are disabled (OE HIGH)
— Typical active current: 1.5 mA @ f = 1 MHz
• Both Byte High Enable (BHE) and Byte Low Enable (BLE)
are disabled (BHE, BLE HIGH)
— Typical active current: 15 mA @ f = f
• Ultra low standby power
max
• Write operation is active (CE LOW, CE HIGH and WE
1
2
• Easy memory expansion with CE , CE , and OE features
LOW)
1
2
• Automatic power down when deselected
• CMOS for optimum speed and power
• Available in Pb-free 48-ball VFBGA package
To write to the device, take Chip Enables (CE LOW and CE
1
2
HIGH) and Write Enable (WE) input LOW. If BLE is LOW, then
data from IO pins (IO through IO ) is written into the location
0
7
specified on the address pins (A through A ). If BHE is LOW
0
19
Functional Description[1]
8
15
then data from IO pins (IO through IO ) is written into the
location specified on the address pins (A through A ).
0
19
The CY62167DV18 is a high performance CMOS static RAM
organized as 1M words by 16 bits. This device features
advanced circuit design to provide ultra low active current.
To read from the device, take Chip Enables (CE LOW and
1
CE HIGH) and OE LOW while forcing the WE HIGH. If BLE
2
is LOW, then data from the memory location specified by the
®
This is ideal for providing More Battery Life™ (MoBL ) in
address pins appear on IO to IO . If BHE is LOW, then data
0
7
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption by 99% when addresses are not
toggling. Placing the device into standby mode reduces power
8
15
page 9 for a complete description of read and write modes.
Logic Block Diagram
DATA IN DRIVERS
A
A
A
A
A
A
A
A
A
A
A
10
9
8
7
6
1M × 16
RAM Array
5
4
3
2
1
0
IO –IO
0
7
IO –IO
8
15
COLUMN DECODER
BYTE
BHE
WE
CE2
CE1
OE
PowerDown
Circuit
BLE
CE2
CE1
BHE
BLE
Note
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05326 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 25, 2007
CY62167DV18 MoBL®
DC Input Voltage
........................–0.2V to V
+ 0.2V
Maximum Ratings
CCmax
Output Current into Outputs (LOW)............................. 20 mA
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Storage Temperature .................................–65°C to +150°C
Latch up Current.....................................................> 200 mA
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Operating Range
Supply Voltage to Ground Potential. –0.2V to V
+ 0.2V
CCmax
Ambient
V
CC
Range
DC Voltage Applied to Outputs
Temperature
in High-Z State
........................... –0.2V to V
+ 0.2V
CCmax
Industrial
–40°C to +85°C
1.65V to 1.95V
DC Electrical Characteristics (Over the Operating Range)
55 ns
Parameter
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
= −0.1 mA
Min
Typ
Max
Unit
V
I
I
1.4
V
V
OH
OH
OL
V
V
V
I
= 0.1 mA
0.2
OL
IH
IL
1.4
–0.2
–1
V
+ 0.2
V
CC
Input LOW Voltage
0.4
+1
+1
30
5
V
Input Leakage Current
Output Leakage Current
GND < V < V
CC
µA
µA
mA
IX
I
I
GND < V < V , Output Disabled
–1
OZ
O
CC
I
V
Operating Supply Current
f = f
= 1/t
V
= 1.95V, I = 0 mA,
OUT
15
1.5
2.5
CC
CC
MAX
RC
CC
CMOS level
f = 1 MHz
I
Automatic CE Power down
Current − CMOS Inputs
CE > V − 0.2V, CE < 0.2V,
20
µA
SB1
1
CC
2
V
> V − 0.2V, V < 0.2V,
IN
CC IN
f = f
(Address and Data Only),
MAX
f = 0 (OE, WE, BHE and BLE)
I
Automatic CE Power down
Current − CMOS Inputs
CE > V − 0.2V, CE < 0.2V,
2.5
20
µA
SB2
1
CC
2
V
> V − 0.2V or V < 0.2V,
IN
CC IN
f = 0, V =1.95V
CC
Capacitance [7]
Parameter
Description
Input Capacitance
Test Conditions
T = 25°C, f = 1 MHz, V = V
CC(typ)
Max
6
Unit
C
C
pF
pF
IN
A
CC
Output Capacitance
8
OUT
Notes
4.
5.
V
V
= –2.0V for pulse durations less than 20 ns.
IL(min)
= V + 0.75V for pulse durations less than 20 ns.
IH(max)
CC
6. Full device AC operation requires linear V ramp from 0 to V
7. Tested initially and after any design or process changes that may affect these parameters.
and V must be stable at V for 500 µs.
CC(min)
CC
CC(min)
CC
Document #: 38-05326 Rev. *C
Page 3 of 11
CY62167DV18 MoBL®
Thermal Resistance [7]
Parameter
Description
Test Conditions
VFBGA
Unit
Θ
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
55
°C/W
JA
Θ
Thermal Resistance
(Junction to Case)
16
°C/W
JC
AC Test Loads and Waveforms
R1
ALL INPUT PULSES
90%
10%
V
CC
V
CC
OUTPUT
90%
10%
Rise Time = 1 V/ns
GND
R2
30 pF
Fall Time = 1 V/ns
INCLUDING
JIG AND
SCOPE
Equivalent to:
OUTPUT
THEVENIN EQUIVALENT
R
TH
V
Parameters
1.8V
13500
10800
6000
0.80
Unit
Ω
R1
R2
Ω
R
Ω
TH
TH
V
V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min Typ
Max Unit
V
V
for Data Retention
1.0
1.95
10
V
DR
CC
V
V
= 1.0V,
CE > V – 0.2V, CE < 0.2V,
I
Data Retention Current
µA
CC
CCDR
1
CC
2
> V – 0.2V or V < 0.2V
IN
CC
IN
t
t
Chip Deselect to Data Retention Time
Operation Recovery Time
0
ns
ns
CDR
R
t
RC
Data Retention Waveform[9]
DATA RETENTION MODE
V
, min
V
> 1.0V
V
V
, min
CC
CC
CC
DR
t
t
CDR
R
CE or
1
BHE,BLE
or
CE
2
Notes
8. Full device operation requires linear V ramp from V to V
9. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.
> 100 µs or stable at V > 100 µs.
CC(min)
CC
DR
CC(min)
Document #: 38-05326 Rev. *C
Page 4 of 11
CY62167DV18 MoBL®
Switching Characteristics (Over the Operating Range)
55 ns
Parameter
Read Cycle
Description
Unit
Min
55
Max
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Read Cycle Time
ns
RC
Address to Data Valid
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AA
Data Hold from Address Change
CE LOW and CE HIGH to Data Valid
10
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
55
25
1
2
OE LOW to Data Valid
OE LOW to LOW Z
5
10
0
OE HIGH to High Z
CE LOW and CE HIGH to Low Z
20
20
1
2
CE HIGH and CE LOW to High Z
1
2
CE LOW and CE HIGH to Power up
1
2
CE HIGH and CE LOW to Power down
55
55
PD
1
2
BLE/BHE LOW to Data Valid
DBE
LZBE
HZBE
BLE/BHE LOW to Low Z
5
BLE/BHE HIGH to HIGH Z
20
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle Time
55
40
40
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
CE LOW and CE HIGH to Write End
SCE
AW
1
2
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
HA
0
SA
40
45
25
0
PWE
BW
BLE/BHE LOW to Write End
Data Setup to Write End
Data Hold from Write End
SD
HD
WE LOW to High-
20
HZWE
LZWE
WE HIGH to Low-Z
10
Notes
10. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of V
/2, input pulse levels
CC(typ)
of 0 to V
CC(typ)
OL OH
11. At any given temperature and voltage condition, t
is less than t
, t
is less than t
, t
is less than t
, and t
is less than t
for any
HZCE
LZCE HZBE
LZBE HZOE
LZOE
HZWE
LZWE
given device.
12. t
, t
, t
, and t
transitions are measured when the outputs enter a high impedance state.
HZOE HZCE HZBE
HZWE
13. The internal write time of the memory is defined by the overlap of WE, CE = V , BHE, BLE or both = V , and CE = V . All signals must be ACTIVE to initiate
1
IL
IL
2
IH
a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.
Document #: 38-05326 Rev. *C
Page 5 of 11
CY62167DV18 MoBL®
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle 2 (OE Controlled)
ADDRESS
tRC
CE1
CE2
tPD
t
HZCE
tACE
BHE/BLE
OE
tDBE
tHZBE
tLZBE
tHZOE
tDOE
tLZOE
HIGH
IMPEDANCE
HIGH IMPEDANCE
DATA OUT
VCC
SUPPLY
CURRENT
DATA VALID
tLZCE
ICC
ISB
tPU
50%
50%
Notes
14. The device is continuously selected. OE, CE = V , BHE and/or BLE = V , and CE = V .
IH
1
IL
IL
2
15. WE is HIGH for read cycle.
16. Address valid before or similar to CE , BHE, BLE transition LOW and CE transition HIGH.
1
2
Document #: 38-05326 Rev. *C
Page 6 of 11
CY62167DV18 MoBL®
Switching Waveforms (continued)
Write Cycle 1 (WE Controlled)
tWC
ADDRESS
CE1
tSCE
CE2
tAW
tHA
tSA
tPWE
WE
tBW
BHE/BLE
OE
tHD
tSD
DATA IO
NOTE 19
VALID DATA
tHZOE
Write Cycle 2 (CE or CE Controlled)
1
2
tWC
ADDRESS
CE1
tSCE
CE2
tSA
tAW
tHA
tPWE
WE
tBW
BHE/BLE
OE
tHD
tSD
DATA IO
VALID DATA
tHZOE
Notes
17. Data IO is high impedance if OE = V
.
IH
18. If CE goes HIGH and CE goes LOW simultaneously with WE = V , the output remains in a high impedance state.
1
2
IH
19. During this period, the IOs are in output state. Do not apply input signals.
Document #: 38-05326 Rev. *C
Page 7 of 11
CY62167DV18 MoBL®
Switching Waveforms (continued)
Write Cycle 3 (WE Controlled, OE LOW)
tWC
ADDRESS
CE1
tSCE
CE2
tBW
BHE/BLE
tAW
tHA
tSA
tPWE
WE
tSD
tHD
DATA IO
VALID DATA
tLZWE
t
HZWE
Write Cycle 4 (BHE/BLE Controlled, OE LOW)
tWC
ADDRESS
CE1
CE2
tSCE
tAW
tHA
tBW
BHE/BLE
tSA
tPWE
WE
tSD
tHD
NOTE 19
DATA IO
VALID DATA
Document #: 38-05326 Rev. *C
Page 8 of 11
CY62167DV18 MoBL®
Truth Table
CE
H
X
CE
WE
X
OE
X
BHE
X
BLE
X
Inputs/Outputs
High Z
Mode
Deselect/Power Down
Deselect/Power Down
Deselect/Power Down
Read
Power
Standby (I
Standby (I
Standby (I
1
2
X
)
SB
L
X
X
X
X
High Z
High Z
)
SB
X
X
X
X
H
H
)
SB
L
H
H
H
L
L
L
Data Out (IO –IO
)
Active (I
Active (I
)
CC
0
15
L
H
L
H
L
High Z (IO –IO );
Read
)
CC
8
15
Data Out (IO –IO )
0
7
L
H
H
L
L
H
Data Out (IO –IO );
Read
Active (I
)
CC
8
15
High Z (IO –IO )
0
7
L
L
H
H
L
L
X
X
L
L
L
Data In (IO –IO
)
Write
Write
Active (I
Active (I
)
CC
0
15
H
High Z (IO –IO );
)
CC
8
15
Data In (IO –IO )
0
7
L
H
L
X
L
H
Data In (IO –IO );
Write
Active (I
)
CC
8
15
High Z (IO –IO )
0
7
L
L
L
H
H
H
H
H
H
H
H
H
L
H
L
H
L
L
High Z
High Z
High Z
Output Disabled
Output Disabled
Output Disabled
Active (I
Active (I
Active (I
)
CC
)
CC
)
CC
Ordering Information
Speed
(ns)
Package
Diagram
Operating
Range
Ordering Code
Package Type
55
CY62167DV18LL-55BVXI 51-85178 48-ball Fine Pitch BGA (8 x 9.5 x 1 mm) (Pb-free)
Industrial
Document #: 38-05326 Rev. *C
Page 9 of 11
CY62167DV18 MoBL®
Package Diagrams
Figure 1. 48-Ball VFBGA (8 x 9.5 x 1 mm), 51-85178
BOTTOM VIEW
A1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 M C A B
Ø0.30 0.05(48X)
A1 CORNER
1
2
3
4
5
6
6
5
4
3
2
1
A
A
B
C
D
B
C
D
E
E
F
F
G
G
H
H
1.875
A
A
0.75
B
8.00 0.10
3.75
B
8.00 0.10
0.15(4X)
SEATING PLANE
C
51-85178-**
MoBL is a registered trademark, and More Battery Life is a trademark of Cypress Semiconductor. All product and company names
mentioned in this document are the trademarks of their respective holders.
Document #: 38-05326 Rev. *C
Page 10 of 11
© Cypress Semiconductor Corporation, 2002-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the
use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to
be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY62167DV18 MoBL®
Document History Page
®
Document Title: CY62167DV18 MoBL , 16-Mbit (1M x 16) Static RAM
Document Number: 38-05326
Orig. of
Change
REV.
ECN NO. Issue Date
Description of Change
**
118406
123690
09/30/02
02/11/03
GUG
New Data Sheet
*A
DPM
Changed Advance to Preliminary
Added package diagram
*B
*C
126554
04/25/03
DPM
VKN
Minor Change: Changed sunset owner from DPM to HRT
1015643 See ECN
Converted from preliminary to final
Removed “L” parts
Removed 70 ns speed bin
Updated footnote #3
Updated Ordering Information table
Document #: 38-05326 Rev. *C
Page 11 of 11
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