This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1218A
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
Complementary to 2SD1819A
+0.10
+0.1
–0.0
0.15
0.3
–0.05
3
■ Features
• High forward current transfer ratio hFE
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.2
■ Absolute Maximum Ratings Ta = 25°C
10°
Parameter
Symbol
Rating
−45
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
1: Base
2: Emitter
3: Collector
−45
V
−7
V
EIAJ: SC-70
SMini3-G1 Package
Collector current
IC
ICP
PC
Tj
−100
−200
150
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Marking Symbol: B
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−45
−45
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
− 0.1
µA
µA
ICEO
−100
hFE
160
460
VCE(sat) IC = −100 mA, IB = −10 mA
− 0.3 − 0.5
V
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
80
MHz
pF
Collector output capacitance
Cob
2.7
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
210 to 340
BR
S
290 to 460
BS
No-rank
160 to 460
B
hFE
160 to 260
BQ
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
SJC00071BED
1
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1218A
NF IE
NF IE
h Parameter IE
6
5
4
3
2
1
20
VCB = −5 V
VCE = −5 V
f = 270 Hz
Ta = 25°C
VCB = −5 V
Rg = 50 kΩ
f = 1 kHz
Ta = 25°C
Rg = 2 kΩ
Ta = 25°C
hfe
16
12
8
100
10
1
hoe (µS)
f = 100 Hz
1 kHz
10 kHz
hie (kΩ)
4
hre (× 10−4
)
0
0.01
0
0.1
0.1
1
10
1
10
0.1
1
10
(
)
Emitter current IE mA
(
)
(
)
Emitter current IE mA
Emitter current IE mA
h Parameter VCE
hfe
100
hoe (µS)
10
hre (× 10−4
)
hie (kΩ) IE = 2 mA
f = 270 Hz
Ta = 25°C
1
−1
−10
−100
(
)
V
Collector-emitter voltage VCE
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3
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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